LEADER 04645nam 22008535 450 001 9910136808703321 005 20200706094355.0 010 $a4-431-55800-4 024 7 $a10.1007/978-4-431-55800-2 035 $a(CKB)3710000000627611 035 $a(SSID)ssj0001657830 035 $a(PQKBManifestationID)16442282 035 $a(PQKBTitleCode)TC0001657830 035 $a(PQKBWorkID)14989380 035 $a(PQKB)11237840 035 $a(DE-He213)978-4-431-55800-2 035 $a(MiAaPQ)EBC6302873 035 $a(MiAaPQ)EBC5585587 035 $a(Au-PeEL)EBL5585587 035 $a(OCoLC)1066192451 035 $a(PPN)192769359 035 $a(EXLCZ)993710000000627611 100 $a20160330d2015 u| 0 101 0 $aeng 135 $aurnn|008mamaa 181 $ctxt 182 $cc 183 $acr 200 10$aDefects and Impurities in Silicon Materials$b[electronic resource] $eAn Introduction to Atomic-Level Silicon Engineering /$fedited by Yutaka Yoshida, Guido Langouche 205 $a1st ed. 2015. 210 1$aTokyo :$cSpringer Japan :$cImprint: Springer,$d2015. 215 $a1 online resource (XV, 487 p. 292 illus., 180 illus. in color.) 225 1 $aLecture Notes in Physics,$x0075-8450 ;$v916 300 $aBibliographic Level Mode of Issuance: Monograph 311 $a4-431-55799-7 327 $aDiffusion and point defects in silicon materials -- Density functional modeling of defects and impurities in silicon materials -- Electrical and optical defect evaluation techniques for electronic and solar grade silicon -- Intrinsic point defect engineering during single crystal Si and Ge growth from a melt -- Computer simulation of crystal growth for CZ-Si single crystals and Si solar cells -- Oxygen precipitation in silicon -- Defect characterization by electron beam induced current and cathode luminescence methods -- Nuclear methods to study defects and impurities in Si materials using heavy ion accelerators -- Defect Engineering in silicon materials. 330 $aThis book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved. 410 0$aLecture Notes in Physics,$x0075-8450 ;$v916 606 $aSemiconductors 606 $aNanotechnology 606 $aEngineering?Materials 606 $aSolid state physics 606 $aNanoscale science 606 $aNanoscience 606 $aNanostructures 606 $aSemiconductors$3https://scigraph.springernature.com/ontologies/product-market-codes/P25150 606 $aNanotechnology$3https://scigraph.springernature.com/ontologies/product-market-codes/Z14000 606 $aMaterials Engineering$3https://scigraph.springernature.com/ontologies/product-market-codes/T28000 606 $aNanotechnology and Microengineering$3https://scigraph.springernature.com/ontologies/product-market-codes/T18000 606 $aSolid State Physics$3https://scigraph.springernature.com/ontologies/product-market-codes/P25013 606 $aNanoscale Science and Technology$3https://scigraph.springernature.com/ontologies/product-market-codes/P25140 615 0$aSemiconductors. 615 0$aNanotechnology. 615 0$aEngineering?Materials. 615 0$aSolid state physics. 615 0$aNanoscale science. 615 0$aNanoscience. 615 0$aNanostructures. 615 14$aSemiconductors. 615 24$aNanotechnology. 615 24$aMaterials Engineering. 615 24$aNanotechnology and Microengineering. 615 24$aSolid State Physics. 615 24$aNanoscale Science and Technology. 676 $a546.683 702 $aYoshida$b Yutaka$4edt$4http://id.loc.gov/vocabulary/relators/edt 702 $aLangouche$b Guido$4edt$4http://id.loc.gov/vocabulary/relators/edt 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910136808703321 996 $aDefects and Impurities in Silicon Materials$92102079 997 $aUNINA