LEADER 04612nam 22008415 450 001 9910254605303321 005 20200705084929.0 010 $a3-319-21000-9 024 7 $a10.1007/978-3-319-21000-1 035 $a(CKB)3710000000521730 035 $a(SSID)ssj0001585050 035 $a(PQKBManifestationID)16265770 035 $a(PQKBTitleCode)TC0001585050 035 $a(PQKBWorkID)14865240 035 $a(PQKB)10628336 035 $a(DE-He213)978-3-319-21000-1 035 $a(MiAaPQ)EBC6301217 035 $a(MiAaPQ)EBC5587879 035 $a(Au-PeEL)EBL5587879 035 $a(OCoLC)1066185502 035 $a(PPN)190527730 035 $a(EXLCZ)993710000000521730 100 $a20151026d2016 u| 0 101 0 $aeng 135 $aurnn|008mamaa 181 $ctxt 182 $cc 183 $acr 200 10$aDispersion Relations in Heavily-Doped Nanostructures /$fby Kamakhya Prasad Ghatak 205 $a1st ed. 2016. 210 1$aCham :$cSpringer International Publishing :$cImprint: Springer,$d2016. 215 $a1 online resource (LV, 625 p. 31 illus.) 225 1 $aSpringer Tracts in Modern Physics,$x0081-3869 ;$v265 300 $aIncludes index. 311 $a3-319-20999-X 327 $aFrom the Contents: The DR in Quantum Wells (QWs) of Heavily Doped(HD) Non-Parabolic Semiconductors -- The DR in Nano-Wires (NWs) of Heavily Doped (HD) Non-Parabolic Semiconductors -- The DR in Quantum Box (QB) of Heavily Doped (HD) Non-Parabolic Semiconductors -- The DR in doping superlattices of HD Non-Parabolic Semiconductors -- The DR in Accumulation and Inversion Layers of Non-Parabolic Semiconductors. 330 $aThis book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for graduate students and researchers. The book is written for post graduate students, researchers and engineers. 410 0$aSpringer Tracts in Modern Physics,$x0081-3869 ;$v265 606 $aSemiconductors 606 $aNanotechnology 606 $aMicrowaves 606 $aOptical engineering 606 $aNanoscale science 606 $aNanoscience 606 $aNanostructures 606 $aSolid state physics 606 $aSemiconductors$3https://scigraph.springernature.com/ontologies/product-market-codes/P25150 606 $aNanotechnology$3https://scigraph.springernature.com/ontologies/product-market-codes/Z14000 606 $aMicrowaves, RF and Optical Engineering$3https://scigraph.springernature.com/ontologies/product-market-codes/T24019 606 $aNanoscale Science and Technology$3https://scigraph.springernature.com/ontologies/product-market-codes/P25140 606 $aSolid State Physics$3https://scigraph.springernature.com/ontologies/product-market-codes/P25013 615 0$aSemiconductors. 615 0$aNanotechnology. 615 0$aMicrowaves. 615 0$aOptical engineering. 615 0$aNanoscale science. 615 0$aNanoscience. 615 0$aNanostructures. 615 0$aSolid state physics. 615 14$aSemiconductors. 615 24$aNanotechnology. 615 24$aMicrowaves, RF and Optical Engineering. 615 24$aNanoscale Science and Technology. 615 24$aSolid State Physics. 676 $a537.622 700 $aGhatak$b Kamakhya Prasad$4aut$4http://id.loc.gov/vocabulary/relators/aut$0524116 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910254605303321 996 $aDispersion Relations in Heavily-Doped Nanostructures$92534144 997 $aUNINA