LEADER 05369nam 2200661 a 450 001 9910145695203321 005 20170815112747.0 010 $a1-281-32245-8 010 $a9786611322458 010 $a0-470-75181-9 010 $a0-470-75182-7 035 $a(CKB)1000000000414878 035 $a(EBL)351354 035 $a(OCoLC)476171860 035 $a(SSID)ssj0000224583 035 $a(PQKBManifestationID)11910944 035 $a(PQKBTitleCode)TC0000224583 035 $a(PQKBWorkID)10210608 035 $a(PQKB)11398961 035 $a(MiAaPQ)EBC351354 035 $a(EXLCZ)991000000000414878 100 $a20071109d2008 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aPorous silicon carbide and gallium nitride$b[electronic resource] $eepitaxy, catalysis, and biotechnology applications /$fRandall M. Feenstra, Colin E.C. Wood 210 $aChichester, England ;$aHoboken, NJ $cJohn Wiley & Sons$dc2008 215 $a1 online resource (340 p.) 300 $aDescription based upon print version of record. 311 $a0-470-51752-2 320 $aIncludes bibliographical references (p. 308-310) and index. 327 $aPorous Silicon Carbide and Gallium Nitride; Contents; Preface; 1 Porous SiC Preparation, Characterization and Morphology; 1.1 Introduction; 1.2 Triangular Porous Morphology in n-type 4H-SiC; 1.2.1 Crystal Anodization; 1.2.2 Description of the Porous Structure; 1.2.3 Model of the Morphology; 1.3 Nano-columnar Pore Formation in 6H-SiC; 1.3.1 Experimental; 1.3.2 Results; 1.3.3 Discussion; 1.4 Summary; Acknowledgements; References; 2 Processing Porous SiC: Diffusion, Oxidation, Contact Formation; 2.1 Introduction; 2.2 Formation of Porous Layer; 2.3 Diffusion in Porous SiC; 2.4 Oxidation 327 $a2.5 Contacts to Porous SiCAcknowledgements; References; 3 Growth of SiC on Porous SiC Buffer Layers; 3.1 Introduction; 3.2 SiC CVD Growth; 3.3 Growth of 3C-SiC on Porous Si via Cold-Wall Epitaxy; 3.3.1 Growth on Porous Si Substrates; 3.3.2 Growth on Stabilized Porous Si Substrates; 3.4 Growth of 3C-SiC on Porous 3C-SiC; 3.4.1 Growth in LPCVD Cold-wall Reactor; 3.5 Growth of 4H-SiC on Porous 4H-SiC; 3.6 Conclusion; Acknowledgements; References; 4 Preparation and Properties of Porous GaN Fabricated by Metal-Assisted Electroless Etching; 4.1 Introduction 327 $a4.2 Creation of Porous GaN by Electroless Etching4.3 Morphology Characterization; 4.3.1 Porous GaN Derived from Unintentionally Doped Films; 4.3.2 Transmission Electron Microscopy (TEM) Characterization; 4.4 Luminescence of Porous GaN; 4.4.1 Cathodoluminescence (CL) of Porous GaN; 4.4.2 Photoluminescence (PL) of Porous GaN; 4.5 Raman Spectroscopy of Porous GaN; 4.5.1 Characteristics of Raman scattering in GaN; 4.5.2 Raman Spectra of Porous GaN Excited Below Band Gap; 4.6 Summary and Conclusions; Acknowledgements; References; 5 Growth of GaN on Porous SiC by Molecular Beam Epitaxy 327 $a5.1 Introduction5.2 Morphology and Preparation of Porous SiC Substrates; 5.2.1 Porous Substrates; 5.2.2 Hydrogen Etching; 5.3 MBE Growth of GaN on Porous SiC Substrates; 5.3.1 Experimental Details; 5.3.2 Film Structure; 5.3.3 Film Strain; 5.4 Summary; Acknowledgements; References; 6 GaN Lateral Epitaxy Growth Using Porous SiNx, TiNx and SiC; 6.1 Introduction; 6.2 Epitaxy of GaN on Porous SiNx Network; 6.2.1 Three-step Growth Method; 6.2.2 Structural and Optical Characterization; 6.2.3 Schottky Diodes (SDs) on Undoped GaN Templates; 6.2.4 Deep Level Transition Spectrum 327 $a6.3 Epitaxial Lateral Overgrowth of GaN on Porous TiN6.3.1 Formation of Porous TiN; 6.3.2 Growth of GaN on Porous TiN; 6.3.3 Characterization by XRD; 6.3.4 Characterization by TEM; 6.3.5 Characterization by PL; 6.4 Growth of GaN on Porous SiC; 6.4.1 Fabrication of Porous SiC; 6.4.2 GaN Growth on Hydrogen Polished Porous SiC; 6.4.3 GaN Growth on Chemical Mechanical Polished Porous SiC; Acknowledgements; References; 7 HVPE Growth of GaN on Porous SiC Substrates; 7.1 Introduction; 7.2 PSC Substrate Fabrication and Properties; 7.2.1 Formation of Various Types of SPSC Structure; 7.2.2 Dense Layer 327 $a7.2.3 Monitoring of Anodization Process 330 $aPorous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins with an overview of porous wide-band-gap technology, and describes the underlying scientific basis for each application area. Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more 606 $aSilicon carbide 606 $aGallium nitride 606 $aSemiconductors 608 $aElectronic books. 615 0$aSilicon carbide. 615 0$aGallium nitride. 615 0$aSemiconductors. 676 $a621.3815/2 676 $a621.38152 700 $aFeenstra$b Randall M$0947049 701 $aWood$b Colin E. C$027206 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910145695203321 996 $aPorous silicon carbide and gallium nitride$92139735 997 $aUNINA