LEADER 05317nam 2200649Ia 450 001 9910139499203321 005 20200918204441.0 010 $a1-282-48274-2 010 $a9786612482748 010 $a3-527-62995-5 010 $a3-527-62996-3 035 $a(CKB)2550000000007399 035 $a(EBL)485698 035 $a(OCoLC)609856381 035 $a(SSID)ssj0000365854 035 $a(PQKBManifestationID)11925596 035 $a(PQKBTitleCode)TC0000365854 035 $a(PQKBWorkID)10414393 035 $a(PQKB)11760748 035 $a(MiAaPQ)EBC485698 035 $a(EXLCZ)992550000000007399 100 $a20781220d2010 uy 0 101 0 $aeng 135 $aur|n||||||||| 181 $ctxt 182 $cc 183 $acr 200 00$aSilicon nanocrystals$b[electronic resource] $efundamentals, synthesis and applications /$fedited by Lorenzo Pavesi and Rasit Turan 210 $aHoboken, NJ $cWiley-Blackwell$d2010 215 $a1 online resource (651 p.) 300 $aDescription based upon print version of record. 311 $a3-527-32160-8 320 $aIncludes bibliographical references and index. 327 $aSilicon Nanocrystals: Fundamentals, Synthesis and Applications; Contents; List of Contributors; 1 Introduction; References; 2 Electronic and Optical Properties of Silicon Nanocrystals; 2.1 Introduction; 2.2 Ab Initio Calculation for Small Nanocrystals; 2.2.1 Hydrogenated Silicon Nanocrystals; 2.2.2 Oxidized Silicon Nanocrystals; 2.2.3 Doped Silicon Nanocrystals; 2.2.3.1 Single-Doped Silicon Nanocrystals; 2.2.3.2 Codoped Silicon Nanocrystals; 2.2.4 Silicon Nanocrystals Embedded in a SiO2 Matrix; 2.3 Pseudopotential Calculations for Large Nanocrystals; 2.3.1 Effective Optical Gap 327 $a2.3.2 Radiative Lifetime2.3.3 Linear Optical Absorption; 2.3.3.1 Interband Absorption; 2.3.3.2 Intraband Absorption; 2.3.3.3 Excited State Absorption; 2.3.4 Third-Order Nonlinear Optical Properties; 2.3.5 Quantum-Confined Stark Effect in Si Nanocrystals; References; 3 Optical Properties of Intrinsic and Shallow Impurity-Doped Silicon Nanocrystals; 3.1 Introduction; 3.2 PL Properties of Intrinsic Silicon Nanocrystals; 3.2.1 Fundamental Properties; 3.2.2 Effect of Size and Shape Distribution on the PL Bandwidth; 3.2.3 Resonant Quenching of PL Band Due to Energy Transfer 327 $a3.2.4 PL Quantum Efficiency of Intrinsic Si Nanocrystals3.3 Shallow Impurity-Doped Si Nanocrystals; 3.3.1 Preparation of Impurity-Doped Si Nanocrystals; 3.3.2 PL from B-Doped Si Nanocrystals; 3.3.3 PL from P-Doped Si Nanocrystals; 3.3.4 Electron Spin Resonance Studies of Shallow Impurity-Doped Si Nanocrystals; 3.3.5 Location of Dopant Atoms; 3.4 P and B Codoped Si Nanocrystals; 3.4.1 PL Properties of P and B Codoped Si Nanocrystals; 3.4.2 PL Lifetime of P and B Codoped Si Nanocrystals; 3.4.3 Codoped But Not Compensated Si Nanocrystals; 3.5 Summary; References 327 $a4 Electrical Transport Mechanisms in Ensembles of Silicon Nanocystallites4.1 Introduction; 4.2 Background; 4.2.1 Basic Concepts Associated with Transport and Quantum Dots; 4.2.2 Previous Studies of Transport in Systems of Si; 4.3 Experimental Details; 4.4 Experimental Results and Their Interpretation; 4.4.1 The Low-x Regime; 4.4.2 The Low-x to Intermediate-x Transition Regime; 4.4.3 The Intermediate-x Regime; 4.4.4 The Percolation Threshold Regime; 4.4.5 The High-x Regime; 4.5 Discussion and Overview; References; 5 Thermal Properties and Heat Transport in Silicon-Based Nanostructures 