LEADER 02635oam 2200421 450 001 9910299747703321 005 20190911103512.0 010 $a1-4614-7909-6 024 7 $a10.1007/978-1-4614-7909-3 035 $a(OCoLC)871239036 035 $a(MiFhGG)GVRL6UYP 035 $a(EXLCZ)992550000001151550 100 $a20130826d2014 uy 0 101 0 $aeng 135 $aurun|---uuuua 181 $ctxt 182 $cc 183 $acr 200 00$aBias temperature instability for devices and circuits /$fTibor Grasser, editor 205 $a1st ed. 2014. 210 1$aNew York :$cSpringer,$d2014. 215 $a1 online resource (xi, 810 pages) $cillustrations (some color) 225 0 $aGale eBooks 300 $aDescription based upon print version of record. 311 $a1-4614-7908-8 320 $aIncludes bibliographical references. 327 $aIntroduction -- Characterization, Experimental Challenges -- Advanced Characterization -- Characterization of Nanoscale Devices -- Statistical Properties/Variability -- Theoretical Understanding -- Possible Defects: Experimental -- Possible Defects: First Principles -- Modeling -- Technological Impact -- Silicon dioxides/SiON -- High-k oxides -- Alternative technologies -- Circuits. 330 $aThis book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability.  Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.  ·         Enables readers to understand and model negative bias temperature instability, with an emphasis on dynamics; ·         Includes coverage of DC vs. AC stress, duty factor dependence and bias dependence; ·         Explains time dependent defect spectroscopy, as a measurement method that operates on nanoscale MOSFETs; ·         Introduces new defect model for metastable defect states, nonradiative multiphonon theory and stochastic behavior. 606 $aMetal oxide semiconductor field-effect transistors 615 0$aMetal oxide semiconductor field-effect transistors. 676 $a621.3192 702 $aGrasser$b Tibor 801 0$bMiFhGG 801 1$bMiFhGG 906 $aBOOK 912 $a9910299747703321 996 $aBias Temperature Instability for Devices and Circuits$91979701 997 $aUNINA