LEADER 05299nam 2200625 a 450 001 9910145424903321 005 20170815112656.0 010 $a1-281-31816-7 010 $a9786611318161 010 $a0-470-51617-8 010 $a0-470-51616-X 035 $a(CKB)1000000000402600 035 $a(EBL)351244 035 $a(OCoLC)437218528 035 $a(SSID)ssj0000189511 035 $a(PQKBManifestationID)11173130 035 $a(PQKBTitleCode)TC0000189511 035 $a(PQKBWorkID)10156684 035 $a(PQKB)10812975 035 $a(MiAaPQ)EBC351244 035 $a(EXLCZ)991000000000402600 100 $a20071015d2007 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aLatchup$b[electronic resource] /$fSteven H. Voldman 210 $aChichester, West Sussex, England ;$aHoboken, NJ $cJohn Wiley$dc2007 215 $a1 online resource (474 p.) 300 $aDescription based upon print version of record. 311 $a0-470-01642-6 320 $aIncludes bibliographical references and index. 327 $aLatchup; Contents; About the Author; Preface; Acknowledgements; 1 CMOS Latchup; 1.1 CMOS LATCHUP; 1.1.1 CMOS Latchup-What is Latchup?; 1.1.2 CMOS Latchup-Why is Latchup Still an Issue ?; 1.1.3 Early CMOS Latchup History; 1.2 FUNDAMENTAL CONCEPTS OF LATCHUP DESIGN PRACTICE; 1.3 BUILDING A CMOS LATCHUP STRATEGY; 1.3.1 Building a CMOS Business Strategy - 18 Steps in Building a CMOS Latchup Business Strategy; 1.3.2 Building a CMOS Latchup Technology Strategy - 18 Steps in Building a CMOS Latchup Technology Strategy; 1.4 CMOS LATCHUP TECHNOLOGY MIGRATION STRATEGY 327 $a1.5 KEY METRICS OF LATCHUP DESIGN PRACTICE1.6 CMOS LATCHUP TECHNOLOGY TRENDS AND SCALING; 1.7 KEY DEVELOPMENTS; 1.7.1 Key Innovations; 1.7.2 Key Contributions; 1.7.3 Key Patents; 1.8 LATCHUP FAILURE MECHANISMS; 1.9 CMOS LATCHUP EVENTS; 1.9.1 Power-Up Sequence Initiated Latchup; 1.9.2 Input Pin Overshoot and Power-Up Sequence Initiated Latchup; 1.9.3 Input Pin Undershoot and Power-Up Sequence Initiated Latchup; 1.9.4 Multiple Power Supply Power-Up Sequence Initiated Latchup; 1.9.5 Power Supply Overshoot Initiated Latchup; 1.9.6 Power Supply Undershoot Initiated Latchup 327 $a1.9.7 Power Supply (Ground Rail) Undershoot Initiated Latchup1.10 ELECTROSTATIC DISCHARGE SOURCES; 1.10.1 Human Body Model ESD Event; 1.10.2 Machine Model ESD Event; 1.10.3 Cable Discharge Event Source; 1.11 SINGLE EVENT LATCHUP; 1.11.1 High-Energy Photon Emissions; 1.11.2 Alpha Particle Ionizing Source; 1.11.3 Cosmic Ray Source; 1.11.4 Heavy Ion Source; 1.12 SUMMARY AND CLOSING COMMENTS; PROBLEMS; REFERENCES; 2 Bipolar Transistors; 2.1 THE BIPOLAR TRANSISTOR AND CMOS LATCHUP; 2.1.1 Fundamental Equations of Semiconductors and the Drift-Diffusion Current Constitutive Relationships 327 $a2.1.2 Diode Forward Bias Conditions2.1.3 Diode Forward Bias Conditions and High-level Injection; 2.2 BIPOLAR TRANSISTOR; 2.2.1 Bipolar Current Gain; 2.2.2 Bipolar Collector-to-Emitter Transport Factor; 2.2.3 Bipolar Current Characteristics; 2.2.4 Bipolar Model Gummel Plot; 2.2.5 Bipolar Current Model-Ebers-Moll Model; 2.2.6 Bipolar Transistor Base Defect; 2.2.7 Bipolar Transistor Emitter Defect; 2.2.8 Bipolar Base Current - Base Defect and Emitter Defect Relation to Bipolar Current Gain; 2.3 RECOMBINATION MECHANISMS; 2.3.1 Shockley-Read-Hall (SRH) Generation-Recombination Model 327 $a2.3.2 Auger Recombination Model2.3.3 Surface Recombination Mechanisms; 2.3.4 Surface Recombination Velocity; 2.3.5 Recombination Mechanisms and Neutron Irradiation; 2.3.6 Recombination