LEADER 05521nam 2200661 a 450 001 9910146134903321 005 20170816120734.0 010 $a1-282-12352-1 010 $a9786612123528 010 $a0-470-74438-3 010 $a0-470-74439-1 035 $a(CKB)1000000000719720 035 $a(EBL)427969 035 $a(OCoLC)437111534 035 $a(SSID)ssj0000354687 035 $a(PQKBManifestationID)11261314 035 $a(PQKBTitleCode)TC0000354687 035 $a(PQKBWorkID)10315827 035 $a(PQKB)11555682 035 $a(MiAaPQ)EBC427969 035 $a(EXLCZ)991000000000719720 100 $a20081103d2009 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aProperties of semiconductor alloys$b[electronic resource] $egroup-IV, III-V and II-VI semiconductors /$fSadao Adachi 210 $aChichester, West Sussex, U.K. ;$aHoboken, N.J. $cWiley$d2009 215 $a1 online resource (424 p.) 225 1 $aWiley series in materials for electronic & optoelectronic applications 300 $aDescription based upon print version of record. 311 $a0-470-74369-7 320 $aIncludes bibliographical references and index. 327 $aProperties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors; Contents; Series Preface; Preface; Abbreviations and Acronyms; Introductory Remarks; A.1 AN ALLOY AND A COMPOUND; A.2 GRIMM-SOMMERFELD RULE; A.3 AN INTERPOLATION SCHEME; REFERENCES; 1 Structural Properties; 1.1 IONICITY; 1.2 ELEMENTAL ISOTOPIC ABUNDANCE AND MOLECULAR WEIGHT; 1.3 CRYSTAL STRUCTURE; 1.3.1 Random Alloy; 1.3.2 Spontaneous Ordering; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy; (c) II-VI semiconductor alloy; 1.4 LATTICE CONSTANT AND RELATED PARAMETERS 327 $a1.4.1 CuAu Alloy: Ordered and Disordered States1.4.2 Non-alloyed Semiconductor; 1.4.3 Semiconductor Alloy; (a) Group-IV semiconductor; (b) III-V semiconductor; (c) II-VI semiconductor; 1.5 COHERENT EPITAXY AND STRAIN PROBLEM; 1.5.1 Bilayer Model; 1.5.2 Elastic Strain and Lattice Deformation; 1.5.3 Critical Thickness; 1.6 STRUCTURAL PHASE TRANSITION; 1.7 CLEAVAGE PLANE; 1.7.1 Cleavage; 1.7.2 Surface Energy; REFERENCES; 2 Thermal Properties; 2.1 MELTING POINT AND RELATED PARAMETERS; 2.1.1 Phase Diagram; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy 327 $a(c) II-VI semiconductor alloy2.1.2 Melting Point; 2.2 SPECIFIC HEAT; 2.2.1 Group-IV Semiconductor Alloy; 2.2.2 III-V Semiconductor Alloy; 2.2.3 II-VI Semiconductor Alloy; 2.3 DEBYE TEMPERATURE; 2.3.1 General Considerations; 2.3.2 Group-IV Semiconductor Alloy; 2.3.3 III-V Semiconductor Alloy; 2.3.4 II-VI Semiconductor Alloy; 2.4 THERMAL EXPANSION COEFFICIENT; 2.4.1 Group-IV Semiconductor Alloy; 2.4.2 III-V Semiconductor Alloy; 2.4.3 II-VI Semiconductor Alloy; 2.5 THERMAL CONDUCTIVITY AND DIFFUSIVITY; 2.5.1 Thermal Conductivity; (a) General considerations; (b) Group-IV semiconductor alloy 327 $a(c) III-V semiconductor alloy(d) II-VI semiconductor alloy; 2.5.2 Thermal Diffusivity; (a) General considerations; (b) Alloy value; REFERENCES; 3 Elastic Properties; 3.1 ELASTIC CONSTANT; 3.1.1 General Considerations; 3.1.2 Room-temperature Value; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy; (c) II-VI semiconductor alloy; 3.1.3 External Perturbation Effect; (a) Temperature effect; (b) Pressure effect; 3.2 THIRD-ORDER ELASTIC CONSTANT; 3.3 YOUNG'S MODULUS, POISSON'S RATIO AND SIMILAR PROPERTIES; 3.3.1 Group-IV Semiconductor Alloy; 3.3.2 III-V Semiconductor Alloy 327 $a3.3.3 II-VI Semiconductor Alloy3.4 MICROHARDNESS; 3.4.1 Group-IV Semiconductor Alloy; 3.4.2 III-V Semiconductor Alloy; 3.4.3 II-VI Semiconductor Alloy; 3.5 SOUND VELOCITY; REFERENCES; 4 Lattice Dynamic Properties; 4.1 PHONON DISPERSION RELATIONSHIPS; 4.2 PHONON FREQUENCY; 4.2.1 General Considerations; 4.2.2 Room-temperature Value; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy; (c) II-VI semiconductor alloy; 4.2.3 External Perturbation Effect; (a) Group-IV semiconductor alloy; (b) III-V semiconductor alloy; (c) II-VI semiconductor alloy; 4.3 MODE GRU?NEISEN PARAMETER 327 $a4.3.1 Phonon Deformation Potential 330 $aThe main purpose of this book is to provide a comprehensive treatment of the materials aspects of group-IV, III-V and II-VI semiconductor alloys used in various electronic and optoelectronic devices. The topics covered in this book include the structural, thermal, mechanical, lattice vibronic, electronic, optical and carrier transport properties of such semiconductor alloys. The book reviews not only commonly known alloys (SiGe, AlGaAs, GaInPAs, and ZnCdTe) but also new alloys, such as dilute-carbon alloys (CSiGe, CSiSn, etc.), III-N alloys, dilute-nitride alloys (GaNAs and GaInNAs) and Mg- or 410 0$aWiley series in materials for electronic and optoelectronic applications. 606 $aSemiconductors$xMaterials 606 $aSemiconductors$xAnalysis 606 $aSilicon alloys 608 $aElectronic books. 615 0$aSemiconductors$xMaterials. 615 0$aSemiconductors$xAnalysis. 615 0$aSilicon alloys. 676 $a621.3815/2 700 $aAdachi$b Sadao$f1950-$0869791 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910146134903321 996 $aProperties of semiconductor alloys$91996106 997 $aUNINA