LEADER 04275 am 22006013u 450 001 9910311932903321 005 20200218231950.0 010 $a1-351-83107-0 010 $a1-315-21518-7 010 $a1-4822-4067-X 024 7 $a10.1201/b19117 035 $a(CKB)3710000000478374 035 $a(EBL)4003170 035 $a(SSID)ssj0001588901 035 $a(PQKBManifestationID)16275635 035 $a(PQKBTitleCode)TC0001588901 035 $a(PQKBWorkID)14872151 035 $a(PQKB)11787891 035 $a(MiAaPQ)EBC4003170 035 $a(CaSebORM)9781482240672 035 $a(OCoLC)922791264 035 $a(ScCtBLL)b5ae4b3d-8ff4-4044-8e03-3a10ea800db1 035 $a(EXLCZ)993710000000478374 100 $a20180331h20162016 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aCompact models for integrated circuit design $econventional transistors and beyond /$fSamar K. Saha 205 $a1st edition 210 1$aBoca Raton :$cCRC Press,$d[2016] 210 4$dİ2016 215 $a1 online resource (537 p.) 300 $aDescription based upon print version of record. 311 $a1-138-82740-1 311 $a1-4822-4066-1 320 $aIncludes bibliographical references and index. 327 $a1. Introduction to compact models -- 2. Review of basic device physics -- 3. Metal-oxide-semiconductor system -- 4. Large geometry MOSFET compact models -- 5. Compact models for small geometry MOSFETs -- 6. MOSFET capacitance models -- 7. Compact MOSFET models for RF applications -- 8. Modeling process variability in scaled MOSFETs -- 9. Compact models for ultrathin body FETs -- 10. Beyond-CMOS transistor models : tunnel FETs -- 11. Bipolar junction transistor compact models -- 12. Compact model library for circuit simulation. 330 $aCompact Models for Integrated Circuit Design: Conventional Transistors and Beyond provides a modern treatise on compact models for circuit computer-aided design (CAD). Written by an author with more than 25 years of industry experience in semiconductor processes, devices, and circuit CAD, and more than 10 years of academic experience in teaching compact modeling courses, this first-of-its-kind book on compact SPICE models for very-large-scale-integrated (VLSI) chip design offers a balanced presentation of compact modeling crucial for addressing current modeling challenges and understanding new models for emerging devices. Starting from basic semiconductor physics and covering state-of-the-art device regimes from conventional micron to nanometer, this text: Presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models Discusses the major issue of process variability, which severely impacts device and circuit performance in advanced technologies and requires statistical compact models Promotes further research of the evolution and development of compact models for VLSI circuit design and analysis Supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices Includes exercise problems at the end of each chapter and extensive references at the end of the book Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond is intended for senior undergraduate and graduate courses in electrical and electronics engineering as well as for researchers and practitioners working in the area of electron devices. However, even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts from this book. 606 $aIntegrated circuits$xMathematical models 606 $aIntegrated circuits$xComputer-aided design 608 $aElectronic books. 615 0$aIntegrated circuits$xMathematical models. 615 0$aIntegrated circuits$xComputer-aided design. 676 $a621.3/815 700 $aSaha$b Samar K.$0932843 801 0$bFlBoTFG 801 1$bFlBoTFG 906 $aBOOK 912 $a9910311932903321 996 $aCompact models for integrated circuit design$92099635 997 $aUNINA