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200 10$a2006 International Workshop on Nano CMOS : proceedings : Jan. 30, 31, Feb. 1, 2006, TORAY Sougou Kensyu Center, 21-9 Suehiro, Mishima, Shizuoka, 411-0032 Japan
210 31$a[Place of publication not identified]$cIEEE Electron Devices Society$d2006
300   $aBibliographic Level Mode of Issuance: Monograph
311   $a1-4244-0603-X 
606   $aMetal oxide semiconductors, Complementary$xDesign and construction$vCongresses
606   $aNanoelectronics$vCongresses
606   $aElectrical & Computer Engineering$2HILCC
606   $aEngineering & Applied Sciences$2HILCC
606   $aElectrical Engineering$2HILCC
615  0$aMetal oxide semiconductors, Complementary$xDesign and construction
615  0$aNanoelectronics
615  7$aElectrical & Computer Engineering
615  7$aEngineering & Applied Sciences
615  7$aElectrical Engineering
676   $a621.39/5
712 12$aInternational Workshop on Nano CMOS
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996   $a2006 International Workshop on Nano CMOS : proceedings : Jan. 30, 31, Feb. 1, 2006, TORAY Sougou Kensyu Center, 21-9 Suehiro, Mishima, Shizuoka, 411-0032 Japan$92514204
997   $aUNINA