LEADER 04629nam 2200589 450 001 9910137395803321 005 20231207213836.0 010 $a3-527-68087-X 010 $a3-527-68094-2 010 $a3-527-68093-4 035 $a(CKB)3710000000552255 035 $a(EBL)4305742 035 $a(MiAaPQ)EBC4305742 035 $a(Au-PeEL)EBL4305742 035 $a(CaPaEBR)ebr11137224 035 $a(CaONFJC)MIL884638 035 $a(OCoLC)935254588 035 $a(EXLCZ)993710000000552255 100 $a20160115h20162016 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $2rdacontent 182 $2rdamedia 183 $2rdacarrier 200 00$aResistive switching $efrom fundamentals of nanoionic redox processes to memristive device applications /$fedited by Daniele Ielmini and Rainer Waser ; contributors, Hiro Akinaga [and sixty-four others] 210 1$aWeinheim an der Bergstrasse, Germany :$cWiley-VCH,$d2016. 210 4$dİ2016 215 $a1 online resource (954 pages) 300 $aDescription based upon print version of record. 311 $a3-527-33417-3 320 $aIncludes bibliographical references at the end of each chapters and index. 327 $aRelated Titles; Title Page; Copyright; Table of Contents; Preface; List of Contributors; Chapter 1: Introduction to Nanoionic Elements for Information Technology; 1.1 Concept of Two-Terminal Memristive Elements; 1.2 Memory Applications; 1.3 Logic Circuits; 1.4 Prospects and Challenges; Acknowledgments; References; Chapter 2: ReRAM Cells in the Framework of Two-Terminal Devices; 2.1 Introduction; 2.2 Two-Terminal Device Models; 2.3 Fundamental Description of Electronic Devices with Memory; 2.4 Device Engineer's View on ReRAM Devices as Two-Terminal Elements; 2.5 Conclusions; Acknowledgment 327 $aReferencesChapter 3: Atomic and Electronic Structure of Oxides; 3.1 Introduction; 3.2 Crystal Structures; 3.3 Electronic Structure; 3.4 Material Classes and Characterization of the Electronic States; 3.5 Electronic Structure of Selected Oxides; 3.6 Ellingham Diagram for Binary Oxides; Acknowledgments; References; Chapter 4: Defect Structure of Metal Oxides; 4.1 Definition of Defects; 4.2 General Considerations on the Equilibrium Thermodynamics of Point Defects; 4.3 Definition of Point Defects; 4.4 Space-Charge Effects; 4.5 Case Studies; References; Chapter 5: Ion Transport in Metal Oxides 327 $a5.1 Introduction5.2 Macroscopic Definition; 5.3 Microscopic Definition; 5.4 Types of Diffusion Experiments; 5.5 Mass Transport along and across Extended Defects; 5.6 Case Studies; Acknowledgments; References; Chapter 6: Electrical Transport in Transition Metal Oxides; 6.1 Overview; 6.2 Structure of Transition Metal Oxides; 6.3 Models of Electrical Transport; 6.4 Band Insulators; 6.5 Half-Filled Mott Insulators; 6.6 Temperature-Induced Metal-Insulator Transitions in Oxides; References; Chapter 7: Quantum Point Contact Conduction; 7.1 Introduction 327 $a7.2 Conductance Quantization in Metallic Nanowires7.3 Conductance Quantization in Electrochemical Metallization Cells; 7.4 Filamentary Conduction and Quantization Effects in Binary Oxides; 7.5 Conclusion and Outlook; References; Chapter 8: Dielectric Breakdown Processes; 8.1 Introduction; 8.2 Basics of Dielectric Breakdown; 8.3 Physics of Defect Generation; 8.4 Breakdown and Oxide Failure Statistics; 8.5 Implications of Breakdown Statistics for ReRAM; 8.6 Chemistry of the Breakdown Path and Inference on Filament Formation; 8.7 Summary and Conclusions; References 327 $aChapter 9: Physics and Chemistry of Nanoionic Cells9.1 Introduction; 9.2 Basic Thermodynamics and Heterogeneous Equilibria; 9.3 Phase Boundaries and Boundary Layers; 9.4 Nucleation and Growth; 9.5 Electromotive Force; 9.6 General Transport Processes and Chemical Reactions; 9.7 Solid-State Reactions; 9.8 Electrochemical (Electrode) Reactions; 9.9 Stoichiometry Polarization; Summary; Acknowledgments; References; Chapter 10: Electroforming Processes in Metal Oxide Resistive-Switching Cells; 10.1 Introduction; 10.2 Forming Mechanisms; 10.3 Technical Issues Related to Forming 327 $a10.4 Summary and Outlook 606 $aNanoelectronics 606 $aMemristors 615 0$aNanoelectronics. 615 0$aMemristors. 676 $a621.381 702 $aIelmini$b Daniele 702 $aWaser$b Rainer 702 $aAkinaga$b Hiro 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910137395803321 996 $aResistive Switching$92591327 997 $aUNINA