LEADER 04180nam  22006255  450 
001 9910299588703321
005 20200704064541.0
010   $a981-10-5290-5
024 7 $a10.1007/978-981-10-5290-3
035   $a(CKB)4100000000586849
035   $a(DE-He213)978-981-10-5290-3
035   $a(MiAaPQ)EBC5024551
035   $a(PPN)204531993
035   $a(EXLCZ)994100000000586849
100   $a20170906d2018      u|         0
101 0 $aeng
135   $aurnn|008mamaa
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aQuaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors $eFrom Materials to Devices /$fby Sourav Adhikary, Subhananda Chakrabarti
205   $a1st ed. 2018.
210  1$aSingapore :$cSpringer Singapore :$cImprint: Springer,$d2018.
215   $a1 online resource (XIII, 63 p. 35 illus., 16 illus. in color.) 
311   $a981-10-5289-1 
320   $aIncludes bibliographical references at the end of each chapters and index.
327   $aChapter 1: Introduction -- Chapter 2: Structural and Optical Characterization of Quaternary-Capped InAs/GaAs Quantum Dots -- Chapter 3: Effect of Rapid-Thermal Annealing on Quantum Dot Properties -- Chapter 4: In(Ga)As/GaAs Quantum Dot Infrared Photodetectors (QDIPs) with Quaternary Capping -- Chapter 5: Effects of RTA on Quaternary Capped QDIP Characteristics -- Chapter 6: Summary and Future Work.
330   $aThis book introduces some alternative methods for enhancing the performance of In(Ga)As/GaAs-based quantum dot infrared photodetectors (QDIPs). In(Ga)As/GaAs-based QDIPs and focal plane array (FPA) cameras have wide application in fields such as military and space science. The core of the study uses a combination of quaternary In0.21Al0.21Ga0.58As and GaAs spacer as a capping layer on In(Ga)As/GaAs quantum dots in the active region of the detector structure. For the purposes of optimization, three types of samples growths are considered with different capping thicknesses. The results presented include TEM, XRD and photoluminescence studies that compare combination barrier thickness and its effect on structural and optical properties. Compressive strain within the heterostructure, thermal stability in high temperature annealing, spectral response, shifts in PL peaks peak,and  responsivity and detectivity are all considered. The results also present a narrow spectral width that was obtained by using InAs QDs which is very useful for third generation FPA camera application. The book details effect of post-growth rapid thermal annealing on device characteristics and methods to enhance responsivity and peak detectivity. The contents of this book will be useful to researchers and professionals alike.
606   $aElectronic circuits
606   $aLasers
606   $aPhotonics
606   $aSignal processing
606   $aImage processing
606   $aSpeech processing systems
606   $aCircuits and Systems$3https://scigraph.springernature.com/ontologies/product-market-codes/T24068
606   $aElectronic Circuits and Devices$3https://scigraph.springernature.com/ontologies/product-market-codes/P31010
606   $aOptics, Lasers, Photonics, Optical Devices$3https://scigraph.springernature.com/ontologies/product-market-codes/P31030
606   $aSignal, Image and Speech Processing$3https://scigraph.springernature.com/ontologies/product-market-codes/T24051
615  0$aElectronic circuits.
615  0$aLasers.
615  0$aPhotonics.
615  0$aSignal processing.
615  0$aImage processing.
615  0$aSpeech processing systems.
615 14$aCircuits and Systems.
615 24$aElectronic Circuits and Devices.
615 24$aOptics, Lasers, Photonics, Optical Devices.
615 24$aSignal, Image and Speech Processing.
676   $a621.3815
700   $aAdhikary$b Sourav$4aut$4http://id.loc.gov/vocabulary/relators/aut$01063485
702   $aChakrabarti$b Subhananda$4aut$4http://id.loc.gov/vocabulary/relators/aut
906   $aBOOK
912   $a9910299588703321
996   $aQuaternary Capped In(Ga)As$92532676
997   $aUNINA