LEADER 02560oam 2200433zu 450 001 9910140891403321 005 20241212220018.0 010 $a9781424456840 010 $a1424456843 035 $a(CKB)2670000000058844 035 $a(SSID)ssj0000527291 035 $a(PQKBManifestationID)12178360 035 $a(PQKBTitleCode)TC0000527291 035 $a(PQKBWorkID)10526010 035 $a(PQKB)10190729 035 $a(NjHacI)992670000000058844 035 $a(EXLCZ)992670000000058844 100 $a20160829d2010 uy 101 0 $aeng 135 $aur||||||||||| 181 $ctxt 182 $cc 183 $acr 200 10$a2010 22nd IEEE International Semiconductor Laser Conference 210 31$a[Place of publication not identified]$cIEEE$d2010 215 $a1 online resource 300 $aBibliographic Level Mode of Issuance: Monograph 311 08$a9781424456833 311 08$a1424456835 330 $aUltrashort laser sources with pulse durations in the sub-picosecond regime enable a new domain of precision machining of various materials. Pulse durations shorter than the electron-phonon coupling time lead to minimum thermal load or even non-thermal ablation processes. Exploiting non-linear absorption processes, the absorption becomes nearly material independent when laser pulses of several micro joule energy and high beam quality are focused on the materials surface. Very small pulse energies and high intensities well above the vaporization threshold enable high-precision cutting, ablation and drilling of even weakly absorbing materials, multi-component and multi-layer systems. Additionally, focusing ultrafast laser pulses in the volume of transparent dielectrics allows localized modification of the bulk material. Specifically, defined refractive index changes in glasses and crystals can be utilized for wave guiding and beam forming applications. In addition, a combined approach of material modification followed by chemical etching provides the possibility to manufacture micro-channels or 3D-micro mechanical parts. The 3D-capability of the in-volume materials processing by selective laser etching "ISLE" originates from the non-linear absorption of light in the initially transparent material. 606 $aSemiconductor lasers$vCongresses 615 0$aSemiconductor lasers 676 $a621.366 702 $aIEEE Staff 801 0$bPQKB 906 $aPROCEEDING 912 $a9910140891403321 996 $a2010 22nd IEEE International Semiconductor Laser Conference$92527056 997 $aUNINA