LEADER 05409nam 2200649Ia 450 001 9910139758803321 005 20170815165130.0 010 $a1-282-27933-5 010 $a9786612279331 010 $a3-527-62844-4 010 $a3-527-62845-2 035 $a(CKB)1000000000790056 035 $a(EBL)482192 035 $a(OCoLC)741345643 035 $a(SSID)ssj0000391847 035 $a(PQKBManifestationID)11269177 035 $a(PQKBTitleCode)TC0000391847 035 $a(PQKBWorkID)10346261 035 $a(PQKB)11451540 035 $a(MiAaPQ)EBC482192 035 $a(PPN)146317378 035 $a(EXLCZ)991000000000790056 100 $a20071029d2009 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aHandbook of nitride semiconductors and devices$hVol. 3$iGaN-based optical and electronic devices$b[electronic resource] /$fHadis Morkoc? 210 $aWeinheim $cWiley-VCH ;$a[Chichester $cJohn Wiley, distributor]$d2009 215 $a1 online resource (905 p.) 225 1 $aHandbook of Nitride Semiconductors and Devices (VCH) 300 $aDescription based upon print version of record. 311 $a3-527-40839-8 320 $aIncludes bibliographical references and index. 327 $aHandbook of Nitride Semiconductors and Devices; Contents; Preface; Color Tables; 1 Light-Emitting Diodes and Lighting; Introduction; 1.1 Current-Conduction Mechanism in LED-Like Structures; 1.2 Optical Output Power; 1.3 Losses and Efficiency; 1.4 Current Crowding; 1.5 Packaging; 1.6 Perception of Visible Light and Color; 1.7 Visible-Light Terminology; 1.7.1 Luminous Efficacy; 1.7.2 Chromaticity Coordinates and Color Temperature; 1.8 Inroads by LEDs; 1.9 Nitride LED Performance; 1.9.1 LEDs on Sapphire Substrates; 1.9.1.1 Blue and Green LEDs; 1.9.1.2 Amber LEDs; 1.9.1.3 UV LEDs 327 $a1.9.1.4 Resonant Cavity-Enhanced LED1.9.1.5 Effect of Threading Dislocation on LEDs; 1.9.2 LEDs on SiC Substrates; 1.9.3 LEDs on Si Substrates; 1.9.4 LEDs Utilizing Rare Earth Transitions; 1.10 On the Nature of Light Emission in Nitride-Based LEDs; 1.10.1 Pressure Dependence of Spectra; 1.10.2 Current and Temperature Dependence of Spectra; 1.11 LED Degradation; 1.12 LED Efficiency; 1.13 Monochrome Applications of LEDs; 1.14 Luminescence Conversion and White-Light Generation with Nitride LEDs; 1.14.1 Color as Related to White-Light LEDs; 1.14.2 Color Rendering Index 327 $a1.15 Approaches to White-Light Generation1.15.1 White Light from Three-Chip LEDs; 1.15.2 White Light from Four-Chip LEDs; 1.15.3 Combining LEDs and Phosphor(s); 1.15.4 Other Photon Conversion Schemes; 1.16 Toward the White-Light Applications; 1.17 Organic/Polymeric LEDs (OLED, PLED); 1.17.1 OLED Structures; 1.17.2 Charge and Energy Transport Fundamentals; 1.17.3 Properties of Organic Crystals; 1.17.4 Light Emission Dynamics; 1.17.4.1 Nonradiative Recombination; 1.17.4.2 Internal Conversion; 1.17.4.3 Intersystem Crossing; 1.17.4.4 Singlet Fission; 1.17.4.5 Aggregation and Davydov Splitting 327 $a1.17.4.6 Charge-Transfer Excitons1.17.5 OLED Devices; 1.17.5.1 White OLEDs; 1.17.5.2 Displays; 1.17.6 Lighting with OLEDs; References; 2 Semiconductor Lasers; Introduction; 2.1 A Primer to the Principles of Lasers; 2.2 Waveguiding; 2.2.1 Refractive Index of GaN and AlGaN; 2.2.2 Refractive Index of InGaN; 2.2.3 Analytical Solution to the Waveguide Problem; 2.2.4 Numerical Solution of the Waveguide Problem; 2.2.5 Far-Field Pattern; 2.3 Loss, Threshold, and Cavity Modes; 2.4 Optical Gain; 2.4.1 A Glossary for Semiconductor Lasers; 2.4.2 Optical Gain in Bulk Layers: A Semiconductor Approach 327 $a2.4.2.1 Relating Absorption Rate to Absorption Coefficient2.4.2.2 Relating Stimulated Emission Rate to Absorption Coefficient; 2.4.2.3 Relating Spontaneous Emission Rate to Absorption Coefficient; 2.4.2.4 Fermi's Golden Rule, Stimulated and Spontaneous Emission Rates, and Absorption Coefficient Within the k-Selection Rule; 2.4.3 Gain in Quantum Wells; 2.5 Coulombic Effects; 2.6 Numerical Gain Calculations for GaN; 2.6.1 Optical Gain in Bulk GaN; 2.6.2 Gain in GaN Quantum Wells; 2.6.3 Gain Calculations in Wz GaN Q Wells Without Strain; 2.6.4 Gain Calculations in Wz Q Wells with Strain 327 $a2.6.5 Gain in ZB Q Wells Without Strain 330 $aThe three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 3 deals with nitride semiconductor devices and device technology. Among the application areas that feature prominently here are LEDs, lasers, FETs and HBTs, detectors and unique issues surrounding solar blind detection. 410 0$aHandbook of Nitride Semiconductors and Devices (VCH) 606 $aSemiconductors$xMaterials 606 $aNitrides 615 0$aSemiconductors$xMaterials. 615 0$aNitrides. 676 $a621.38152 700 $aMorkoc?$b Hadis$0920442 701 $aMorkoc?$b Hadis$0920442 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910139758803321 996 $aHandbook of nitride semiconductors and devices$92064460 997 $aUNINA