LEADER 03517nam 2200493 450 001 9910151742203321 005 20221206093753.0 010 $a1-119-07935-7 010 $a1-119-07941-1 024 7 $a10.1002/9781119079415 035 $a(CKB)4330000000008385 035 $a(MiAaPQ)EBC4745623 035 $a(CaBNVSL)mat07794169 035 $a(IDAMS)0b000064859d933b 035 $a(IEEE)7794169 035 $a(EXLCZ)994330000000008385 100 $a20170118d2017 uy 101 0 $aeng 135 $aurcnu|||||||| 181 $2rdacontent 182 $2rdamedia 183 $2rdacarrier 200 00$aIntroduction to magnetic random-access memory /$fedited by Bernard Dieny, Ronald B. Goldfarb, Kyung-Jin Lee 210 1$aHoboken, New Jersey :$cWiley-IEEE Press,$d[2017] 210 2$a[Piscataqay, New Jersey] :$cIEEE Xplore,$d[2017] 215 $a1 online resource (263 pages) $cillustrations 225 0 $aIEEE magnetics 311 $a1-119-00974-X 320 $aIncludes bibliographical references and index. 327 $aBasic Spintronic Transport Phenomena / Nicolas Locatelli, Vincent Cros -- Magnetic Properties of Materials for MRAM / Shinji Yuasa -- Micromagnetism Applied to Magnetic Nanostructures / Liliana D Buda-Prejbeanu -- Magnetization Dynamics / William E Bailey -- Magnetic Random-Access Memory / Bernard Dieny, I Lucian Prejbeanu -- Magnetic Back-End Technology / Michael C Gaidis -- Beyond MRAM: Nonvolatile Logic-in-Memory VLSI / Takahiro Hanyu, Tetsuo Endoh, Shoji Ikeda, Tadahiko Sugibayashi, Naoki Kasai, Daisuke Suzuki, Masanori Natsui, Hiroki Koike, Hideo Ohno -- Appendix: Units for Magnetic Properties. 330 $aMagnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Although toggle-MRAM is currently a commercial product, it is clear that future developments in MRAM will be based on spin-transfer torque, which makes use of electrons' spin angular momentum instead of their charge. MRAM will require an amalgamation of magnetics and microelectronics technologies. However, researchers and developers in magnetics and in microelectronics attend different technical conferences, publish in different journals, use different tools, and have different backgrounds in condensed-matter physics, electrical engineering, and materials science. This book is an introduction to MRAM for microelectronics engineers written by specialists in magnetic materials and devices. It presents the basic phenomena involved in MRAM, the materials and film stacks being used, the basic principles of the various types of MRAM (toggle and spin-transfer torque; magnetized in-plane or perpendicular-to-plane), the back-end magnetic technology, and recent developments toward logic-in-memory architectures. It helps bridge the cultural gap between the microelectronics and magnetics communities. 606 $aMagnetic memory (Computers) 615 0$aMagnetic memory (Computers) 676 $a004.5/3 702 $aDieny$b B$g(Bernard), 702 $aGoldfarb$b Ronald Barry 702 $aLee$b Kyung-Jin 801 0$bCaBNVSL 801 1$bCaBNVSL 801 2$bCaBNVSL 906 $aBOOK 912 $a9910151742203321 996 $aIntroduction to magnetic random-access memory$91906273 997 $aUNINA