LEADER 05380nam 2200637Ia 450 001 9910144520703321 005 20170809162541.0 010 $a1-282-01047-6 010 $a9786612010477 010 $a3-527-61463-X 010 $a3-527-61462-1 035 $a(CKB)1000000000579466 035 $a(EBL)481735 035 $a(OCoLC)310371090 035 $a(SSID)ssj0000134231 035 $a(PQKBManifestationID)11147964 035 $a(PQKBTitleCode)TC0000134231 035 $a(PQKBWorkID)10055469 035 $a(PQKB)11269360 035 $a(MiAaPQ)EBC481735 035 $a(EXLCZ)991000000000579466 100 $a19970609d1997 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aCVD of compound semiconductors$b[electronic resource] $eprecursor synthesis, development and applications /$fAnthony C. Jones, Paul O'Brien 210 $aWeinheim, Germany ;$aCambridge $cVCH$dc1997 215 $a1 online resource (354 p.) 300 $aDescription based upon print version of record. 311 $a3-527-29294-2 320 $aIncludes bibliography and index. 327 $aCVD of Compound Semiconductors; Contents; 1 Basic Concepts; 1.1 Introduction; 1.2 Compound Semiconductors; 1.3 Description of the Band Gap; 1.3.1 Density of States; 1.3.2 Extrinsic Semiconductors; 1.3.3 Characterizing Carrier Concentrations; 1.3.4 Direct and Indirect Band Gaps; 1.3.5 Photoluminescence Spectroscopy; 1.3.6 p-n Junctions; 1.4 General Structural Properties of Compound Semiconductors; 1.5 Applications of III-V Semiconductors; 1.5.1 Light Emitting Diodes; 1.5.2 Solid State Lasers; 1.6 Structural Properties and Applications of II-VI Semiconductors; 1.7 III-VI Semiconductors 327 $a1.8 Vapor Phase Techniques1.8.1 Methods of Crystal Growth; 1.8.2 Historical Perspective; 1.8.3 Basic Principles of MOVPE, CBE and ALE; 1.8.3.1 Metalorganic Vapor Phase Epitaxy (MOVPE); 1.8.3.2 Chemical Beam Epitaxy; 1.8.3.3 Photoassisted Processes; 1.8.3.4 Atomic Layer Epitaxy (ALE); 1.9 References; 2 Precursor Chemistry; 2.1 Introduction; 2.2 Group IIIA Metalorganic Precursors; 2.2.1 Aluminum Chemistry; 2.2.2 Gallium; 2.2.3 Indium; 2.2.4 Group III Metal Alkyl Adducts; 2.2.5 Metalorganic Precursor Purity; 2.3 Analysis Techniques; 2.3.1 Determination of Trace Metal Impurities 327 $a2.3.2 Determination of Organic Impurities2.3.3 Identification of Impurities in the Semiconductor Layer; 2.4 Purification of Group III Trialkyl Compounds; 2.4.1 Classical Purification Techniques; 2.4.2 Adduct Purification Techniques; 2.5 Group II Metalorganic Precursors; 2.5.1 Dialkylzinc Compounds; 2.5.2 Other Group II Metalorganic Precursors; 2.6 Purification of Group II Precursors; 2.6.1 Adduct Purification of Group II Metalorganic Precursors; 2.7 Compounds of Phosphorus, Arsenic and Antimony; 2.7.1 Alkylarsenic Compounds; 2.7.2 Alkyl Phosphorus Hydrides; 2.7.3 Alkylantimony Compounds 327 $a2.8 Group VI Metalorganic Precursors2.8.1 Compounds of Sulfur, Selenium, and Tellurium; 2.9 Thermal Stability of Metalorganic Precursors; 2.9.1 DSC Data for Group III Metalorganics; 2.9.2 Base-Free Trialkyls, R3M; 2.9.3 Adducts of Group III Trialkyls; 2.9.4 Precursors Containing an Al-Hydride Bond; 2.9.5 DSC Data for Group II Alkyls; 2.9.6 Conclusions; 2.10 References; 3 MOVPE of III-V Compounds; 3.1 Introduction; 3.2 Growth of Gallium Arsenide (GaAs); 3.2.1 Growth Using Conventional Precursors; 3.2.1.1 Me/Ga/AsH3; 3.2.1.2 Et/Ga/AsH3; 3.2.2 Growth of GaAs Using Alternative Ga Precursors 327 $a3.2.3 Growth of GaAs Using Alternative As Precursors3.2.3.1 Precursor Requirements; 3.2.3.2 Trialkylarsenic Precursors; 3.2.3.3 Alkylarsenic Hydride Precursors; 3.2.3.4 Alternative Arsenic Precursors Containing Other Functional Groups; 3.3 Growth of Aluminum Gallium Arsenide (AlGaAs); 3.3.1 Growth of AlGaAs Using Conventional Precursors; 3.3.1.1 Carbon Incorporation; 3.3.1.2 Oxygen Incorporation; 3.3.2 Growth of AlGaAs Using Alternative A1 Precursors; 3.3.2.1 AlGaAs Growth Using Methyl-Based Alternatives; 3.3.2.2 AlGaAs Growth Using Ethyl-Based Alternatives 327 $a3.3.2.3 AlGaAs Growth Using Higher Al Alkyls 330 $aChemical growth methods of electronic materials are the keystone of microelectronic device processing. This book discusses the applications of metalorganic chemistry for the vapor phase deposition of compound semiconductors. Vapor phase methods used for semiconductor deposition and the materials properties that make the organometallic precursors useful in the electronics industry are discussed for a variety of materials.Topics included:* techniques for compound semiconductor growth* metalorganic precursors for III-V MOVPE* metalorganic precursors for II-VI MOVPE* si 606 $aCompound semiconductors$xDesign and construction 606 $aChemical vapor deposition 608 $aElectronic books. 615 0$aCompound semiconductors$xDesign and construction. 615 0$aChemical vapor deposition. 676 $a621.38152 676 $a660.2977 700 $aJones$b Anthony C$0622070 701 $aO'Brien$b Paul$cPh.D.$0737853 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910144520703321 996 $aCVD of compound semiconductors$91461185 997 $aUNINA