LEADER 05128nam 2200685Ia 450 001 9910139624603321 005 20170809152956.0 010 $a1-282-68859-6 010 $a9786612688591 010 $a0-470-61163-4 010 $a0-470-39428-5 035 $a(CKB)2550000000005850 035 $a(EBL)477638 035 $a(OCoLC)520990469 035 $a(SSID)ssj0000341133 035 $a(PQKBManifestationID)11267228 035 $a(PQKBTitleCode)TC0000341133 035 $a(PQKBWorkID)10390287 035 $a(PQKB)11331703 035 $a(MiAaPQ)EBC477638 035 $a(EXLCZ)992550000000005850 100 $a20090323d2009 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 00$aOptoelectronic sensors$b[electronic resource] /$fedited by Didier Decoster, Joseph Harari 210 $aLondon, UK $cISTE ;$aHoboken, NJ $cWiley$d2009 215 $a1 online resource (290 p.) 225 1 $aISTE ;$vv.80 300 $aDescription based upon print version of record. 311 $a1-84821-078-7 320 $aIncludes bibliographical references and index. 327 $aOptoelectronic Sensors; Table of Contents; Preface; Chapter 1. Introduction to Semiconductor Photodetectors; 1.1. Brief overview of semiconductor materials; 1.2. Photodetection with semiconductors: basic phenomena; 1.3. Semiconductor devices; 1.4. p-n junctions and p-i-n structures; 1.5. Avalanche effect in p-i-n structures; 1.6. Schottky junction; 1.7. Metal-semiconductor-metal (MSM) structures; 1.8. Operational parameters of photodetectors; 1.8.1. Response coefficient, gain and quantum efficiency; 1.8.2. Temporal response and bandwidth; 1.8.3. Noise equivalent power; 1.8.4. Detectivity 327 $aChapter 2. PIN Photodiodes for the Visible and Near-Infrared2.1. Introduction; 2.2. Physical processes occurring in photodiodes; 2.2.1. Electrostatics in PIN diodes: depleted region; 2.2.2. Mechanisms of electron-hole pair generation; 2.2.3. Transport mechanisms; 2.3. Static characteristics of PIN photodiodes; 2.3.1. I/V characteristics and definition of static parameters; 2.3.2. External quantum efficiency; 2.3.3. Dark current; 2.3.4. Breakdown voltage; 2.3.5. Saturation current; 2.4. Dynamic characteristics of PIN photodiodes; 2.4.1. Intrinsic limitations to the speed of response 327 $a2.4.2. Limitations due to the circuit2.4.3. Power-frequency compromise, Pf2 "law"; 2.5. Semiconductor materials used in PIN photodiodes for the visible and near-infrared; 2.5.1. Absorption of semiconductors in the range 400-1,800 nm; 2.5.2. From 400 to 900 nm: silicon and the GaAlAs/GaAs family; 2.5.3. From 900 to 1,800 nm: germanium, GaInAsP/InP; 2.6. New photodiode structures; 2.6.1. Beyond the limits of conventional PIN; 2.6.2. Photodiodes with collinear geometry; 2.6.3. Waveguide photodiodes; 2.6.4. Traveling-wave photodiodes; 2.6.5. Beyond PIN structures; 2.7. Bibliography 327 $aChapter 3. Avalanche Photodiodes3.1. Introduction; 3.2. History; 3.3. The avalanche effect; 3.3.1. Ionization coefficients; 3.3.2. Multiplication factors; 3.3.3. Breakdown voltage; 3.4. Properties of avalanche photodiodes; 3.4.1. Current-voltage characteristics and photomultiplication; 3.4.2. Noise in avalanche photodiodes; 3.4.3. Signal-to-noise ratio in avalanche photodiodes; 3.4.4. Speed, response time and frequency response of avalanche photodiodes; 3.5. Technological considerations; 3.5.1. Guard ring junctions; 3.5.2. "Mesa" structures; 3.5.3. Crystal defects and microplasmas 327 $a3.6. Silicon avalanche photodiodes3.6.1. Si N+P APDs; 3.6.2. Si N+P?P+ APDs; 3.6.3. Si N+?P?P+ APDs; 3.6.4. SiPt-Si N Schottky APDs; 3.7. Avalanche photodiodes based on gallium arsenide; 3.8. Germanium avalanche photodiodes; 3.8.1. Ge APDs with N+P, N+NP and P+N structures for 1.3 ?m communication; 3.8.2. Ge APDs with P+NN- structures for 1.55 ?m communication; 3.9. Avalanche photodiodes based on indium phosphate (InP); 3.9.1. InGaAs/InP APDs for optical communications at 2.5 Gbit/s; 3.9.2. Fast InGaAs/InP APDs; 3.10. III-V low-noise avalanche photodiodes 327 $a3.10.1. III-V super-lattice or MQW APDs 330 $aOptoelectronic sensors combine optical and electronic systems for numerous applications including pressure sensors, security systems, atmospheric particle measurement, close tolerance measurement, quality control, and more. This title provides an examination of the latest research in photonics and electronics in the areas of sensors. 410 0$aISTE 606 $aOptical detectors 606 $aImage converters 608 $aElectronic books. 615 0$aOptical detectors. 615 0$aImage converters. 676 $a681.25 676 $a681/.25 686 $aZQ 3120$2rvk 686 $aZN 5030$2rvk 701 $aDecoster$b Didier$f1948-$0937283 701 $aHarari$b Joseph$f1961-$0937284 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910139624603321 996 $aOptoelectronic sensors$92111210 997 $aUNINA