LEADER 06006nam 2200685 450 001 9910135029103321 005 20200520144314.0 010 $a1-119-24630-X 010 $a1-119-24628-8 010 $a1-119-24631-8 035 $a(CKB)4330000000009598 035 $a(EBL)4698013 035 $a(MiAaPQ)EBC4698013 035 $a(DLC) 2016041464 035 $a(Au-PeEL)EBL4698013 035 $a(CaPaEBR)ebr11271943 035 $a(CaONFJC)MIL957778 035 $a(OCoLC)960702309 035 $a(PPN)197324444 035 $a(EXLCZ)994330000000009598 100 $a20160901d2017 uy| 0 101 0 $aeng 135 $aur|n|---||||| 181 $2rdacontent 182 $2rdamedia 183 $2rdacarrier 200 10$aTunnel field-effect transistors (TFET) $emodelling and simulations /$fJagadesh Kumar Mamidala, Rajat Vishnoi, Pratyush Pandey 205 $a1 210 1$aHoboken :$cWiley,$d2017. 215 $a1 online resource (208 p.) 300 $aDescription based upon print version of record. 311 $a1-119-24629-6 320 $aIncludes bibliographical references and index. 327 $aTitle Page ; Copyright; Contents; Preface; Chapter 1 Quantum mechanics ; 1.1 Introduction to quantum mechanics; 1.1.1 The double slit experiment; 1.1.2 Basic concepts of quantum mechanics; 1.1.3 Schrodingers? equation; 1.2 Basic quantum physics problems; 1.2.1 Free particle; 1.2.2 Particle in a one-dimensional box; Reference; Chapter 2 Basics of tunnelling ; 2.1 Understanding tunnelling; 2.1.1 Qualitative description; 2.1.2 Rectangular barrier; 2.2 WKB approximation; 2.3 Landauers? tunnelling formula; 2.4 Advanced tunnelling models; 2.4.1 Non-local tunnelling models 327 $a2.4.2 Local tunnelling modelsReferences; Chapter 3 The tunnel FET ; 3.1 Device structure; 3.1.1 The need for tunnel FETs; 3.1.2 Basic TFET structure; 3.2 Qualitative behaviour; 3.2.1 Band diagram; 3.2.2 Device characteristics; 3.2.3 Performance dependence on device parameters; 3.3 Types of TFETs; 3.3.1 Planar TFETs; 3.3.2 Three-dimensional TFETs; 3.3.3 Carbon nanotube and graphene TFETs; 3.3.4 Point versus line tunnelling in TFETs; 3.4 Other steep subthreshold transistors; References; Chapter 4 Drain current modelling of tunnel FET: the task and its challenges ; 4.1 Introduction 327 $a4.2 TFETmodelling approach4.2.1 Finding the value of ?C; 4.2.2 Modelling the surface potential in the source-channel junction; 4.2.3 Finding the tunnelling current; 4.3 MOSFETmodelling approach; References; Chapter 5 Modelling the surface potential in TFETs ; 5.1 The pseudo-2D method; 5.1.1 Parabolic approximation of potential distribution; 5.1.2 Solving the 2D Poisson equation using parabolic approximation; 5.1.3 Solution for the surface potential; 5.2 The variational approach; 5.2.1 The variational form of Poissons? equation 327 $a5.2.2 Solution of the variational form of Poissons? equation in a TFET5.3 The infinite series solution; 5.3.1 Solving the 2D Poisson equation using separation of variables; 5.3.2 Solution of the homogeneous boundary value problem; 5.3.3 The solution to the 2D Poisson equation in a TFET; 5.3.4 The infinite series solution to Poissons? equation in a TFET; 5.4 Extension of surface potential models to differentTFETstructures; 5.4.1 DG TFET; 5.4.2 GAA TFET; 5.4.3 Dual material gate TFET; 5.5 The effect of localised charges on the surface potential; 5.6 Surface potential in the depletion regions 327 $a5.7 Use of smoothing functions in the surface potential modelsReferences; Chapter 6 Modelling the drain current ; 6.1 Non-local methods; 6.1.1 Landauers? tunnelling formula in TFETs; 6.1.2 WKB approximation in TFETs; 6.1.3 Obtaining the drain current; 6.2 Local methods; 6.2.1 Numerical integration; 6.2.2 Shortest tunnelling length; 6.2.3 Constant polynomial term assumption; 6.2.4 Tangent line approximation; 6.3 Threshold voltage models; 6.3.1 Constant current method; 6.3.2 Constant tunnelling length; 6.3.3 Transconductance change (TC) method; References 327 $aChapter 7 Device simulation using ATLAS 330 $a"This one-stop study aid to TFETs is aimed at those who are beginning their study on TFETs and also as a guide for those who wish to design circuits using TFETs. The book covers the physics behind the functioning of the TFETs and their modelling for the purpose of circuit design and circuit simulation. It begins with a brief discussion on the basic principles of quantum mechanics and then builds up to the physics behind the quantum mechanical phenomena of band-to-band tunnelling. This is followed by studying the basic functioning of the TFETs and their different structural configurations. After explaining the functioning of the TFETs, the book describes different approaches used by researchers for developing the drain current models for TFETs. Finally, to help the new researchers in the area of TFETs, the book describes the process of carrying out numerical simulations of TFETs using TCAD. Numerical simulations are helpful tools for studying the behaviour of any semiconductor device without getting into the complex process of fabrication and characterization"--$cProvided by publisher. 606 $aTunnel field-effect transistors 606 $aIntegrated circuits$xDesign and construction 606 $aNanostructured materials 606 $aLow voltage integrated circuits 615 0$aTunnel field-effect transistors. 615 0$aIntegrated circuits$xDesign and construction. 615 0$aNanostructured materials. 615 0$aLow voltage integrated circuits. 676 $a621.3815/284 686 $aTEC008090$2bisacsh 700 $aKumar$b Mamidala Jagadesh$0870649 702 $aVishnoi$b Rajat 702 $aPandey$b Pratyush 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910135029103321 996 $aTunnel field-effect transistors (TFET)$91943621 997 $aUNINA