LEADER 05478nam 2200685Ia 450 001 9910139503503321 005 20200520144314.0 010 $a1-282-69002-7 010 $a9786612690020 010 $a0-470-68211-6 010 $a0-470-68212-4 035 $a(CKB)2550000000006564 035 $a(EBL)480432 035 $a(OCoLC)587391573 035 $a(SSID)ssj0000342758 035 $a(PQKBManifestationID)11258832 035 $a(PQKBTitleCode)TC0000342758 035 $a(PQKBWorkID)10288206 035 $a(PQKB)10079029 035 $a(MiAaPQ)EBC480432 035 $a(Au-PeEL)EBL480432 035 $a(CaPaEBR)ebr10361168 035 $a(CaONFJC)MIL269002 035 $a(PPN)167616803 035 $a(EXLCZ)992550000000006564 100 $a20090617d2009 uy 0 101 0 $aeng 135 $aurcn||||||||| 181 $ctxt 182 $cc 183 $acr 200 10$aSelf-commutating converters for high power applications$b[electronic resource] /$fJos Arrillaga ... [et al.] 210 $aChichester, West Sussex, U.K. $cJ. Wiley$d2009 215 $a1 online resource (326 p.) 300 $aDescription based upon print version of record. 311 $a0-470-74682-3 320 $aIncludes bibliographical references and index. 327 $aSelf-Commutating Converters for High Power Applications; Contents; Preface; 1 Introduction; 1.1 Early developments; 1.2 State of the large power semiconductor technology; 1.2.1 Power ratings; 1.2.2 Losses; 1.2.3 Suitability for large power conversion; 1.2.4 Future developments; 1.3 Voltage and current source conversion; 1.4 The pulse and level number concepts; 1.5 Line-commutated conversion (LCC); 1.6 Self-commutating conversion (SCC); 1.6.1 Pulse width modulation (PWM); 1.6.2 Multilevel voltage source conversion; 1.6.3 High-current self-commutating conversion; 1.7 Concluding statement 327 $aReferences 2 Principles of Self-Commutating Conversion; 2.1 Introduction; 2.2 Basic VSC operation; 2.2.1 Power transfer control; 2.3 Main converter components; 2.3.1 DC capacitor; 2.3.2 Coupling reactance; 2.3.3 The high-voltage valve; 2.3.4 The anti-parallel diodes; 2.4 Three-phase voltage source conversion; 2.4.1 The six-pulse VSC configuration; 2.4.2 Twelve-pulse VSC configuration; 2.5 Gate driving signal generation; 2.5.1 General philosophy; 2.5.2 Selected harmonic cancellation; 2.5.3 Carrier-based sinusoidal PWM; 2.6 Space-vector PWM pattern 327 $a2.6.1 Comparison between the switching patterns 2.7 Basic current source conversion operation; 2.7.1 Analysis of the CSC waveforms; 2.8 Summary; References; 3 Multilevel Voltage Source Conversion; 3.1 Introduction; 3.2 PWM-assisted multibridge conversion; 3.3 The diode clamping concept; 3.3.1 Three-level neutral point clamped VSC; 3.3.2 Five-level diode-clamped VSC; 3.3.3 Diode clamping generalization; 3.4 Theying capacitor concept; 3.4.1 Three-level flying capacitor conversion; 3.4.2 Multi-level flying capacitor conversion; 3.5 Cascaded H-bridge conguration 327 $a3.6 Modular multilevel conversion (MMC) 3.7 Summary; References; 4 Multilevel Reinjection; 4.1 Introduction; 4.2 The reinjection concept in line-commutated current source conversion; 4.2.1 The reinjection concept in the double-bridge configuration; 4.3 Application of the reinjection concept to self-commutating conversion; 4.3.1 Ideal injection signal required to produce a sinusoidal output waveform; 4.3.2 Symmetrical approximation to the ideal injection; 4.4 Multilevel reinjection (MLR)-the waveforms; 4.5 MLR implementation-the combination concept; 4.5.1 CSC configuration 327 $a4.5.2 VSC configuration 4.6 MLR implementation-the distribution concept; 4.6.1 CSC configuration; 4.6.2 VSC configuration; 4.7 Summary; References; 5 Modelling and Control of Converter Dynamics; 5.1 Introduction; 5.2 Control system levels; 5.2.1 Firing control; 5.2.2 Converter state control; 5.2.3 System control level; 5.3 Non-linearity of the power converter system; 5.4 Modelling the voltage source converter system; 5.4.1 Conversion under pulse width modulation; 5.5 Modelling grouped voltage source converters operating with fundamental frequency switching 327 $a5.6 Modelling the current source converter system 330 $aFor very high voltage or very high current applications, the power industry still relies on thyristor-based Line Commutated Conversion (LCC), which limits the power controllability to two quadrant operation. However, the ratings of self-commutating switches such as the Insulated-Gate Bipolar Transistor (IGBT) and Integrated Gate-Commutated Thyristor (IGCT), are reaching levels that make the technology possible for very high power applications. This unique book reviews the present state and future prospects of self-commutating static power converters for applications requiring either 606 $aCommutation (Electricity) 606 $aElectric current converters 606 $aElectric power distribution$xHigh tension 615 0$aCommutation (Electricity) 615 0$aElectric current converters. 615 0$aElectric power distribution$xHigh tension. 676 $a621.31/7 700 $aArrillaga$b J$08232 701 $aArrillaga$b J$08232 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910139503503321 996 $aSelf-commutating converters for high power applications$92051916 997 $aUNINA