LEADER 04605nam  22007935  450 
001 9910300393003321
005 20200705212707.0
010   $a3-642-54839-3
024 7 $a10.1007/978-3-642-54839-0
035   $a(CKB)2560000000148951
035   $a(EBL)1698385
035   $a(OCoLC)876744036
035   $a(SSID)ssj0001204882
035   $a(PQKBManifestationID)11668883
035   $a(PQKBTitleCode)TC0001204882
035   $a(PQKBWorkID)11180469
035   $a(PQKB)11525345
035   $a(MiAaPQ)EBC1698385
035   $a(DE-He213)978-3-642-54839-0
035   $a(PPN)178321958
035   $a(EXLCZ)992560000000148951
100   $a20140410d2014      u|         0
101 0 $aeng
135   $aur|n|---|||||
181   $ctxt
182   $cc
183   $acr
200 10$aElectric-Field Control of Magnetization and Electronic Transport in Ferromagnetic/Ferroelectric Heterostructures /$fby Sen Zhang
205   $a1st ed. 2014.
210  1$aBerlin, Heidelberg :$cSpringer Berlin Heidelberg :$cImprint: Springer,$d2014.
215   $a1 online resource (143 p.)
225 1 $aSpringer Theses, Recognizing Outstanding Ph.D. Research,$x2190-5053
300   $aDescription based upon print version of record.
311   $a3-642-54838-5 
327   $aIntroduction -- Experimental Methods -- Electric-field control of Magnetism in CoFeB/PMN-PT(001) Structure.- Electric-Field Control of Magnetism and Magnetoresistance in CoFeB/PMN-PT(011) Structure -- Summary and Outlook.
330   $aThis book mainly focuses on the investigation of the electric-field control of magnetism and spin-dependent transportation based on a Co40Fe40B20(CoFeB)/Pb(Mg1/3Nb2/3)0.7Ti0.3O3(PMN-PT) multiferroic heterostructure. Methods of characterization and analysis of the multiferroic properties with in situ electric fields are induced to detect the direct magnetoelectric (ME) coupling. A switchable and non-volatile electric field control of magnetization in CoFeB/PMN-PT(001) structures is observed at room temperature, and the mechanism of direct coupling between the ferroelectric domain and ferromagnetic film due to the combined action of 109° ferroelastic domain switching in PMN-PT and the absence of magnetocrystalline anisotropy in CoFeB is demonstrated. Moreover, the electric-field control of giant magnetoresistance is achieved in a CoFeB-based spin valve deposited on top of (011) oriented PMN-PT, which offers an avenue for implementing electric-writing and magnetic-reading random access memory at room temperature. Readers will learn the basic properties of multiferroic materials, many useful techniques related to characterizing multiferroics and the interesting ME effect in CoFeB/PMN-PT structures, which is significant for applications.
410  0$aSpringer Theses, Recognizing Outstanding Ph.D. Research,$x2190-5053
606   $aMagnetism
606   $aMagnetic materials
606   $aMaterials?Surfaces
606   $aThin films
606   $aElectronic circuits
606   $aMaterials science
606   $aSurfaces (Physics)
606   $aInterfaces (Physical sciences)
606   $aMagnetism, Magnetic Materials$3https://scigraph.springernature.com/ontologies/product-market-codes/P25129
606   $aSurfaces and Interfaces, Thin Films$3https://scigraph.springernature.com/ontologies/product-market-codes/Z19000
606   $aElectronic Circuits and Devices$3https://scigraph.springernature.com/ontologies/product-market-codes/P31010
606   $aCharacterization and Evaluation of Materials$3https://scigraph.springernature.com/ontologies/product-market-codes/Z17000
606   $aSurface and Interface Science, Thin Films$3https://scigraph.springernature.com/ontologies/product-market-codes/P25160
615  0$aMagnetism.
615  0$aMagnetic materials.
615  0$aMaterials?Surfaces.
615  0$aThin films.
615  0$aElectronic circuits.
615  0$aMaterials science.
615  0$aSurfaces (Physics)
615  0$aInterfaces (Physical sciences)
615 14$aMagnetism, Magnetic Materials.
615 24$aSurfaces and Interfaces, Thin Films.
615 24$aElectronic Circuits and Devices.
615 24$aCharacterization and Evaluation of Materials.
615 24$aSurface and Interface Science, Thin Films.
676   $a538.3
700   $aZhang$b Sen$4aut$4http://id.loc.gov/vocabulary/relators/aut$0792017
906   $aBOOK
912   $a9910300393003321
996   $aElectric-Field Control of Magnetization and Electronic Transport in Ferromagnetic$91770890
997   $aUNINA