LEADER 05580nam 2200661Ia 450 001 9910143716103321 005 20170809164627.0 010 $a1-280-64946-1 010 $a9786610649464 010 $a0-470-09506-7 010 $a0-470-09505-9 035 $a(CKB)1000000000356504 035 $a(EBL)274325 035 $a(OCoLC)476018662 035 $a(SSID)ssj0000120116 035 $a(PQKBManifestationID)11130239 035 $a(PQKBTitleCode)TC0000120116 035 $a(PQKBWorkID)10080087 035 $a(PQKB)10876107 035 $a(MiAaPQ)EBC274325 035 $a(PPN)154921599 035 $a(EXLCZ)991000000000356504 100 $a20060503d2006 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 00$aCharge transport in disordered solids with applications in electronics$b[electronic resource] /$fedited by Sergei Baranovski 210 $aHoboken, NJ $cWiley$dc2006 215 $a1 online resource (499 p.) 225 1 $aWiley series in materials for electronic and optoelectronic applications 300 $aDescription based upon print version of record. 311 $a0-470-09504-0 320 $aIncludes bibliographical references and index. 327 $aCover; Contents; Series Preface; Preface; 1: Charge Transport via Delocalized States in Disordered Materials; 1.1 INTRODUCTION; 1.2 TRANSPORT BY ELECTRONS IN EXTENDED STATES FAR FROM THE MOBILITY EDGES; 1.2.1 Weak-scattering theories; 1.2.2 Weak localization; 1.2.3 Interaction effects; 1.3 SCALING THEORY OF LOCALIZATION; 1.3.1 Main ideas of the scaling theory of localization; 1.3.2 The main equations of one-parameter scaling; 1.3.3 Model solutions; 1.3.4 Some predictions of the scaling theory; 1.3.5 Minimum metallic conductivity; 1.4 EXTENDED-STATE CONDUCTION IN THREE DIMENSIONS 327 $a1.4.1 Activated conduction1.4.2 Extended-state conduction near the metal-insulator transition; 1.5 APPARENT MOBILITY EDGE AND EXTENDED-STATE CONDUCTION IN TWO-DIMENSIONAL SYSTEMS; 1.5.1 Experimental studies of the mobility edge in low-mobility two-dimensional systems; 1.5.2 Evidence for a true metal-insulator transition in high-mobility two-dimensional systems; 1.5.3 Evidence against a true metal-insulator transition in two-dimensional systems; 1.5.4 Temperature-dependent charge carrier scattering; 1.6 CONCLUSIONS; REFERENCES; 2: Description of Charge Transport in Amorphous Semiconductors 327 $a2.1 INTRODUCTION2.2 GENERAL REMARKS ON CHARGE TRANSPORT IN DISORDERED MATERIALS; 2.3 HOPPING CHARGE TRANSPORT IN DISORDERED MATERIALS VIA LOCALIZED STATES; 2.3.1 Nearest-neighbor hopping; 2.3.2 Variable-range hopping; 2.4 DESCRIPTION OF CHARGE-CARRIER ENERGY RELAXATION AND HOPPING CONDUCTION IN INORGANIC NONCRYSTALLINE MATERIALS; 2.4.1 Dispersive transport in disordered materials; 2.4.2 The concept of the transport energy; 2.5 EINSTEIN'S RELATIONSHIP FOR HOPPING ELECTRONS; 2.5.1 Nonequilibrium charge carriers; 2.5.2 Equilibrium charge carriers; 2.6 STEADY-STATE PHOTOCONDUCTIVITY 327 $a2.6.1 Low-temperature photoconductivity2.6.2 Temperature dependence of the photoconductivity; 2.7 THERMALLY STIMULATED CURRENTS-A TOOL TO DETERMINE DOS?; 2.8 DARK CONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS; 2.9 NONLINEAR FIELD EFFECTS; 2.10 CONCLUDING REMARKS; REFERENCES; 3: Hydrogenated Amorphous Silicon-Material Properties and Device Applications; 3.1 INTRODUCTION; 3.2 PREPARATION AND STRUCTURAL PROPERTIES OF AMORPHOUS SILICON; 3.3 DENSITY OF STATES DISTRIBUTION IN THE ENERGY GAP; 3.3.1 Model of the density of states distribution; 3.3.2 Band-tail states; 3.3.3 Deep defect states 327 $a3.4 OPTICAL PROPERTIES3.5 TRANSPORT PROPERTIES; 3.6 RECOMBINATION OF EXCESS CARRIERS; 3.6.1 Low-temperature regime (T 60 K); 3.7 DEVICE APPLICATIONS; 3.7.1 Schottky barrier diodes; 3.7.2 p-i-n diodes; 3.7.3 Thin-film transistors; 3.8 THIN-FILM SOLAR CELLS; REFERENCES; 4: Applications of Disordered Semiconductors in Modern Electronics: Selected Examples; 4.1 PERSPECTIVES ON AMORPHOUS SEMICONDUCTORS; 4.2 DIRECT CONVERSION DIGITAL X-RAY IMAGE DETECTORS; 4.3 X-RAY PHOTOCONDUCTORS; 4.4 STABILIZED AMORPHOUS SELENIUM (a-Se) 327 $a4.5 AVALANCHE MULTIPLICATION AND ULTRA-HIGH-SENSITIVE HARP VIDEO TUBE 330 $aThe field of charge conduction in disordered materials is a rapidly evolving area owing to current and potential applications of these materials in various electronic devices This text aims to cover conduction in disordered solids from fundamental physical principles and theories, through practical material development with an emphasis on applications in all areas of electronic materials. International group of contributorsPresents basic physical concepts developed in this field in recent years in a uniform mannerBrings up-to-date, in a one-stop source, a key evolving area in 410 0$aWiley series in materials for electronic and optoelectronic applications. 606 $aAmorphous semiconductors$xElectric properties 606 $aSolids$xElectric properties 606 $aSemiconductors$xMaterials 615 0$aAmorphous semiconductors$xElectric properties. 615 0$aSolids$xElectric properties. 615 0$aSemiconductors$xMaterials. 676 $a621.38152 701 $aBaranovski$b Sergei$0949541 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910143716103321 996 $aCharge transport in disordered solids with applications in electronics$92146242 997 $aUNINA