LEADER 05363nam 22006374a 450 001 9910145753103321 005 20230617023712.0 010 $a1-280-27506-5 010 $a9786610275069 010 $a0-470-02069-5 010 $a0-470-02071-7 035 $a(CKB)1000000000018880 035 $a(EBL)210575 035 $a(OCoLC)56748842 035 $a(SSID)ssj0000254890 035 $a(PQKBManifestationID)11213139 035 $a(PQKBTitleCode)TC0000254890 035 $a(PQKBWorkID)10211732 035 $a(PQKB)11452313 035 $a(MiAaPQ)EBC210575 035 $a(Au-PeEL)EBL210575 035 $a(CaPaEBR)ebr10113974 035 $a(CaONFJC)MIL27506 035 $a(EXLCZ)991000000000018880 100 $a20040520d2004 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aSystem integration$b[electronic resource] $efrom transistor design to large scale integrated circuits /$fKurt Hoffmann 210 $aChichester, West Sussex, England ;$aHoboken, NJ $cJohn Wiley & Sons$dc2004 215 $a1 online resource (512 p.) 300 $aDescription based upon print version of record. 311 $a0-470-85407-3 320 $aIncludes bibliographical references and index. 327 $aSystem Integration; Contents; Preface; Acknowledgments; Physical Constants and Conversion Factors; Symbols; 1 Semiconductor Physics; 1.1 Band Theory of Solids; 1.2 Doped Semiconductor; 1.3 Semiconductor in Equilibrium; 1.3.1 Fermi-Dirac Distribution Function; 1.3.2 Carrier Concentration at Equilibrium; 1.3.3 Density Product at Equilibrium; 1.3.4 Relationship between Energy, Voltage, and Electrical Field; 1.4 Charge Transport; 1.4.1 Drift Velocity; 1.4.2 Drift Current; 1.4.3 Diffusion Current; 1.4.4 Continuity Equation; 1.5 Non-Equilibrium Conditions; Problems; References; Further Reading 327 $a2 pn-Junction2.1 Inhomogeneously Doped n-type Semiconductor; 2.2 pn-Junction at Equilibrium; 2.3 Biased pn-Junction; 2.3.1 Density Product under Non-Equilibrium Conditions; 2.3.2 Current-Voltage Relationship; 2.3.3 Deviation from the Current-Voltage Relationship; 2.3.4 Voltage Reference Point; 2.4 Capacitance Characteristic; 2.4.1 Depletion Capacitance; 2.4.2 Diffusion Capacitance; 2.5 Switching Characteristic; 2.6 Junction Breakdown; 2.7 Modeling the pn-Junction; 2.7.1 Diode Model for CAD Applications; 2.7.2 Diode Model for Static Calculations; 2.7.3 Diode Model for Small-Signal Calculations 327 $aProblemsReferences; 3 Bipolar Transistor; 3.1 Bipolar Technologies; 3.2 Transistor Operation; 3.2.1 Current-Voltage Relationship; 3.2.2 Transistor under Reverse Biased Condition; 3.2.3 Voltage Saturation; 3.2.4 Temperature Behavior; 3.2.5 Breakdown Behavior; 3.3 Second-Order Effects; 3.3.1 High Current Effects; 3.3.2 Base-Width Modulation; 3.3.3 Current Crowding; 3.4 Alternative Transistor Structures; 3.5 Modeling the Bipolar Transistor; 3.5.1 Transistor Model for CAD Applications; 3.5.2 Transistor Model for Static Calculations; 3.5.3 Transistor Model for Small-Signal Calculations 327 $a3.5.4 Transit Time DeterminationProblems; References; Further Reading; 4 MOS Transistor; 4.1 CMOS Technology; 4.2 The MOS Structure; 4.2.1 Characteristic of the MOS Structure; 4.2.2 Capacitance Behavior of the MOS Structure; 4.2.3 Flat-Band Voltage; 4.3 Equations of the MOS Structure; 4.3.1 Charge Equations of the MOS Structure; 4.3.2 Surface Voltage at Strong Inversion; 4.3.3 Threshold Voltage and Body Effect; 4.4 MOS Transistor; 4.4.1 Current-Voltage Characteristic at Strong Inversion; 4.4.2 Improved Transistor Equation; 4.4.3 Current-Voltage Characteristic at Weak Inversion 327 $a4.4.4 Temperature Behavior4.5 Second-Order Effects; 4.5.1 Mobility Degradation; 4.5.2 Channel Length Modulation; 4.5.3 Short Channel Effects; 4.5.4 Hot Electrons; 4.5.5 Gate-Induced Drain Leakage; 4.5.6 Breakdown Behavior; 4.5.7 Latch-up Effect; 4.6 Power Devices; 4.7 Modeling of the MOS Transistor; 4.7.1 Transistor Model for CAD Applications; 4.7.2 Transistor Model for Static and Dynamic Calculations; 4.7.3 Transistor Model for Small-Signal Calculations; Problems; Appendix A Current-Voltage Equation of the MOS Transistor under Weak Inversion Condition; References; Further Reading 327 $a5 Basic Digital CMOS Circuits 330 $aThe development of large-scale integrated systems on a chip has had a dramatic effect on circuit design methodology. Recent years have seen an escalation of interest in systems level integration (system-on-a-chip) and the development of low power, high chip density circuits and systems. Kurt Hoffmann sets out to address a wide range of issues relating to the design and integration of integrated circuit components and provides readers with the methodology by which simple equations for the estimation of transistor geometries and circuit behaviour can be deduced. The broad coverage of this uniq 606 $aSystems on a chip 606 $aIntegrated circuits 615 0$aSystems on a chip. 615 0$aIntegrated circuits. 676 $a621.3815 700 $aHoffmann$b Kurt$f1951-$0926857 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910145753103321 996 $aSystem integration$92082092 997 $aUNINA