LEADER 03441nam  22006495  450 
001 9910254042903321
005 20200704175826.0
010   $a3-319-31572-2
024 7 $a10.1007/978-3-319-31572-0
035   $a(CKB)3710000000746190
035   $a(DE-He213)978-3-319-31572-0
035   $a(MiAaPQ)EBC4584909
035   $a(PPN)194515850
035   $a(EXLCZ)993710000000746190
100   $a20160704d2016      u|         0
101 0 $aeng
135   $aurnn|008mamaa
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aEmerging Resistive Switching Memories /$fby Jianyong Ouyang
205   $a1st ed. 2016.
210  1$aCham :$cSpringer International Publishing :$cImprint: Springer,$d2016.
215   $a1 online resource (VIII, 93 p. 73 illus., 41 illus. in color.) 
225 1 $aSpringerBriefs in Materials,$x2192-1091
311   $a3-319-31570-6 
320   $aIncludes bibliographical references at the end of each chapters.
327   $aIntroduction to history of memory devices and the present memory devices -- Introduction of resistive switches memory devices with nanoparticles -- Structure, fabrication and operation of devices with a triple-layer structure sandwiched between two electrode -- Structure, fabrication and operation of devices with a single layer structure sandwiched between two electrode -- Resistive switching devices exploiting the charge transfer between metal electrode and metal nanoparticles -- Mechanisms for resistive switches -- Application of the resistive switching devices with nanoparticles.
330   $aThis brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.
410  0$aSpringerBriefs in Materials,$x2192-1091
606   $aNanotechnology
606   $aElectronic circuits
606   $aElectronics
606   $aMicroelectronics
606   $aComputer memory systems
606   $aNanotechnology$3https://scigraph.springernature.com/ontologies/product-market-codes/Z14000
606   $aElectronic Circuits and Devices$3https://scigraph.springernature.com/ontologies/product-market-codes/P31010
606   $aElectronics and Microelectronics, Instrumentation$3https://scigraph.springernature.com/ontologies/product-market-codes/T24027
606   $aMemory Structures$3https://scigraph.springernature.com/ontologies/product-market-codes/I12034
615  0$aNanotechnology.
615  0$aElectronic circuits.
615  0$aElectronics.
615  0$aMicroelectronics.
615  0$aComputer memory systems.
615 14$aNanotechnology.
615 24$aElectronic Circuits and Devices.
615 24$aElectronics and Microelectronics, Instrumentation.
615 24$aMemory Structures.
676   $a621.39732
700   $aOuyang$b Jianyong$4aut$4http://id.loc.gov/vocabulary/relators/aut$01065406
801  0$bMiAaPQ
801  1$bMiAaPQ
801  2$bMiAaPQ
906   $aBOOK
912   $a9910254042903321
996   $aEmerging Resistive Switching Memories$92545268
997   $aUNINA