LEADER 05600nam 2200721Ia 450 001 9910143174803321 005 20200520144314.0 010 $a1-280-26478-0 010 $a9786610264780 010 $a0-470-32128-8 010 $a0-471-46417-1 010 $a0-471-22156-2 035 $a(CKB)111087027126486 035 $a(EBL)215165 035 $a(SSID)ssj0000080454 035 $a(PQKBManifestationID)11107463 035 $a(PQKBTitleCode)TC0000080454 035 $a(PQKBWorkID)10095856 035 $a(PQKB)10709055 035 $a(MiAaPQ)EBC215165 035 $a(OCoLC)85820930 035 $a(CaSebORM)9780471417774 035 $a(OCoLC)840429218 035 $a(OCoLC)ocn840429218 035 $a(EXLCZ)99111087027126486 100 $a20010619d2001 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aLow-voltage SOI CMOS VLSI devices and circuits /$fJames B. Kuo, Shih-Chia Lin 205 $a1st edition 210 $aNew York $cWiley$dc2001 215 $a1 online resource (424 p.) 300 $a"A Wiley-Interscience publication." 311 $a0-471-41777-7 320 $aIncludes bibliographical references and index. 327 $aContents; Preface; Acknowledgments; 1 Introduction; 1.1 Evolution of CMOS VLSI; 1.2 SOI versus Bulk; 1.3 Low-Voltage SOI VLSI; 1.4 Objectives; References; 2 SOI CMOS Devices-Part I; 2.1 Basic SOI Technology; 2.1.1 SOI Wafers; 2.1.2 Shallow Trench Isolation; 2.1.3 SOI Device Structure; 2.2 Back Gate Bias Effects; 2.2.1 PD versus FD; 2.2.2 Inversion versus Accumulation; 2.3 Short Channel Effects; 2.3.1 Biasing Dependence; 2.3.2 Structure Dependence; 2.3.3 Processing Dependence; 2.3.4 Subthreshold; 2.4 Narrow Channel Effects; 2.4.1 Structure Dependence; 2.4.2 Subthreshold 327 $a2.4.3 Back Gate Bias Dependence2.4.4 Isolation Dependence; 2.5 Mobility; 2.5.1 Vertical Field Dependence; 2.5.2 Lateral Field Dependence; 2.6 Floating Body Effects; 2.6.1 Strong Inversion Kink Effects; 2.6.2 Body Contact; 2.6.3 Various Techniques to Reduce Kink Effects; 2.7 Subthreshold Behavior; 2.7.1 FD versus PD; 2.7.2 PD; 2.7.3 DIBL Dependence; 2.7.4 Latch/GIDL Behavior; 2.8 Impact lonization; 2.8.1 Basic Analysis; 2.8.2 Body Current; 2.8.3 Monitoring Techniques; 2.9 Breakdown; 2.9.1 Structure Dependence; 2.9.2 Bipolar Induced Effects; 2.9.3 LDD; 2.10 Transient-Induced Leakage 327 $a2.11 History Effects2.12 Self-Heating; 2.12.1 Drain Current; 2.12.2 Thermal Resistance; 2.12.3 Thermal Coupling; 2.12.4 AC Behavior; 2.13 Transient Behaviors; 2.13.1 Floating-Body Induced; 2.13.2 History Effect; 2.14 Summary; References; Problems; 3 SOI CMOS Devices-Part II; 3.1 Hot Carriers; 3.1.1 NMOS; 3.1.2 PMOS; 3.1.3 Substrate Current; 3.1.4 Back Gate Bias; 3.1.5 Device Structure Dependence; 3.1.6 Stress Time; 3.1.7 Isolation Structure; 3.1.8 SOI Wafers; 3.1.9 Lifetime; 3.2 Accumulation-Mode Devices; 3.2.1 DC Behavior; 3.2.2 AC Behavior; 3.2.3 Thin-Film Thickness 327 $a3.2.4 Accumulation versus Inversion3.3 Double Gate; 3.4 DTMOS; 3.4.1 Basic Performance; 3.4.2 Second-Order Effects; 3.5 Scaling Trends; 3.6 Single Electron Transistors (SET); 3.7 Electrostatic Discharge (ESD); 3.8 Temperature Dependence; 3.8.1 Noise; 3.9 Sensitivity; 3.10 Radiation Effects; 3.11 Summary; References; Problems; 4 Fundamentals of SOI CMOS Circuits; 4.1 Basic Circuit Issues; 4.1.1 Layout; 4.1.2 High Speed and Low Power; 4.1.3 Floating Body; 4.1.4 Self-Heating; 4.2 Floating Body Effects; 4.2.1 Static Logic Circuits; 4.2.2 Pass Gate Transistors; 4.2.3 Switch Network Logic (SNL) 327 $a4.2.4 Hysteresis4.2.5 Analog Circuits; 4.3 Low-Voltage Circuit Techniques; 4.3.1 Low-Voltage Technology; 4.3.2 Dynamic Body Control; 4.3.3 Sense Amp; 4.4 DTMOS Circuits; 4.4.1 DTMOS Device; 4.4.2 DTMOS Inverter; 4.4.3 DTMOS Buffer; 4.4.4 Advanced DTMOS Devices; 4.4.5 Active Body Control; 4.5 MTCMOS Circuits; 4.6 Noise; 4.7 Self-Heating; 4.8 ESD Circuits; 4.9 System-on-a Chip (SOC) Technology; 4.10 Summary; References; Problems; 5 SOI CMOS Digital Circuits; 5.1 Static Logic Circuits; 5.1.1 SOI CPL; 5.1.2 DTPT; 5.1.3 SOI CVSL; 5.1.4 SOI Adiabatic CVSL; 5.2 Dynamic Logic Circuits 327 $a5.2.1 SOI DTMOS Dynamic Logic Circuit 330 $aA practical, comprehensive survey of SOI CMOS devices and circuits for microelectronics engineersThe microelectronics industry is becoming increasingly dependent on SOI CMOS VLSI devices and circuits. This book is the first to address this important topic with a practical focus on devices and circuits. It provides an up-to-date survey of the current knowledge regarding SOI device behaviors and describes state-of-the-art low-voltage CMOS VLSI analog and digital circuit techniques.Low-Voltage SOI CMOS VLSI Devices and Circuits covers the entire field, from basic concepts to the most adva 606 $aLow voltage integrated circuits 606 $aIntegrated circuits$xVery large scale integration 606 $aMetal oxide semiconductors, Complementary 615 0$aLow voltage integrated circuits. 615 0$aIntegrated circuits$xVery large scale integration. 615 0$aMetal oxide semiconductors, Complementary. 676 $a621.39 676 $a621.39/5 676 $a621.395 700 $aKuo$b James B.$f1956-$0770617 701 $aLin$b Shih-Chia$0968935 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910143174803321 996 $aLow-voltage SOI CMOS VLSI devices and circuits$92201334 997 $aUNINA