LEADER 04361nam 22006615 450 001 9910299562903321 005 20200705015042.0 010 $a981-10-3066-9 024 7 $a10.1007/978-981-10-3066-6 035 $a(CKB)4340000000062843 035 $a(DE-He213)978-981-10-3066-6 035 $a(MiAaPQ)EBC5576688 035 $a(PPN)202989046 035 $a(EXLCZ)994340000000062843 100 $a20170621d2018 u| 0 101 0 $aeng 135 $aurnn#008mamaa 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$a3D TCAD Simulation for CMOS Nanoeletronic Devices /$fby Yung-Chun Wu, Yi-Ruei Jhan 205 $a1st ed. 2018. 210 1$aSingapore :$cSpringer Singapore :$cImprint: Springer,$d2018. 215 $a1 online resource (XIII, 330 p. 243 illus., 240 illus. in color.) 311 $a981-10-3065-0 320 $aIncludes bibliographical references. 327 $aIntroduction of Synopsys Sentaurus TCAD 2014 version software environment operation interface and tools -- Simulation analysis of 2D MOSFET -- Simulation analysis of 3D FinFET with LG = 15 nm -- Simulation analysis of Inverter and SRAM of 3D FinFET with LG = 15 nm -- Simulation analysis of GAA NWFET -- Simulation analysis of Junctionless FET with LG = 10 nm -- Simulation analysis of Tunnel FET -- Simulation analysis of Si and Ge 3D FinFET with LG = 3 nm. 330 $aThis book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal?oxide?semiconductor) semiconductor nanoelectronic devices, while also providing selected source codes (Technology Computer-Aided Design, TCAD). Instead of the built-in examples of Sentaurus TCAD 2014, the practical cases presented here, based on years of teaching and research experience, are used to interpret and analyze simulation results of the physical and electrical properties of designed 3D CMOSFET (metal?oxide?semiconductor field-effect transistor) nanoelectronic devices. The book also addresses in detail the fundamental theory of advanced semiconductor device design for the further simulation and analysis of electric and physical properties of semiconductor devices. The design and simulation technologies for nano-semiconductor devices explored here are more practical in nature and representative of the semiconductor industry, and as such can promote the development of pioneering semiconductor devices, semiconductor device physics, and more practically-oriented approaches to teaching and learning semiconductor engineering. The book can be used for graduate and senior undergraduate students alike, while also offering a reference guide for engineers and experts in the semiconductor industry. Readers are expected to have some preliminary knowledge of the field. 606 $aElectronics 606 $aMicroelectronics 606 $aSemiconductors 606 $aNanotechnology 606 $aIndustrial engineering 606 $aProduction engineering 606 $aElectronics and Microelectronics, Instrumentation$3https://scigraph.springernature.com/ontologies/product-market-codes/T24027 606 $aSemiconductors$3https://scigraph.springernature.com/ontologies/product-market-codes/P25150 606 $aNanotechnology and Microengineering$3https://scigraph.springernature.com/ontologies/product-market-codes/T18000 606 $aIndustrial and Production Engineering$3https://scigraph.springernature.com/ontologies/product-market-codes/T22008 615 0$aElectronics. 615 0$aMicroelectronics. 615 0$aSemiconductors. 615 0$aNanotechnology. 615 0$aIndustrial engineering. 615 0$aProduction engineering. 615 14$aElectronics and Microelectronics, Instrumentation. 615 24$aSemiconductors. 615 24$aNanotechnology and Microengineering. 615 24$aIndustrial and Production Engineering. 676 $a621.381 700 $aWu$b Yung-Chun$4aut$4http://id.loc.gov/vocabulary/relators/aut$01063880 702 $aJhan$b Yi-Ruei$4aut$4http://id.loc.gov/vocabulary/relators/aut 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910299562903321 996 $a3D TCAD Simulation for CMOS Nanoeletronic Devices$92535146 997 $aUNINA