LEADER 01464nam0 22003371i 450 001 UON00119903 005 20231205102712.795 100 $a20020107d1974 |0itac50 ba 101 $aita 102 $aIT 105 $a|||| ||||| 200 1 $aViaggio in Egitto e in Siria 1782-1785$fConstantin-Francois Volney$ga cura di Sergio Moravia 205 $aMilano : Longanesi$bc1974 210 $a520 p.$cill. ; 23 cm 215 $aTit. orig.: Voyage en Syrie et en Egypte 410 1$1001UON00051895$12001 $aˆI ‰cento viaggi$fCollezione diretta da Franco Marenco$v18 500 1$3UON00366974$aVoyage en Syrie et en Egypte$92855899 606 $aEgitto$xDescrizioni e viaggi$3UONC021000$2FI 606 $aSIRIA$xDescrizioni e viaggi$3UONC021752$2FI 620 $aIT$dMilano$3UONL000005 676 $a916.204$cDESCRIZIONI E VIAGGI DELL'EGITTO E SUDAN$v21 676 $a915.6904$cDESCRIZIONI E VIAGGI DELLA SIRIA$v21 700 1$aVolney$bConstantin-François : de Chasseboeuf$c comte$3UONV075701$01230242 702 1$aMoravia$bSergio$3UONV075712 712 $aLonganesi$3UONV246623$4650 801 $aIT$bSOL$c20250905$gRICA 899 $aSIBA - SISTEMA BIBLIOTECARIO DI ATENEO$2UONSI 912 $aUON00119903 950 $aSIBA - SISTEMA BIBLIOTECARIO DI ATENEO$dSI *** *** $eSI AA 24156 5 *** $sSmarrito 996 $aVoyage en Syrie et en Egypte$92855899 997 $aUNIOR LEADER 04730nam 22007095 450 001 9910254156003321 005 20200704033413.0 010 $a981-10-4334-5 024 7 $a10.1007/978-981-10-4334-5 035 $a(CKB)3710000001394103 035 $a(DE-He213)978-981-10-4334-5 035 $a(MiAaPQ)EBC4871089 035 $a(PPN)202989186 035 $a(EXLCZ)993710000001394103 100 $a20170602d2017 u| 0 101 0 $aeng 135 $aurnn|008mamaa 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aImpact of Ion Implantation on Quantum Dot Heterostructures and Devices /$fby Arjun Mandal, Subhananda Chakrabarti 205 $a1st ed. 2017. 210 1$aSingapore :$cSpringer Singapore :$cImprint: Springer,$d2017. 215 $a1 online resource (XXIII, 64 p. 53 illus., 32 illus. in color.) 311 $a981-10-4333-7 320 $aIncludes bibliographical references at the end of each chapters. 327 $aPreface -- Acknowledgement -- Contents -- List of Figures -- List of Tables -- Abbreviations -- Chapter 1: Introduction to Quantum Dots -- Chapter 2: Low energy ion implantation over single layer InAs/GaAs quantum dots -- Chapter 3: Optimizations for quaternary alloy (InAlGaAs) capped InAs/GaAs multilayer quantum dots -- Chapter 4: Effects of low energy light ion (H?) implantations on quaternary-alloy-capped InAs/GaAs quantum dot infrared photodetectors -- Chapter 5: Effects of low energy light ion (H?) implantation on quaternary-alloy-capped InGaAs/GaAs quantum dot infrared photodetectors. 330 $aThis book looks at the effects of ion implantation as an effective post-growth technique to improve the material properties, and ultimately, the device performance of In(Ga)As/GaAs quantum dot (QD) heterostructures. Over the past two decades, In(Ga)As/GaAs-based QD heterostructures have marked their superiority, particularly for application in lasers and photodetectors. Several in-situ and ex-situ techniques that improve material quality and device performance have already been reported. These techniques are necessary to maintain dot density and dot size uniformity in QD heterostructures and also to improve the material quality of heterostructures by removing defects from the system. While rapid thermal annealing, pulsed laser annealing and the hydrogen passivation technique have been popular as post-growth methods, ion implantation had not been explored largely as a post-growth method for improving the material properties of In(Ga)As/GaAs QD heterostructures. This work attempts to remedy this gap in the literature. The work also looks at introduction of a capping layer of quaternary alloy InAlGaAs over these In(Ga)As/GaAs QDs to achieve better QD characteristics. The contents of this volume will prove useful to researchers and professionals involved in the study of QDs and QD-based devices. 606 $aOptical materials 606 $aElectronics$xMaterials 606 $aElectronic circuits 606 $aLasers 606 $aPhotonics 606 $aSignal processing 606 $aImage processing 606 $aSpeech processing systems 606 $aOptical and Electronic Materials$3https://scigraph.springernature.com/ontologies/product-market-codes/Z12000 606 $aCircuits and Systems$3https://scigraph.springernature.com/ontologies/product-market-codes/T24068 606 $aElectronic Circuits and Devices$3https://scigraph.springernature.com/ontologies/product-market-codes/P31010 606 $aOptics, Lasers, Photonics, Optical Devices$3https://scigraph.springernature.com/ontologies/product-market-codes/P31030 606 $aSignal, Image and Speech Processing$3https://scigraph.springernature.com/ontologies/product-market-codes/T24051 615 0$aOptical materials. 615 0$aElectronics$xMaterials. 615 0$aElectronic circuits. 615 0$aLasers. 615 0$aPhotonics. 615 0$aSignal processing. 615 0$aImage processing. 615 0$aSpeech processing systems. 615 14$aOptical and Electronic Materials. 615 24$aCircuits and Systems. 615 24$aElectronic Circuits and Devices. 615 24$aOptics, Lasers, Photonics, Optical Devices. 615 24$aSignal, Image and Speech Processing. 676 $a620.11295 676 $a620.11297 700 $aMandal$b Arjun$4aut$4http://id.loc.gov/vocabulary/relators/aut$0767412 702 $aChakrabarti$b Subhananda$4aut$4http://id.loc.gov/vocabulary/relators/aut 906 $aBOOK 912 $a9910254156003321 996 $aImpact of Ion Implantation on Quantum Dot Heterostructures and Devices$92036113 997 $aUNINA