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010   $a3-319-46624-0
024 7 $a10.1007/978-3-319-46624-8
035   $a(CKB)3710000000961031
035   $a(DE-He213)978-3-319-46624-8
035   $a(MiAaPQ)EBC4747031
035   $a(PPN)19713856X
035   $a(EXLCZ)993710000000961031
100   $a20161122d2017      u|         0
101 0 $aeng
135   $aurnn#008mamaa
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aEnergy-Level Control at Hybrid Inorganic/Organic Semiconductor Interfaces /$fby Raphael Schlesinger
205   $a1st ed. 2017.
210  1$aCham :$cSpringer International Publishing :$cImprint: Springer,$d2017.
215   $a1 online resource (XVIII, 211 p. 88 illus., 52 illus. in color.)
225 1 $aSpringer Theses, Recognizing Outstanding Ph.D. Research,$x2190-5053
300   $a"Doctoral Thesis accepted by the Humboldt University of Berlin, Germany."
311   $a3-319-46623-2 
320   $aIncludes bibliographical references at the end of each chapters.
327   $aIntroduction -- Fundamentals -- Theory of Experimental Methods -- Methodology and Experimental Setups -- Results and Discussion -- Conclusion. .
330   $aThis work investigates the energy-level alignment of hybrid inorganic/organic systems (HIOS) comprising ZnO as the major inorganic semiconductor. In addition to offering essential insights, the thesis demonstrates HIOS energy-level alignment tuning within an unprecedented energy range. (Sub)monolayers of organic molecular donors and acceptors are introduced as an interlayer to modify HIOS interface-energy levels. By studying numerous HIOS with varying properties, the author derives generally valid systematic insights into the fundamental processes at work. In addition to molecular pinning levels, he identifies adsorption-induced band bending and gap-state density of states as playing a crucial role in the interlayer-modified energy-level alignment, thus laying the foundation for rationally controlling HIOS interface electronic properties. The thesis also presents quantitative descriptions of many aspects of the processes, opening the door for innovative HIOS interfaces and for future applications of ZnO in electronic devices. .
410  0$aSpringer Theses, Recognizing Outstanding Ph.D. Research,$x2190-5053
606   $aSurfaces (Physics)
606   $aInterfaces (Physical sciences)
606   $aThin films
606   $aOptical materials
606   $aElectronic materials
606   $aSpectroscopy
606   $aMicroscopy
606   $aSemiconductors
606   $aSurface and Interface Science, Thin Films$3https://scigraph.springernature.com/ontologies/product-market-codes/P25160
606   $aOptical and Electronic Materials$3https://scigraph.springernature.com/ontologies/product-market-codes/Z12000
606   $aSpectroscopy and Microscopy$3https://scigraph.springernature.com/ontologies/product-market-codes/P31090
606   $aSemiconductors$3https://scigraph.springernature.com/ontologies/product-market-codes/P25150
615  0$aSurfaces (Physics).
615  0$aInterfaces (Physical sciences).
615  0$aThin films.
615  0$aOptical materials.
615  0$aElectronic materials.
615  0$aSpectroscopy.
615  0$aMicroscopy.
615  0$aSemiconductors.
615 14$aSurface and Interface Science, Thin Films.
615 24$aOptical and Electronic Materials.
615 24$aSpectroscopy and Microscopy.
615 24$aSemiconductors.
676   $a537.622
700   $aSchlesinger$b Raphael$4aut$4http://id.loc.gov/vocabulary/relators/aut$0819659
801  0$bMiAaPQ
801  1$bMiAaPQ
801  2$bMiAaPQ
906   $aBOOK
912   $a9910153303403321
996   $aEnergy-Level Control at Hybrid Inorganic$91826565
997   $aUNINA