LEADER 04515nam 2200661 450 001 9910139778103321 005 20221206181826.0 010 $a1-282-38210-1 010 $a9786612382109 010 $a0-470-82344-5 010 $a0-470-82343-7 024 7 $a10.1002/9780470823446 024 8 $a9786612382109 035 $a(CKB)1000000000799093 035 $a(EBL)479881 035 $a(SSID)ssj0000614710 035 $a(PQKBManifestationID)12235966 035 $a(PQKBTitleCode)TC0000614710 035 $a(PQKBWorkID)10604987 035 $a(PQKB)10576691 035 $a(MiAaPQ)EBC479881 035 $a(CaBNVSL)mat05681002 035 $a(IDAMS)0b0000648145d11d 035 $a(IEEE)5681002 035 $a(CaSebORM)9780470823422 035 $a(PPN)256498814 035 $a(OCoLC)520990512 035 $a(EXLCZ)991000000000799093 100 $a20151221d2009 uy 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aCompact MOSFET models for VLSI design /$fA.B. Bhattacharyya 205 $a1st edition 210 1$aSingapore ;$cJohn Wiley & Sons (Asia),$dc2009. 210 2$a[Piscataqay, New Jersey] :$cIEEE Xplore,$d[2009] 215 $a1 online resource (458 p.) 300 $aDescription based upon print version of record. 311 $a0-470-82342-9 320 $aIncludes bibliographical references and index. 327 $aSemiconductor physics review for MOSFET modeling -- Ideal metal oxide semiconductor capacitor -- Non-ideal and non-classical MOS capacitors -- Long channel MOS transistor -- The scaled MOS transistor -- Quasistatic, non-quasistatic, and noise models -- Quantum phenomena in MOS transistors -- Non-classical MOSFET structures -- Appendix A : expression for electric field and potential variation in the semiconductor space charge under the gate -- Appendix B : features of select compact MOSFET models -- Appendix C : PSP two-point collocation method. 330 $aPracticing designers, students, and educators in the semiconductor field face an ever expanding portfolio of MOSFET models. In Compact MOSFET Models for VLSI Design, A.B. Bhattacharyya presents a unified perspective on the topic, allowing the practitioner to view and interpret device phenomena concurrently using different modeling strategies. Readers will learn to link device physics with model parameters, helping to close the gap between device understanding and its use for optimal circuit performance. Bhattacharyya also lays bare the core physical concepts that will drive the future of VLSI development, allowing readers to stay ahead of the curve, despite the relentless evolution of new models. . Adopts a unified approach to guide students through the confusing array of MOSFET models. Links MOS physics to device models to prepare practitioners for real-world design activities. Helps fabless designers bridge the gap with off-site foundries. Features rich coverage of: . quantum mechanical related phenomena. Si-Ge strained-Silicon substrate. non-classical structures such as Double Gate MOSFETs . Presents topics that will prepare readers for long-term developments in the field. Includes solutions in every chapter. Can be tailored for use among students and professionals of many levels. Comes with MATLAB code downloads for independent practice and advanced study This book is essential for students specializing in VLSI Design and indispensible for design professionals in the microelectronics and VLSI industries. Written to serve a number of experience levels, it can be used either as a course textbook or practitioner's reference. Access the MATLAB code, solution manual, and lecture materials at the companion website: www.wiley.com/go/bhattacharyya. 606 $aIntegrated circuits$xVery large scale integration$xDesign and construction 606 $aMetal oxide semiconductor field-effect transistors$xDesign and construction 615 0$aIntegrated circuits$xVery large scale integration$xDesign and construction. 615 0$aMetal oxide semiconductor field-effect transistors$xDesign and construction. 676 $a621.39/5 676 $a621.395 700 $aBhattacharyya$b A. B.$g(Amalendu Bhushan)$0845637 801 0$bCaBNVSL 801 1$bCaBNVSL 801 2$bCaBNVSL 906 $aBOOK 912 $a9910139778103321 996 $aCompact MOSFET models for VLSI design$91887809 997 $aUNINA