LEADER 04103nam 2200613Ia 450 001 9910139511403321 005 20170809152939.0 010 $a1-282-69013-2 010 $a9786612690136 010 $a0-470-61181-2 010 $a0-470-61039-5 035 $a(CKB)2550000000005873 035 $a(EBL)477661 035 $a(OCoLC)520990481 035 $a(SSID)ssj0000354751 035 $a(PQKBManifestationID)11275384 035 $a(PQKBTitleCode)TC0000354751 035 $a(PQKBWorkID)10315832 035 $a(PQKB)11169578 035 $a(MiAaPQ)EBC477661 035 $a(EXLCZ)992550000000005873 100 $a20090428d2009 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aSilicon non-volatile memories$b[electronic resource] $epaths of innovation /$fBarbara De Salvo 210 $aLondon, UK $cISTE ;$aHoboken, NJ, USA $cJ. Wiley$d2009 215 $a1 online resource (248 p.) 225 1 $aISTE ;$vv.144 300 $aRevison of author's thesis (Ph. D.)--Joseph Fourier University of Grenoble, 2007. 311 $a1-84821-105-8 320 $aIncludes bibliographical references and index. 327 $aSilicon Non-Volatile Memories; Table of Contents; Preface; Chapter 1. Introduction; Chapter 2. Semiconductor Industry Overview; 2.1. The cyclical semiconductor market; 2.2. The leading IC companies; 2.3. The world IC market distribution; 2.4. Semiconductor sales by IC devices; 2.5. The semiconductor memory market; 2.6. The impressive price decline of IC circuits; 2.7. Moore's Law, the ITRS and their economic impacts; 2.8. Exponential growth of manufacturing and R&D costs; 2.9. The structural evolution of the semiconductor industry; 2.10. Consolidation of the semiconductor memory sector 327 $a2.11. Conclusions2.12. References; Chapter 3. Research on Advanced Charge Storage Memories; 3.1. Key features of Flash technology; 3.2. Flash technology scaling; 3.3. Innovative paths in silicon NVM technologies; 3.4. Research on advanced charge storage memories; 3.4.1. Silicon nanocrystal memories; 3.4.2. Silicon nanocrystal memories with high-k IPDs; 3.4.3. Hybrid silicon nanocrystal/SiN memories with high-k IPDs; 3.4.4. Silicon nanocrystal double layer memories with high-k IPDs; 3.4.5. Metal nano-dots coupled with organic templates; 3.4.6. High-k IPD-based memories 327 $a3.4.7. High-k/metal gate stacks for "TANOS" memories3.4.8. FinFlash devices; 3.4.9. Molecular charge-based memories; 3.4.10. Effects of the few electron phenomena; 3.5. Conclusions; 3.6. References; Chapter 4. Future Paths of Innovation; 4.1. 3D integration of charge-storage memories; 4.2. Alternative technologies; 4.2.1. Ferro RAMs; 4.2.2. Magnetic RAMs; 4.2.3. Phase-change RAMs; 4.2.4. Conductive bridging RAMs; 4.2.5. Oxide resistive RAMs; 4.2.6. New crossbar architectures; 4.3. Conclusion; 4.4. References; Chapter 5. Conclusions; 5.1. References; Index 330 $aThis book provides a comprehensive overview of the different technological approaches currently being studied to fulfill future memory requirements. Two main research paths are identified and discussed. Different "evolutionary paths" based on new materials and new transistor structures are investigated to extend classical floating gate technology to the 32 nm node. "Disruptive paths" are also covered, addressing 22 nm and smaller IC generations. Finally, the main factors at the origin of these phenomena are identified and analyzed, providing pointers on future research activities and developme 410 0$aISTE 606 $aSemiconductor storage devices 606 $aFlash memories (Computers) 608 $aElectronic books. 615 0$aSemiconductor storage devices. 615 0$aFlash memories (Computers) 676 $a621.381 676 $a621.39/732 700 $aDe Salvo$b Barbara$0955807 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910139511403321 996 $aSilicon non-volatile memories$92163469 997 $aUNINA