LEADER 04515nam 22006375 450 001 9910299568203321 005 20251230061055.0 010 $a981-10-7191-8 024 7 $a10.1007/978-981-10-7191-1 035 $a(CKB)4340000000223674 035 $a(DE-He213)978-981-10-7191-1 035 $a(MiAaPQ)EBC5163235 035 $a(PPN)221247564 035 $a(EXLCZ)994340000000223674 100 $a20171127d2018 u| 0 101 0 $aeng 135 $aurnn|008mamaa 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aNanoelectronic Materials and Devices $eSelect Proceedings of ICNETS2, Volume III /$fedited by Christophe Labbé, Subhananda Chakrabarti, Gargi Raina, B. Bindu 205 $a1st ed. 2018. 210 1$aSingapore :$cSpringer Nature Singapore :$cImprint: Springer,$d2018. 215 $a1 online resource (XII, 246 p. 197 illus., 73 illus. in color.) 225 1 $aLecture Notes in Electrical Engineering,$x1876-1119 ;$v466 311 08$a981-10-7190-X 320 $aIncludes bibliographical references at the end of each chapters and index. 327 $aThe Effect of Functionalized MWCNT on Mechanical and Electrical Properties of PMMA Nanocomposites -- Performance Analysis of Dual-Metal Double-Gate Tunnel-Fets for Ultralow Power Applications -- Films of Reduced Graphene Oxide based Metal Oxide Nanoparticles -- Size optimization of InAs/GaAs quantum dots for longer storage memory applications -- Design and Analysis of a CMOS 180 nm Fractional N Frequency Synthesizer -- Memristor based Approximate Adders for Error Resilient Applications -- Integrated Mems Capacitive Pressure Sensor with On-Chip CDC for a wide Operating Temperature Range -- A High SNDR and Wider Signal Bandwidth CT ?? Modulator with a Single Loop Non-linear Feedback Compensation -- Design of Current Mode CNTFET Transceiver for Bundled Carbon Nanotube Interconnect -- Weak Cell Detection Techniques for Memristor Based Memories -- Enhancement of Transconductance using Multi-recycle Folded Cascode Amplifier -- Nondestructive Read Circuit for Memristor based Memories -- A Built in Self Repair Architecture for Random Access Memories -- A Current Mode DC-DC Boost Converter with Fast Transient and on-chip Current Sensing Technique -- A Modified GDI Based Low Power & High Read Stability 8T SRAM Memory with CNTFET Technology -- High Performance Trench Gate Power MOSFET of Indium Phosphide -- Memristor Equipped Error Detection Technique -- 28nm FD-SOI SRAM Design using Read Stable Bit Cell Architecture -- Design and Verification of Memory Controller with Host WISHBONE Interface -- 8-Bit Asynchronous Wave-Pipelined Arithmetic-Logic Unit. 330 $aThis book gathers a collection of papers by international experts that were presented at the International Conference on NextGen Electronic Technologies (ICNETS2-2016). ICNETS2 encompassed six symposia covering all aspects of the electronics and communications domains, including relevant nano/micro materials and devices. Highlighting the latest research on nanoelectronic materials and devices, the book offers a valuable guide for researchers, practitioners and students working in the core areas of functional electronics nanomaterials, nanocomposites for energy application, sensing and high strength materials and simulation of novel device design structures for ultra-low power applications.  . 410 0$aLecture Notes in Electrical Engineering,$x1876-1119 ;$v466 606 $aMicrotechnology 606 $aMicroelectromechanical systems 606 $aNanotechnology 606 $aNanoscience 606 $aMicrosystems and MEMS 606 $aNanotechnology 606 $aNanophysics 615 0$aMicrotechnology. 615 0$aMicroelectromechanical systems. 615 0$aNanotechnology. 615 0$aNanoscience. 615 14$aMicrosystems and MEMS. 615 24$aNanotechnology. 615 24$aNanophysics. 676 $a621.3 702 $aLabbé$b Christophe$4edt$4http://id.loc.gov/vocabulary/relators/edt 702 $aChakrabarti$b Subhananda$4edt$4http://id.loc.gov/vocabulary/relators/edt 702 $aRaina$b Gargi$4edt$4http://id.loc.gov/vocabulary/relators/edt 702 $aBindu$b B$4edt$4http://id.loc.gov/vocabulary/relators/edt 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910299568203321 996 $aNanoelectronic Materials and Devices$92535153 997 $aUNINA