LEADER 04116nam 22006495 450 001 9910254588603321 005 20200701082053.0 010 $a3-319-66607-X 024 7 $a10.1007/978-3-319-66607-5 035 $a(CKB)4100000000882497 035 $a(DE-He213)978-3-319-66607-5 035 $a(MiAaPQ)EBC5091996 035 $a(PPN)220126178 035 $a(EXLCZ)994100000000882497 100 $a20171005d2017 u| 0 101 0 $aeng 135 $aurnn|008mamaa 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aGrowth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets /$fby María Ángela Pampillón Arce 205 $a1st ed. 2017. 210 1$aCham :$cSpringer International Publishing :$cImprint: Springer,$d2017. 215 $a1 online resource (XXIII, 164 p. 116 illus., 6 illus. in color.) 225 1 $aSpringer Theses, Recognizing Outstanding Ph.D. Research,$x2190-5053 311 $a3-319-66606-1 320 $aIncludes bibliographical references at the end of each chapters. 327 $aIntroduction -- Fabrication Techniques -- Characterization Techniques -- Thermal Oxidation of Gd2o3 -- Plasma Oxidation of Gd2o3 and Sc2o3 -- Gadolinium Scandate -- Interface Scavenging -- Gd2o3 on Inp Substrates -- Conclusions and Future Work. 330 $aThis thesis describes the fabrication of metal-insulator-semiconductor (MIS) structures using very high permittivity dielectrics (based on rare earths) grown by high-pressure sputtering from metallic targets. It demonstrates the possibility of depositing high permittivity materials (GdScO3) by means of high pressure sputtering from metallic targets using in situ plasma oxidation on Si and indium phosphate (InP) substrates. The advantage of this system is the high working pressure, which causes the particles to undergo multiple collisions and become thermalized before reaching the substrate in a pure diffusion process, thus protecting the semiconductor surface from damage. This work presents a unique fabrication using metallic targets and involving a two-step deposition process: a thin metallic film is sputtered in an Ar atmosphere and this film is then plasma oxidized in situ. It also demonstrates the fabrication of GdScO3 on Si with a permittivity value above 30 from metallic Gd and Sc targets. Since co-sputtering was not possible, a nanolaminate of these materials was deposited and annealed. The electrical properties of these devices show that the material is highly interesting from a microelectronic integration standpoint. 410 0$aSpringer Theses, Recognizing Outstanding Ph.D. Research,$x2190-5053 606 $aSurfaces (Physics) 606 $aInterfaces (Physical sciences) 606 $aThin films 606 $aNanotechnology 606 $aElectronic circuits 606 $aSurface and Interface Science, Thin Films$3https://scigraph.springernature.com/ontologies/product-market-codes/P25160 606 $aNanotechnology$3https://scigraph.springernature.com/ontologies/product-market-codes/Z14000 606 $aElectronic Circuits and Devices$3https://scigraph.springernature.com/ontologies/product-market-codes/P31010 606 $aNanotechnology and Microengineering$3https://scigraph.springernature.com/ontologies/product-market-codes/T18000 615 0$aSurfaces (Physics). 615 0$aInterfaces (Physical sciences). 615 0$aThin films. 615 0$aNanotechnology. 615 0$aElectronic circuits. 615 14$aSurface and Interface Science, Thin Films. 615 24$aNanotechnology. 615 24$aElectronic Circuits and Devices. 615 24$aNanotechnology and Microengineering. 676 $a621.3815284 700 $aPampillón Arce$b María Ángela$4aut$4http://id.loc.gov/vocabulary/relators/aut$0996353 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910254588603321 996 $aGrowth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets$92283951 997 $aUNINA