LEADER 04234nam 22006495 450 001 9910254053703321 005 20200629194311.0 010 $a3-319-43220-6 024 7 $a10.1007/978-3-319-43220-5 035 $a(CKB)3710000000862093 035 $a(DE-He213)978-3-319-43220-5 035 $a(MiAaPQ)EBC4691285 035 $a(PPN)195512278 035 $a(EXLCZ)993710000000862093 100 $a20160916d2016 u| 0 101 0 $aeng 135 $aurnn#008mamaa 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aDielectric Breakdown in Gigascale Electronics $eTime Dependent Failure Mechanisms /$fby Juan Pablo Borja, Toh-Ming Lu, Joel Plawsky 205 $a1st ed. 2016. 210 1$aCham :$cSpringer International Publishing :$cImprint: Springer,$d2016. 215 $a1 online resource (VIII, 105 p. 74 illus., 33 illus. in color.) 225 1 $aSpringerBriefs in Materials,$x2192-1091 311 $a3-319-43218-4 320 $aIncludes bibliographical references at the end of each chapters. 327 $aIntroduction -- General Theories -- Measurement Tools and Test Structures -- Experimental Techniques -- Breakdown Experiments -- Kinetics of Charge Carrier Confinement in Thin Dielectrics -- Theory of Dielectric Breakdown in Nanoporous Thin Films -- Dielectric Breakdown in Copper Interconnects -- Reconsidering Conventional Models. 330 $aThis book focuses on the experimental and theoretical aspects of the time-dependent breakdown of advanced dielectric films used in gigascale electronics. Coverage includes the most important failure mechanisms for thin low-k films, new and established experimental techniques, recent advances in the area of dielectric failure, and advanced simulations/models to resolve and predict dielectric breakdown, all of which are of considerable importance for engineers and scientists working on developing and integrating present and future chip architectures. The book is specifically designed to aid scientists in assessing the reliability and robustness of electronic systems employing low-k dielectric materials such as nano-porous films. Similarly, the models presented here will help to improve current methodologies for estimating the failure of gigascale electronics at device operating conditions from accelerated lab test conditions. Numerous graphs, tables, and illustrations are included to facilitate understanding of the topics. Readers will be able to understand dielectric breakdown in thin films along with the main failure modes and characterization techniques. In addition, they will gain expertise on conventional as well as new field acceleration test models for predicting long term dielectric degradation. 410 0$aSpringerBriefs in Materials,$x2192-1091 606 $aOptical materials 606 $aElectronics$xMaterials 606 $aNanotechnology 606 $aElectronic circuits 606 $aOptical and Electronic Materials$3https://scigraph.springernature.com/ontologies/product-market-codes/Z12000 606 $aNanotechnology and Microengineering$3https://scigraph.springernature.com/ontologies/product-market-codes/T18000 606 $aElectronic Circuits and Devices$3https://scigraph.springernature.com/ontologies/product-market-codes/P31010 606 $aNanotechnology$3https://scigraph.springernature.com/ontologies/product-market-codes/Z14000 615 0$aOptical materials. 615 0$aElectronics$xMaterials. 615 0$aNanotechnology. 615 0$aElectronic circuits. 615 14$aOptical and Electronic Materials. 615 24$aNanotechnology and Microengineering. 615 24$aElectronic Circuits and Devices. 615 24$aNanotechnology. 676 $a621.3817 700 $aBorja$b Juan Pablo$4aut$4http://id.loc.gov/vocabulary/relators/aut$01059898 702 $aLu$b Toh-Ming$4aut$4http://id.loc.gov/vocabulary/relators/aut 702 $aPlawsky$b Joel$4aut$4http://id.loc.gov/vocabulary/relators/aut 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910254053703321 996 $aDielectric Breakdown in Gigascale Electronics$92509395 997 $aUNINA