LEADER 05517nam 22007935 450 001 9910254628103321 005 20200704105820.0 010 $a94-024-0841-X 024 7 $a10.1007/978-94-024-0841-6 035 $a(CKB)3710000000847059 035 $a(EBL)4670570 035 $a(DE-He213)978-94-024-0841-6 035 $a(MiAaPQ)EBC4670570 035 $a(PPN)195508653 035 $a(EXLCZ)993710000000847059 100 $a20160902d2016 u| 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aFerroelectric-Gate Field Effect Transistor Memories $eDevice Physics and Applications /$fedited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon 205 $a1st ed. 2016. 210 1$aDordrecht :$cSpringer Netherlands :$cImprint: Springer,$d2016. 215 $a1 online resource (350 p.) 225 1 $aTopics in Applied Physics,$x0303-4216 ;$v131 300 $aDescription based upon print version of record. 311 $a94-024-0839-8 320 $aIncludes bibliographical references. 327 $aOperation Principle of One-Transistor Type Ferroelectric-gate Field Effect Transistors -- Practical Characteristics of Inorganic Ferroelectric-gate FETs -- Si-Based Ferroelectric-gate Field Effect Transistors -- Thin film-Based Ferroelectric-gate Field Effect Transistors -- Practical Characteristics of Organic Ferroelectric-gate FETs -- Si-Based Ferroelectric-gate Field Effect Transistors -- Thin film-Based Ferroelectric-gate Field Effect Transistors -- Ferroelectric-gate Field Effect Transistors with flexible substrates -- Applications and Future Prospects. 330 $aThis book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide readers with the development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass or plastic substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films. 410 0$aTopics in Applied Physics,$x0303-4216 ;$v131 606 $aElectronic circuits 606 $aElectronics 606 $aMicroelectronics 606 $aMaterials?Surfaces 606 $aThin films 606 $aSurfaces (Physics) 606 $aInterfaces (Physical sciences) 606 $aElectronic Circuits and Devices$3https://scigraph.springernature.com/ontologies/product-market-codes/P31010 606 $aElectronics and Microelectronics, Instrumentation$3https://scigraph.springernature.com/ontologies/product-market-codes/T24027 606 $aSurfaces and Interfaces, Thin Films$3https://scigraph.springernature.com/ontologies/product-market-codes/Z19000 606 $aCircuits and Systems$3https://scigraph.springernature.com/ontologies/product-market-codes/T24068 606 $aSurface and Interface Science, Thin Films$3https://scigraph.springernature.com/ontologies/product-market-codes/P25160 615 0$aElectronic circuits. 615 0$aElectronics. 615 0$aMicroelectronics. 615 0$aMaterials?Surfaces. 615 0$aThin films. 615 0$aSurfaces (Physics). 615 0$aInterfaces (Physical sciences). 615 14$aElectronic Circuits and Devices. 615 24$aElectronics and Microelectronics, Instrumentation. 615 24$aSurfaces and Interfaces, Thin Films. 615 24$aCircuits and Systems. 615 24$aSurface and Interface Science, Thin Films. 676 $a530 702 $aPark$b Byung-Eun$4edt$4http://id.loc.gov/vocabulary/relators/edt 702 $aIshiwara$b Hiroshi$4edt$4http://id.loc.gov/vocabulary/relators/edt 702 $aOkuyama$b Masanori$4edt$4http://id.loc.gov/vocabulary/relators/edt 702 $aSakai$b Shigeki$4edt$4http://id.loc.gov/vocabulary/relators/edt 702 $aYoon$b Sung-Min$4edt$4http://id.loc.gov/vocabulary/relators/edt 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910254628103321 996 $aFerroelectric-Gate Field Effect Transistor Memories$91933884 997 $aUNINA