327 $a5.1 Introduction5.2 Thermal Conductivity in Bulk Solids and Nanostructures; 5.2.1 Kinetic Theory: Thermal Properties and Heat Flow; 5.2.2 Lattice Thermal Conductivity; 5.2.3 Electronic Thermal Conductivity; 5.3 Measurements of Thermal Conductivity in Nanostructures; 5.3.1 The 3? Method; 5.3.2 In-Plane Thermal Conductivity Measurements; 5.3.3 Pump-Probe and Other Optical Measurements; 5.3.4 Raman Scattering and Thermal Conductivity; 5.4 Thermal Properties of Si-Based Nanostructures; 5.4.1 Two- and One-Dimensional Si Nanostructures: Si-on-Insulator and Si Nanowires 327 $a5.4.2 Epitaxially Grown Si/SiGe Nanostructures: Superlattices and Cluster Multilayers 330 $aThis unique collection of knowledge represents a comprehensive treatment of the fundamental and practical consequences of size reduction in silicon crystals.This clearly structured reference introduces readers to the optical, electrical and thermal properties of silicon nanocrystals that arise from their greatly reduced dimensions. It covers their synthesis and characterization from both chemical and physical viewpoints, including ion implantation, colloidal synthesis and vapor deposition methods. A major part of the text is devoted to applications in microelectronics as well as photonics 606 $aNanosilicon 606 $aSilicon crystals 608 $aElectronic books. 615 0$aNanosilicon. 615 0$aSilicon crystals. 676 $a661.0683 676 $a661.0683 22 701 $aPavesi$b Lorenzo$0283736 701 $aTuran$b Rasit$0946282 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 801 2$bCaOLU 906 $aBOOK 912 $a9910139499203321 996 $aSilicon nanocrystals$92137923 997 $aUNINA LEADER 01903nam 2200433Ia 450 001 996386583803316 005 20200824132950.0 035 $a(CKB)1000000000616482 035 $a(EEBO)2240914654 035 $a(OCoLC)ocm33151088e 035 $a(OCoLC)33151088 035 $a(EXLCZ)991000000000616482 100 $a19950918d1551 uy | 101 0 $aeng 135 $aurbn||||a|bb| 200 12$aA proclamacion set furth by the Kynges Maiestie, with the aduise of His Highnes moste honorable counsail, the ix. day of Marche, in the fifth yere of Hys Highnes most prosperous reigne, forbidding the eating of flesh in the tyme of Lent, and other dayes prohibited$b[electronic resource] 210 $a[London?] $cRichardus Grafton typographus Regius excudebat$dM. D. L. [i.e. 1551] 215 $a2 leaves 300 $aContains wood-cut initial. 300 $a"Cum priuilegio ad imprimendum sol[um?]." 300 $aImperfect: faded and with broken type; some loss of text. 300 $aReproduction of original in: Society of Antiquaries. 330 $aeebo-0147 606 $aLent 606 $aFasts and feasts$xChurch of England 606 $aFasts and feasts$zEngland 607 $aGreat Britain$xHistory$yEdward VI, 1547-1553 608 $aBroadsides$zLondon (England)$y16th century.$2rbgenr 615 0$aLent. 615 0$aFasts and feasts$xChurch of England. 615 0$aFasts and feasts 701 $aEdward$cKing of England,$f1537-1553.$01002269 801 0$bEBK 801 1$bEBK 801 2$bWaOLN 906 $aBOOK 912 $a996386583803316 996 $aA proclamacion set furth by the Kynges Maiestie, with the aduise of His Highnes moste honorable counsail, the ix. day of Marche, in the fifth yere of Hys Highnes most prosperous reigne, forbidding the eating of flesh in the tyme of Lent, and other dayes prohibited$92304946 997 $aUNISA