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010   $a981-13-3444-7
024 7 $a10.1007/978-981-13-3444-3
035   $a(CKB)4100000007181152
035   $a(MiAaPQ)EBC5609379
035   $a(DE-He213)978-981-13-3444-3
035   $a(EXLCZ)994100000007181152
100   $a20181129d2018      u|             0
101 0 $aeng
135   $aurcnu||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aElectrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors$b[electronic resource] /$fby Mengqi Fu
210  1$aSingapore :$cSpringer Singapore :$cImprint: Springer,$d2018.
215   $a1 online resource (113 pages)
225 1 $aSpringer Theses, Recognizing Outstanding Ph.D. Research,$x2190-5053
311   $a981-13-3443-9 
327   $aIntroduction -- Preparation, characterization and parameter extraction of InAs nanowire-based devices -- Size effect on the electrical properties of InAs nanowires -- Crystal phase- and orientation-dependent electrical properties of InAs nanowires -- Influence of growth methods on the electrical properties of InAs nanowires -- Summary.
330   $aThis book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performance of the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.
410  0$aSpringer Theses, Recognizing Outstanding Ph.D. Research,$x2190-5053
606   $aEngineering
606   $aSurfaces (Physics)
606   $aOptical materials
606   $aNanoscale Science and Technology$3http://scigraph.springernature.com/things/product-market-codes/P25140
606   $aNanotechnology and Microengineering$3http://scigraph.springernature.com/things/product-market-codes/T18000
606   $aSemiconductors$3http://scigraph.springernature.com/things/product-market-codes/P25150
606   $aCharacterization and Evaluation of Materials$3http://scigraph.springernature.com/things/product-market-codes/Z17000
606   $aElectronic Circuits and Devices$3http://scigraph.springernature.com/things/product-market-codes/P31010
606   $aOptical and Electronic Materials$3http://scigraph.springernature.com/things/product-market-codes/Z12000
615  0$aEngineering.
615  0$aSurfaces (Physics).
615  0$aOptical materials.
615 14$aNanoscale Science and Technology.
615 24$aNanotechnology and Microengineering.
615 24$aSemiconductors.
615 24$aCharacterization and Evaluation of Materials.
615 24$aElectronic Circuits and Devices.
615 24$aOptical and Electronic Materials.
676   $a620.5
700   $aFu$b Mengqi$4aut$4http://id.loc.gov/vocabulary/relators/aut$0835653
906   $aBOOK
912   $a9910300532403321
996   $aElectrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors$91867827
997   $aUNINA