Mechanisms and Gold Recombination Centers; 2.4 PHOTON CURRENTS IN METALLURGICAL JUNCTIONS; 2.5 AVALANCHE BREAKDOWN; 2.5.1 Bipolar Transistor Breakdown; 2.5.2 MOSFET Avalanche Breakdown; 2.6 VERTICAL BIPOLAR TRANSISTOR MODEL; 2.7 LATERAL BIPOLAR TRANSISTOR MODELS; 2.7.1 Lindmayer-Schneider Model; 2.7.2 Bipolar Current Gain with Lateral and Vertical Contributions 327 $a2.7.3 Lateral Bipolar Transistor Models - Nonfield-Assisted 330 $aInterest in latchup is being renewed with the evolution of complimentary metal-oxide semiconductor (CMOS) technology, metal-oxide-semiconductor field-effect transistor (MOSFET) scaling, and high-level system-on-chip (SOC) integration. Clear methodologies that grant protection from latchup, with insight into the physics, technology and circuit issues involved, are in increasing demand. This book describes CMOS and BiCMOS semiconductor technology and their sensitivity to present day latchup phenomena, from basic over-voltage and over-current conditions, single event latchup (SEL) and cabl 606 $aMetal oxide semiconductors, Complementary$xDefects 606 $aMetal oxide semiconductors, Complementary$xReliability 608 $aElectronic books. 615 0$aMetal oxide semiconductors, Complementary$xDefects. 615 0$aMetal oxide semiconductors, Complementary$xReliability. 676 $a621.3815/2 676 $a621.38152 700 $aVoldman$b Steven H$0872423 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910145424903321 996 $aLatchup$92221365 997 $aUNINA LEADER 00984nam a2200229 i 4500 001 991001922629707536 008 121213s2012 it a b 001 0 ita d 035 $ab1409244x-39ule_inst 040 $aDip.to Matematica e Fisica$beng 084 $aAMS 15A57 100 1 $aComi, Enrica$0477957 245 10$aTeoria stabile della popolazione :$bil modello discreto matriciale. Tesi di laurea /$claureanda Enrica Comi ; relatrice Eliana Francot 260 $aLecce :$bUniversità del Salento. Facoltà di Scienze MM. FF. NN. Corso di Laurea in Matematica,$ca.a. 2011-12 300 $a35 p. ;$c30 cm 650 4$aBasic linear algebra 700 1 $aFrancot, Eliana 907 $a.b1409244x$b02-04-14$c13-12-12 912 $a991001922629707536 945 $aLE013 TES 2011/12 COM1$g1$i2013000218670$lle013$og$pE15.00$q-$rn$so $t1$u0$v0$w0$x0$y.i15470209$z14-12-12 996 $aTeoria stabile della popolazione$9265705 997 $aUNISALENTO 998 $ale013$b13-12-12$cm$da $e-$fita$git $h0$i0 LEADER 01231nam a22002891i 4500 001 991000330629707536 005 20230509110334.0 008 040920s1996 it 001 0 ita 020 $a9788814060502 035 $ab13205912-39ule_inst 035 $aARCHE-115215 040 $aSet. Economia 082 04$a368.0068 100 1 $aCandiotto, Roberto$0116583 245 12$aL'area strategica "aziende" nelle imprese di assicurazione /$cRoberto Candiotto 260 $aMilano :$bGiuffrè,$c1996 300 $aXI, 164 p. ;$c24 cm 490 1 $aUniversità degli studi di Torino, Istituto di ragioneria ed economia aziendale. Serie 2 ;$v20 650 4$aAziende$xRischi$xAssicurazioni 650 4$aCompagnie di assicurazione$xGestione 907 $a.b13205912$b13-09-19$c23-09-04 912 $a991000330629707536 945 $aLE025 ECO 368 CAN01.01$g1$i2025000168718$lle025$nCatalogato 2019$o-$pE0.00$q-$rl$s-$t0$u1$v0$w1$x0$y.i13860896$z23-09-04 945 $aLE025 LIB B 569 [smarrito]$g1$i2025000188730$lle025$nC. 2$o-$pE0.00$q-$rl$sm$t0$u0$v0$w0$x0$y.i13860902$z23-09-04 996 $aArea strategica "Aziende" nelle imprese di assicurazione$9415372 997 $aUNISALENTO 998 $ale025$b23-09-04$cm$da$e-$fita$git$h2$i2