LEADER 03868nam 22006375 450 001 9910299617403321 005 20220331154633.0 010 $a3-319-00500-6 024 7 $a10.1007/978-3-319-00500-3 035 $a(CKB)3710000000261914 035 $a(EBL)1967889 035 $a(OCoLC)893103410 035 $a(SSID)ssj0001372682 035 $a(PQKBManifestationID)11824362 035 $a(PQKBTitleCode)TC0001372682 035 $a(PQKBWorkID)11304866 035 $a(PQKB)10515361 035 $a(MiAaPQ)EBC1967889 035 $a(DE-He213)978-3-319-00500-3 035 $a(PPN)182099199 035 $a(EXLCZ)993710000000261914 100 $a20141008d2014 u| 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aLateral Power Transistors in Integrated Circuits /$fby Tobias Erlbacher 205 $a1st ed. 2014. 210 1$aCham :$cSpringer International Publishing :$cImprint: Springer,$d2014. 215 $a1 online resource (235 p.) 225 1 $aPower Systems,$x1612-1287 300 $aDescription based upon print version of record. 311 $a3-319-00499-9 320 $aIncludes bibliographical references and index. 327 $aIntroduction -- Literature Review -- Research Methods. 330 $aThe book summarizes and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. In its first part, the book motivates the necessity for lateral power transistors by a top-down approach: First, it presents typical energy conversion applications in modern industrial, automotive and consumer electronics. Next, it introduces common circuit topologies suitable for these applications, and discusses the feasibility for monolithic integration. Finally, the combination of power and logic functionality on a single chip is motivated and the requirements and limitations for the power semiconductor devices are deduced. The second part describes the evolution of lateral power transistors over the past decades from the simple pin-type concept to double-acting RESURF topologies. It describes the principle of operation for these LDMOS devices and discusses limitations of lateral power devices. Moreover, figures-of-merit are presented which can be used to evaluate the performance of the novel lateral power transistors described in this book with respect to the LDMOS devices. In the last part, [..] the fundamental physical concepts including charge compensation and trench gate topologies are discussed. Also, the status of research in LDMOS devices on silicon carbide is presented. Advantages and drawbacks for each of these integration approaches are summarized, and the feasibility with respect to power electronic applications is evaluated. 410 0$aPower Systems,$x1612-1287 606 $aElectronic circuits 606 $aPower electronics 606 $aCircuits and Systems$3https://scigraph.springernature.com/ontologies/product-market-codes/T24068 606 $aPower Electronics, Electrical Machines and Networks$3https://scigraph.springernature.com/ontologies/product-market-codes/T24070 606 $aElectronic Circuits and Devices$3https://scigraph.springernature.com/ontologies/product-market-codes/P31010 615 0$aElectronic circuits. 615 0$aPower electronics. 615 14$aCircuits and Systems. 615 24$aPower Electronics, Electrical Machines and Networks. 615 24$aElectronic Circuits and Devices. 676 $a620 676 $a621.317 676 $a621.3815 700 $aErlbacher$b Tobias$4aut$4http://id.loc.gov/vocabulary/relators/aut$0929444 906 $aBOOK 912 $a9910299617403321 996 $aLateral Power Transistors in Integrated Circuits$92089192 997 $aUNINA