LEADER 04709nam 22008175 450 001 9910300376103321 005 20200704123153.0 010 $a3-319-01339-4 024 7 $a10.1007/978-3-319-01339-8 035 $a(CKB)3710000000078574 035 $a(DE-He213)978-3-319-01339-8 035 $a(SSID)ssj0001067343 035 $a(PQKBManifestationID)11616921 035 $a(PQKBTitleCode)TC0001067343 035 $a(PQKBWorkID)11081893 035 $a(PQKB)10489671 035 $a(MiAaPQ)EBC3107044 035 $a(PPN)176104038 035 $a(EXLCZ)993710000000078574 100 $a20131104d2014 u| 0 101 0 $aeng 135 $aurnn|008mamaa 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aDebye Screening Length $eEffects of Nanostructured Materials /$fby Kamakhya Prasad Ghatak, Sitangshu Bhattacharya 205 $a1st ed. 2014. 210 1$aCham :$cSpringer International Publishing :$cImprint: Springer,$d2014. 215 $a1 online resource (XXXIII, 385 p. 123 illus.) 225 1 $aSpringer Tracts in Modern Physics,$x0081-3869 ;$v255 300 $aBibliographic Level Mode of Issuance: Monograph 311 $a3-319-01338-6 327 $aFrom the Contents: Part I Influence of Light Waves on the DSL in Optoelectronic Semiconductors -- Part II Influence of Quantum Confinement on the DSL in Non-Parabolic Semiconductors -- Part III Influence of Intense Electric Field on the DSL in Optoelectronic Semiconductors. 330 $aThis monograph solely investigates the Debye Screening Length (DSL) in semiconductors and their nano-structures. The materials considered are quantized structures of non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V and Bismuth Telluride respectively. The DSL in opto-electronic materials and their quantum confined counterparts is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestions for the experimental determination of 2D and 3D DSL and the importance of measurement of band gap in optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring photon induced physical properties) have also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the DSL and the DSL in heavily doped semiconductors and their nanostructures has been investigated. This monograph contains 150 open research problems which form the integral part of the text and are useful for both PhD students and researchers in the fields of solid-state sciences, materials science, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures. 410 0$aSpringer Tracts in Modern Physics,$x0081-3869 ;$v255 606 $aSemiconductors 606 $aOptical materials 606 $aElectronic materials 606 $aSolid state physics 606 $aNanotechnology 606 $aNanoscale science 606 $aNanoscience 606 $aNanostructures 606 $aSemiconductors$3https://scigraph.springernature.com/ontologies/product-market-codes/P25150 606 $aOptical and Electronic Materials$3https://scigraph.springernature.com/ontologies/product-market-codes/Z12000 606 $aSolid State Physics$3https://scigraph.springernature.com/ontologies/product-market-codes/P25013 606 $aNanotechnology$3https://scigraph.springernature.com/ontologies/product-market-codes/Z14000 606 $aNanoscale Science and Technology$3https://scigraph.springernature.com/ontologies/product-market-codes/P25140 615 0$aSemiconductors. 615 0$aOptical materials. 615 0$aElectronic materials. 615 0$aSolid state physics. 615 0$aNanotechnology. 615 0$aNanoscale science. 615 0$aNanoscience. 615 0$aNanostructures. 615 14$aSemiconductors. 615 24$aOptical and Electronic Materials. 615 24$aSolid State Physics. 615 24$aNanotechnology. 615 24$aNanoscale Science and Technology. 676 $a621.381520287 700 $aGhatak$b Kamakhya Prasad$4aut$4http://id.loc.gov/vocabulary/relators/aut$0524116 702 $aBhattacharya$b Sitangshu$4aut$4http://id.loc.gov/vocabulary/relators/aut 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910300376103321 996 $aDebye Screening Length$92525347 997 $aUNINA