LEADER 05560nam 2200685Ia 450 001 9910133450903321 005 20170814182032.0 010 $a1-118-09951-6 010 $a1-283-37459-5 010 $a9786613374592 010 $a1-118-07173-5 010 $a1-61344-177-0 010 $a1-118-07174-3 035 $a(CKB)3400000000000352 035 $a(EBL)700543 035 $a(SSID)ssj0000476930 035 $a(PQKBManifestationID)11332019 035 $a(PQKBTitleCode)TC0000476930 035 $a(PQKBWorkID)10502327 035 $a(PQKB)10195000 035 $a(MiAaPQ)EBC700543 035 $a(OCoLC)705355215 035 $a(CaSebORM)9781118099513 035 $a(EXLCZ)993400000000000352 100 $a20110310d2011 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aHandbook of cleaning for semiconductor manufacturing$b[electronic resource] $efundamentals and applications /$fKaren A. Reinhardt, Richard F. Reidy 205 $a1st edition 210 $aSalem, Mass. ;$aScrivener ;$aHoboken, N.J. $cJohn Wiley & Sons, Inc.$dc2011 215 $a1 online resource (616 p.) 225 1 $aWiley-Scrivener ;$vv.48 300 $aDescription based upon print version of record. 311 $a0-470-62595-3 320 $aIncludes bibliographical references and index. 327 $aHandbook of Cleaning for Semiconductor Manufacturing: Fundamentals and Applications; Contents; Foreword; Introduction; Part 1: Fundamentals; 1. Surface and Colloidal Chemical Aspects of Wet Cleaning; 1.1 Introduction to Surface Chemical Aspects of Cleaning; 1.2 Chemistry of Solid-Water Interface; 1.2.1 Surface Charging of Oxide Films in Aqueous Solutions; 1.2.2 Surface Charging of Silicon Nitride Films in Aqueous Solutions; 1.2.3 Electrified Interfaces: The Double Layer and Zeta Potential; 1.2.3.1 Oxide Films and Particles; 1.2.3.2 Nitride Films and Particles 327 $a1.3 Particulate Contamination: Theory and Measurements1.3.1 Effect of the Electric Double Layer Formation on Particulate Contamination; 1.3.2 Direct Measurement of Interaction Forces between Particles and Surfaces; 1.4 Influence of Surface Electrical Charges on Metal Ion Adsorption; 1.5 Wettability of Surfaces; 1.5.1 Surface Tension and Surface Energy; 1.5.2 Adsorption Characteristics and Wettability Modification; 1.6 High Aspect Ratio Cleaning: Narrow Structures; 1.6.1 Rate of Liquid Penetration into Narrow Structures; 1.6.2 Enhancement of Liquid Penetration into Narrow Structures 327 $a1.7 Surface Tension Gradient: Application to Drying1.7.1 Isopropyl Alcohol Surface Tension Gradient Drying; 1.7.2 Water Layer After Drying; 1.7.3 Alternate Chemicals for Drying; 1.8 Summary; References; 2. The Chemistry of Wet Cleaning; 2.1 Introduction to Aqueous Cleaning; 2.1.1 Background of Aqueous Cleaning Chemistry; 2.2 Overview of Aqueous Cleaning Processes; 2.2.1 RCA Cleaning; 2.2.2 Modified RCA Processes; 2.2.3 Other Cleaning Processes; 2.3 The SC-1 Clean or APM; 2.3.1 Electrochemistry of SC-1; 2.3.2 Molecular Mechanism; 2.3.3 Etching Rate in APM; 2.3.4 Concentration Variations 327 $a2.3.5 Concentration Monitoring and Control2.3.6 APM-related Surface Roughening; 2.3.6.1 Vapor Etching; 2.3.6.2 Galvanic Etching and Masking; 2.3.6.3 Catalyzed H2O2 Depletion; 2.3.7 Metal-ion Contamination and Complexing Agents; 2.3.8 Diluted APM; 2.4 The SC-2 clean or HPM; 2.4.1 Particle Deposition; 2.4.2 Hydrogen Peroxide Decomposition in SC-2; 2.4.3 Hydrochloric Acid Fumes; 2.4.4 Diluted HC1; 2.5 Sulfuric Acid-Hydrogen Peroxide Mixture; 2.5.1 Stripping and Cleaning Mechanism; 2.5.1.1 Dissolution Reaction; 2.5.1.2 Discoloration Reaction; 2.5.2 Particulate and Sulfate Contamination 327 $a2.5.3 Alternatives2.5.3.1 Modification of SPM; 2.5.3.2 Sulfur Trioxide; 2.6 Hydrofluoric Acid; 2.6.1 Hydrogen Passivation; 2.6.2 Etching Rate Control; 2.6.3 Bath Monitoring; 2.6.3.1 Conductivity; 2.6.3.2 Near Infrared; 2.6.4 Contamination; Acknowledgments; References; 3. The Chemistry of Wet Etching; 3.1 Introduction and Overview; 3.1.1 Definition of Etching; 3.1.2 The Physics of Wet Etching; 3.1.2.1 Difference in Bond Strength; 3.1.2.2 Absence of the Proper Reactant; 3.1.2.3 Formation of Inhibiting Coatings; 3.2 Silicon Dioxide Etching; 3.2.1 Hydrofluoric Acid Etching 327 $a3.2.2 Water-based Etching 330 $aThis comprehensive volume provides an in-depth discussion of the fundamentals of cleaning and surface conditioning of semiconductor applications such as high-k/metal gate cleaning, copper/low-k cleaning, high dose implant stripping, and silicon and SiGe passivation. The theory and fundamental physics associated with wet etching and wet cleaning is reviewed, plus the surface and colloidal aspects of wet processing. Formulation development practices and methodology are presented along with the applications for preventing copper corrosion, cleaning aluminum lines, and other sensitive layers. This 410 0$aWiley-Scrivener 606 $aSemiconductors$xSurfaces$xCleaning 606 $aSurface preparation 615 0$aSemiconductors$xSurfaces$xCleaning. 615 0$aSurface preparation. 676 $a621.38152 700 $aReinhardt$b Karen A$0958210 701 $aReidy$b Richard F.$f1960-$0958211 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910133450903321 996 $aHandbook of cleaning for semiconductor manufacturing$92170892 997 $aUNINA