LEADER 04141nam 22005535 450 001 9910299564703321 005 20200702222623.0 010 $a981-10-6550-0 024 7 $a10.1007/978-981-10-6550-7 035 $a(CKB)4100000000881594 035 $a(DE-He213)978-981-10-6550-7 035 $a(MiAaPQ)EBC5116905 035 $a(PPN)220123217 035 $a(EXLCZ)994100000000881594 100 $a20171030d2018 u| 0 101 0 $aeng 135 $aurnn|008mamaa 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aAnalytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor /$fby Iraj Sadegh Amiri, Mahdiar Ghadiry 205 $a1st ed. 2018. 210 1$aSingapore :$cSpringer Singapore :$cImprint: Springer,$d2018. 215 $a1 online resource (IX, 86 p. 55 illus., 16 illus. in color.) 225 1 $aSpringerBriefs in Applied Sciences and Technology,$x2191-530X 311 $a981-10-6549-7 327 $aIntroduction on Scaling Issues of Conventional Semiconductors -- Basic Concept of Field Effect Transistors -- Methodology for Modelling of Surface Potemntial, Ionization and Breakdown of Graphene Field Effect Transistors -- Results and Discussion on Ionization and Breakdown of Grapehene Field Efffect Transistor -- Conclusion and Futureworks on High Voltage Application of Graphene. 330 $aThis book discusses analytical approaches and modeling of the breakdown voltage (BV) effects on graphene-based transistors. It presents semi-analytical models for lateral electric field, length of velocity saturation region (LVSR), ionization coefficient (?), and breakdown voltage (BV) of single and double-gate graphene nanoribbon field effect transistors (GNRFETs). The application of Gauss?s law at drain and source regions is employed in order to derive surface potential and lateral electric field equations. LVSR is then calculated as a solution of surface potential at saturation condition. The ionization coefficient is modelled and calculated by deriving equations for probability of collisions in ballistic and drift modes based on the lucky drift theory of ionization. The threshold energy of ionization is computed using simulation and an empirical equation is derived semi-analytically. Lastly avalanche breakdown condition is employed to calculate the lateral BV. On the basis of this, simple analytical and semi-analytical models are proposed for the LVSR and BV, which could be used in the design and optimization of semiconductor devices and sensors. The proposed equations are used to examine BV at different channel lengths, supply voltages, oxide thickness, GNR widths, and gate voltages. Simulation results show that the operating voltage of FETs could be as low as 0.25 V in order to prevent breakdown. However, after optimization, it can go as high as 1.5 V. This work is useful for researchers working in the area of graphene nanoribbon-based transistors. 410 0$aSpringerBriefs in Applied Sciences and Technology,$x2191-530X 606 $aNanotechnology 606 $aElectronic circuits 606 $aNanotechnology and Microengineering$3https://scigraph.springernature.com/ontologies/product-market-codes/T18000 606 $aElectronic Circuits and Devices$3https://scigraph.springernature.com/ontologies/product-market-codes/P31010 606 $aNanotechnology$3https://scigraph.springernature.com/ontologies/product-market-codes/Z14000 615 0$aNanotechnology. 615 0$aElectronic circuits. 615 14$aNanotechnology and Microengineering. 615 24$aElectronic Circuits and Devices. 615 24$aNanotechnology. 676 $a621.3815284 700 $aAmiri$b Iraj Sadegh$4aut$4http://id.loc.gov/vocabulary/relators/aut$0720753 702 $aGhadiry$b Mahdiar$4aut$4http://id.loc.gov/vocabulary/relators/aut 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910299564703321 996 $aAnalytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor$92524117 997 $aUNINA