LEADER 05867nam 2200769 a 450 001 9910144593503321 005 20170810191356.0 010 $a1-281-03220-4 010 $a9786611032203 010 $a0-470-31950-X 010 $a0-470-31949-6 035 $a(CKB)1000000000377004 035 $a(EBL)316227 035 $a(OCoLC)476106762 035 $a(SSID)ssj0000192886 035 $a(PQKBManifestationID)11183025 035 $a(PQKBTitleCode)TC0000192886 035 $a(PQKBWorkID)10215704 035 $a(PQKB)10307738 035 $a(MiAaPQ)EBC316227 035 $a(EXLCZ)991000000000377004 100 $a20070404d2007 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 00$aLiquid phase epitaxy of electronic, optical, and optoelectronic materials$b[electronic resource] /$fedited by Peter Capper, Michael Mauk 210 $aChichester, England ;$aHoboken, NJ $cWiley$dc2007 215 $a1 online resource (465 p.) 225 1 $aWiley series in materials for electronic and optoelectronic applications 300 $aDescription based upon print version of record. 311 $a0-470-85290-9 320 $aIncludes bibliographical references and index. 327 $aLiquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials; Contents; Series Preface; Preface; Acknowledgements; List of Contributors; 1 Introduction to Liquid Phase Epitaxy; 1.1 General aspects of liquid phase epitaxy; 1.2 Epitaxial growth modes, growth mechanisms and layer thicknesses; 1.3 The substrate problem; 1.4 Conclusions; Acknowledgements; References; 2 Liquid Phase Epitaxy in Russia Prior to 1990; 2.1 Introduction; 2.2 Specific features of growth of quantum-well heterostructures by LPE; 2.2.1 LPE growth from a capillary; 2.2.2 Low-temperature LPE 327 $a2.2.3 LPE growth of InGaAsP quantum well heterostructures2.3 Rare-earth elements in LPE technology of some III-V binary compounds and solid solutions; 2.4 Conclusions; Acknowledgements; References; 3 Phase Diagrams and Modeling in Liquid Phase Epitaxy; 3.1 Introduction; 3.2 Equilibrium phase diagrams; 3.2.1 Binary, ternary and quaternary phase diagrams; 3.2.2 Calculation of binary, ternary and quaternary phase diagrams; 3.2.3 Calculation of phase diagrams considering the surface, interface and strain energies; 3.2.4 Experimental determination of phase diagrams; 3.2.5 Miscibility gap 327 $a3.3 Technologies of LPE growth3.4 III-V materials for LPE growth; 3.5 Lattice matching; 3.6 Growth of misfit-dislocation-free wafers; 3.7 Phase diagrams of growth mode; 3.8 Growth kinetics; 3.8.1 Calculation of III-V layer thickness; 3.8.2 Compositional variation in III-V ternary layers; 3.9 Summary; References; Appendix; 4 Equipment and Instrumentation for Liquid Phase Epitaxy; 4.1 Introduction; 4.2 Overview, general description and operation of horizontal slideboat LPE system; 4.3 Crucibles and slideboats; 4.4 Alternative slideboat designs; 4.5 Furnaces and heating; 4.6 LPE ambient 327 $a4.7 Tubes, sealing and gas handling4.8 Controllers and heating; 4.9 Temperature measurements and other instrumentation; 4.10 Safety; 4.11 Production LPE systems; References; 5 Silicon, Germanium and Silicon-Germanium Liquid Phase Epitaxy; 5.1 Introduction and scope of review; 5.2 Historical perspective; 5.3 Basis of silicon and germanium LPE; 5.3.1 Nucleation of silicon from a molten metal solution; 5.4 Silicon LPE methods; 5.4.1 Steady-state methods of solution growth and LPE; 5.5 Solvent selection; 5.6 Low-temperature silicon LPE 327 $a5.7 Purification of silicon for solar cells in an LPE process5.8 Electrical properties of LPE-grown silicon; 5.9 LPE of Si- and Ge-based alloys; 5.10 Selective LPE and liquid phase ELO; 5.11 Solar cells; 5.11.1 Epitaxial silicon solar cells by LPE; 5.11.2 Si solution growth on nonsilicon substrates for solar cells; 5.12 Other applications of silicon and germanium LPE; 5.13 Conclusions and outlook; References; Appendix 1. Phase equilibria modeling: The silicon-metal liquidus; A1.1 The silicon-metal binary liquidus; A1.2 Alloy solvents; Appendix 2. Impurities and doping in silicon LPE 327 $aAppendix 3. Effects of oxygen and water vapor in Si LPE 330 $aLiquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE. This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and 410 0$aWiley series in materials for electronic and optoelectronic applications. 606 $aElectronics$xMaterials 606 $aOptical materials 606 $aOptoelectronic devices$xMaterials 606 $aSemiconductors 606 $aLiquid phase epitaxy 606 $aCrystal growth 608 $aElectronic books. 615 0$aElectronics$xMaterials. 615 0$aOptical materials. 615 0$aOptoelectronic devices$xMaterials. 615 0$aSemiconductors. 615 0$aLiquid phase epitaxy. 615 0$aCrystal growth. 676 $a537.622 676 $a621.3815/2 676 $a621.38152 701 $aCapper$b Peter$0463569 701 $aMauk$b Michael$0856273 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910144593503321 996 $aLiquid phase epitaxy of electronic, optical, and optoelectronic materials$91911900 997 $aUNINA