LEADER 05492nam 2200649Ia 450 001 9910144685403321 005 20170810195526.0 010 $a1-283-86964-0 010 $a3-527-62345-0 010 $a3-527-62344-2 035 $a(CKB)1000000000687933 035 $a(EBL)700862 035 $a(OCoLC)817918373 035 $a(SSID)ssj0000354080 035 $a(PQKBManifestationID)11249818 035 $a(PQKBTitleCode)TC0000354080 035 $a(PQKBWorkID)10302269 035 $a(PQKB)10074419 035 $a(MiAaPQ)EBC700862 035 $a(EXLCZ)991000000000687933 100 $a20080820d2008 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aCrystal growth technology$b[electronic resource] $efrom fundamentals and simulation to large-scale production /$fHans J. Scheel and Peter Capper 210 $aWeinheim $cWiley-VCH$dc2008 215 $a1 online resource (523 p.) 300 $aDescription based upon print version of record. 311 $a3-527-31762-7 320 $aIncludes bibliographical references and index. 327 $aCrystal Growth Technology; Contents; Preface; List of Contributors; Part I General Aspects of Crystal Growth Technology; 1 Phase Diagrams for Crystal Growth; 1.1 Introduction; 1.2 Thermodynamics and Phase Diagrams; 1.3 Phase Diagrams vs. Crystal Growth from Liquid Phases; 1.4 Conclusions; References; 2 Fundamentals of Equilibrium Thermodynamics of Crystal Growth; 2.1 Introduction; 2.2 Recapitulation of Some Basic Concepts; 2.3 Relationships Between Thermodynamics and Kinetics; 2.4 Thermodynamics of Melt Growth; 2.5 Thermodynamics of Solution Growth 327 $a2.6 Thermodynamics of Crystal Growth from the Vapor2.7 Solid-Solid Equilibria; 2.8 Thermodynamics of Nucleation and Interfaces; 2.9 Summary; References; 3 Thermodynamics, Origin, and Control of Defects; 3.1 Introduction; 3.2 Native Point Defects; 3.3 Dislocations; 3.4 Dislocation Cells and Grain Boundaries; 3.5 Second-Phase Particles; 3.6 Summary and Outlook; References; 4 Thermophysical Properties of Molten Silicon; 4.1 Introduction; 4.2 Density and Volumetric Thermal Expansion Coefficient; 4.3 Isobaric Molar Heat Capacity; 4.4 Emissivity; 4.5 Thermal Conductivity; 4.6 Surface Tension 327 $a4.7 Diffusion Constant4.8 Viscosity; 4.9 Electrical Conductivity; 4.10 Sensitivity Analysis; 4.11 Recommended Thermophysical Property Data for Silicon System; 4.12 Summary; References; Part II Simulation of Industrial Growth Processes; 5 Yield Improvement and Defect Control in Bridgman-Type Crystal Growth with the Aid of Thermal Modeling; 5.1 Introduction; 5.2 Principles of Thermal Modeling; 5.3 Verification of Numerical Models; 5.4 Yield Enhancement by Defect Control; 5.5 Conclusions; References; 6 Modeling of Czochralski Growth of Large Silicon Crystals; 6.1 Introduction 327 $a6.2 Numerical Model6.3 Model Validation; 6.4 Conclusions; References; 7 Global Analysis of Effects of Magnetic Field Configuration on Melt/Crystal Interface Shape and Melt Flow in a Cz-Si Crystal Growth; 7.1 Introduction; 7.2 Model Description and Governing Equations Under a Transverse Magnetic Field; 7.3 Computation Results for Model Validation; 7.4 Numerical Analysis of a TMCZ Growth; 7.5 Conclusions; References; 8 Modeling of Semitransparent Bulk Crystal Growth; 8.1 Introduction; 8.2 Numerical Model; 8.3 An Example: Growth of Bismuth Germanate Crystals; 8.4 Conclusions; References 327 $aPart III Compound Semiconductors9 Recent Progress in GaAs Growth Technologies at FREIBERGER; 9.1 Introduction; 9.2 Properties of GaAs; 9.3 Growth of Large-Diameter GaAs Single Crystals; 9.4 LEC versus VB/VGF GaAs Wafers; 9.5 Doping; 9.6 Summary; References; 10 Interface Stability and Its Impact on Control Dynamics; 10.1 Introduction; 10.2 Diameter Control; 10.3 Interface Transitions; 10.4 Factors Influencing the Shape of the Solid/Liquid Interface; 10.5 Conclusions and Discussion; References 327 $a11 Use of Forced Mixing via the Accelerated Crucible Rotation Technique (ACRT) in Bridgman Growth of Cadmium Mercury Telluride (CMT) 330 $aCapturing the essence of current trends, markets, design tools and technologies in this key field, the internationally acclaimed expert editors have put together a handy reference tailor-made for readers facing the threshold challenges between research and industrial applications.Following a look at general aspects, the book goes on to discuss simulation of industrial growth processes, compound semiconductors, scintillator crystals, oxides, and crystal machining, as well as the potential of crystal growth for sustaining energy and aspects of world crystal production.With many figures, 606 $aCrystal growth$vCongresses 606 $aCrystal growth$xIndustrial applications$vCongresses 606 $aCrystal growth$xTechnological innovations$vCongresses 608 $aElectronic books. 615 0$aCrystal growth 615 0$aCrystal growth$xIndustrial applications 615 0$aCrystal growth$xTechnological innovations 676 $a660.284298 701 $aCapper$b Peter$0463569 701 $aScheel$b Hans J$0942480 712 12$aInternational Workshop on Crystal Growth Technology 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910144685403321 996 $aCrystal growth technology$92238518 997 $aUNINA