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024 7 $a10.1007/978-3-319-01970-3
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100   $a20130930d2014      u|         0
101 0 $aeng
135   $aur|n|---|||||
181   $ctxt
182   $cc
183   $acr
200 10$aSelf-Organized Quantum Dots for Memories $eElectronic Properties and Carrier Dynamics /$fby Tobias Nowozin
205   $a1st ed. 2014.
210  1$aCham :$cSpringer International Publishing :$cImprint: Springer,$d2014.
215   $a1 online resource (163 p.)
225 1 $aSpringer Theses, Recognizing Outstanding Ph.D. Research,$x2190-5053
300   $aDoctoral thesis accepted by the Technical University, Berlin, Germany.
311   $a3-319-01969-4 
320   $aIncludes bibliographical references.
327   $aFundamentals -- Charge carriers in quantum dots -- Coupling of QDs to 2D gases -- Measurement methods -- Electronic properties of and storage times in QDs -- Carrier dynamics in quantum dots coupled to a 2DHG -- Summary and Outlook -- Storage time as a function of the localization energy -- Experimental details - Setup -- Samples -- Sample Processing -- DLTS: Error of graphical analysis -- Extrapolation of storage times.
330   $aToday?s semiconductor memory market is divided between two types of memory: DRAM and Flash. Each has its own advantages and disadvantages. While DRAM is fast but volatile, Flash is non-volatile but slow. A memory system based on self-organized quantum dots (QDs) as storage node could combine the advantages of modern DRAM and Flash, thus merging the latter?s non-volatility with very fast write times.   This thesis investigates the electronic properties of and carrier dynamics in self-organized quantum dots by means of time-resolved capacitance spectroscopy and time-resolved current measurements. The first aim is to study the localization energy of various QD systems in order to assess the potential of increasing the storage time in QDs to non-volatility. Surprisingly, it is found that the major impact of carrier capture cross-sections of QDs is to influence, and at times counterbalance, carrier storage in addition to the localization energy. The second aim is to study the coupling between a layer of self-organized QDs and a two-dimensional hole gas (2DHG), which is relevant for the read-out process in memory systems. The investigation yields the discovery of the many-particle ground states in the QD ensemble. In addition to its technological relevance, the thesis also offers new insights into the fascinating field of nanostructure physics.
410  0$aSpringer Theses, Recognizing Outstanding Ph.D. Research,$x2190-5053
606   $aSemiconductors
606   $aNanotechnology
606   $aElectronic circuits
606   $aComputer storage devices
606   $aSemiconductors$3https://scigraph.springernature.com/ontologies/product-market-codes/P25150
606   $aNanotechnology$3https://scigraph.springernature.com/ontologies/product-market-codes/Z14000
606   $aElectronic Circuits and Devices$3https://scigraph.springernature.com/ontologies/product-market-codes/P31010
606   $aNanotechnology and Microengineering$3https://scigraph.springernature.com/ontologies/product-market-codes/T18000
606   $aMemory Structures$3https://scigraph.springernature.com/ontologies/product-market-codes/I12034
615  0$aSemiconductors.
615  0$aNanotechnology.
615  0$aElectronic circuits.
615  0$aComputer storage devices.
615 14$aSemiconductors.
615 24$aNanotechnology.
615 24$aElectronic Circuits and Devices.
615 24$aNanotechnology and Microengineering.
615 24$aMemory Structures.
676   $a004.53
700   $aNowozin$b Tobias$4aut$4http://id.loc.gov/vocabulary/relators/aut$0791377
906   $aBOOK
912   $a9910300371903321
996   $aSelf-Organized Quantum Dots for Memories$91768762
997   $aUNINA