LEADER 01325nam a2200325 i 4500 001 991000702599707536 005 20020507172457.0 008 970312s1971 de ||| | eng 020 $a3540054359 035 $ab10745361-39ule_inst 035 $aLE01300958$9ExL 040 $aDip.to Matematica$beng 082 0 $a515.352 084 $aAMS 34D 100 1 $aCesari, Lamberto$040585 245 10$aAsymptotic behavior and stability problems in ordinary differential equations /$cLamberto Cesari 250 $a3rd ed 260 $aBerlin :$bSpringer-Verlag,$c1971 300 $aix, 270 p. ;$c24 cm 490 1 $aErgebnisse der Mathematik und ihrer Grenzgebiete. 3. Folge,$x0071-1136 ;$v16 =$aA series of modern surveys in mathematics,$x0071-1136 ;$v16 500 $aBibliography: p. 197-266 650 0$aDifferential equations 650 0$aStability theory 830 0$aErgebnisse der Mathematik und ihrer Grenzgebiete. 3. Folge ;$v16 907 $a.b10745361$b20-11-06$c28-06-02 912 $a991000702599707536 945 $aLE013 34D CES11 (1971)$g1$i2013000079073$lle013$o-$pE0.00$q-$rl$s- $t0$u1$v0$w1$x0$y.i10837437$z28-06-02 996 $aAsymptotic Behavior and Stability Problems in Ordinary Differential Equations$9345836 997 $aUNISALENTO 998 $ale013$b01-01-97$cm$da $e-$feng$gde $h0$i1 LEADER 04079nam 2200613Ia 450 001 9910299728503321 005 20200520144314.0 010 $a94-007-6799-4 024 7 $a10.1007/978-94-007-6799-7 035 $a(CKB)2670000000424563 035 $a(SSID)ssj0000962396 035 $a(PQKBManifestationID)11542628 035 $a(PQKBTitleCode)TC0000962396 035 $a(PQKBWorkID)10970219 035 $a(PQKB)10902237 035 $a(MiAaPQ)EBC1399059 035 $a(DE-He213)978-94-007-6799-7 035 $a(PPN)172433517 035 $a(EXLCZ)992670000000424563 100 $a20111102d2014 uy 0 101 0 $aeng 135 $aurcn||||||||| 181 $ctxt 182 $cc 183 $acr 200 10$aPoly-SiGe for MEMS-above-CMOS sensors /$fPilar Gonzalez Ruiz, Kristen De Meyer, Ann Witvrouw 205 $a1st ed. 2014. 210 $aDordrecht $cSpringer Science$d2014 215 $axvi, 199 p 225 0$aSpringer series in advanced microelectronics ;$v44 300 $aBibliographic Level Mode of Issuance: Monograph 311 $a94-017-8140-0 311 $a94-007-6798-6 320 $aIncludes bibliographical references. 327 $aAcknowledgements -- Abstract -- Symbols and Abbreviations -- Introduction -- Poly-SiGe As Piezoresistive Material -- Design of a Poly-SiGe Piezoresistive Pressure Sensor -- The Pressure Sensor Fabrication Process -- Sealing of Surface Micromachined Poly-SiGe Cavities -- Characterization of Poly-SiGe pressure sensors -- CMOS Integrated Poly-SiGe Piezoresistive Pressure Sensor -- Conclusions And Future Work -- Appendix A -- Appendix B -- Appendix C -- Appendix D. 330 $aPolycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. This CMOS-MEMS monolithic integration can lead to more compact MEMS with improved performance. The potential of poly-SiGe for MEMS above-aluminum-backend CMOS integration has already been demonstrated. However, aggressive interconnect scaling has led to the replacement of the traditional aluminum metallization by copper (Cu) metallization, due to its lower resistivity and improved reliability. Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 ?m Cu-backend CMOS. Furthermore, this book presents the first detailed investigation on the influence of deposition conditions, germanium content and doping concentration on the electrical and piezoresistive properties of boron-doped poly-SiGe. The development of a CMOS-compatible process flow, with special attention to the sealing method, is also described. Piezoresistive pressure sensors with different areas and piezoresistor designs were fabricated and tested. Together with the piezoresistive pressure sensors, also functional capacitive pressure sensors were successfully fabricated on the same wafer, proving the versatility of poly-SiGe for MEMS sensor applications. Finally, a detailed analysis of the MEMS processing impact on the underlying CMOS circuit is also presented. 410 0$aSpringer Series in Advanced Microelectronics,$x1437-0387 ;$v44 606 $aMicroelectromechanical systems 606 $aMetal oxide semiconductors, Complementary 606 $aPolycrystals 615 0$aMicroelectromechanical systems. 615 0$aMetal oxide semiconductors, Complementary. 615 0$aPolycrystals. 676 $a621.3815 700 $aGonzaalez Ruiz$b Pilar$01754391 701 $aMeyer$b Kristen De$01754392 701 $aWitvrouw$b Ann$01754393 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910299728503321 996 $aPoly-SiGe for MEMS-above-CMOS sensors$94190719 997 $aUNINA