LEADER 05252nam 2200637 a 450 001 9910130957603321 005 20200520144314.0 010 $a3-527-64191-2 010 $a1-283-86989-6 010 $a3-527-64192-0 010 $a3-527-64190-4 035 $a(CKB)3460000000080886 035 $a(EBL)843678 035 $a(OCoLC)797919438 035 $a(SSID)ssj0000667316 035 $a(PQKBManifestationID)11422229 035 $a(PQKBTitleCode)TC0000667316 035 $a(PQKBWorkID)10674340 035 $a(PQKB)11383445 035 $a(OCoLC)775437990 035 $a(MiAaPQ)EBC843678 035 $a(Au-PeEL)EBL843678 035 $a(CaPaEBR)ebr10630521 035 $a(CaONFJC)MIL418239 035 $a(PPN)243218575 035 $a(EXLCZ)993460000000080886 100 $a20121213d2012 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aPorous silicon in practice$b[electronic resource] $epreparation, characterization and applications /$fMichael J. Sailor 210 $aWeinheim $cWiley-VCH$d2012 215 $a1 online resource (263 p.) 300 $aDescription based upon print version of record. 311 $a3-527-31378-8 320 $aIncludes bibliographical references and index. 327 $aPorous Silicon in Practice: Preparation, Characterization and Applications; Contents; Preface; 1: Fundamentals of Porous Silicon Preparation; 1.1 Introduction; 1.2 Chemical Reactions Governing the Dissolution of Silicon; 1.2.1 Silicon Oxides and Their Dissolution in HF; 1.2.2 Silicon Oxides and Their Dissolution in Basic Media; 1.2.3 Silicon Hydrides; 1.3 Experimental Set-up and Terminology for Electrochemical Etching of Porous Silicon; 1.3.1 Two-Electrode Cell; 1.3.2 Three-Electrode Cell; 1.4 Electrochemical Reactions in the Silicon System 327 $a1.4.1 Four-Electron Electrochemical Oxidation of Silicon1.4.2 Two-Electron Electrochemical Oxidation of Silicon; 1.4.3 Electropolishing; 1.5 Density, Porosity, and Pore Size Definitions; 1.6 Mechanisms of Electrochemical Dissolution and Pore Formation; 1.6.1 Chemical Factors Controlling the Electrochemical Etch; 1.6.2 Crystal Face Selectivity; 1.6.3 Physical Factors Controlling the Electrochemical Etch; 1.7 Resume of the Properties of Crystalline Silicon; 1.7.1 Orientation; 1.7.2 Band Structure; 1.7.3 Electrons and Holes; 1.7.4 Photoexcitation of Semiconductors; 1.7.5 Dopants 327 $a1.7.6 Conductivity1.7.7 Evolution of Energy Bands upon Immersion in an Electrolyte; 1.7.8 Charge Transport at p-Type Si Liquid Junctions; 1.7.9 Idealized Current-Voltage Curve at p-Type Liquid Junctions; 1.7.10 Energetics at n-Type Si Liquid Junctions; 1.7.11 Idealized Current-Voltage Curve at n-type Liquid Junctions; 1.8 Choosing, Characterizing, and Preparing a Silicon Wafer; 1.8.1 Measurement of Wafer Resistivity; 1.8.2 Cleaving a Silicon Wafer; 1.8.3 Determination of Carrier Type by the Hot-Probe Method; 1.8.4 Ohmic Contacts; 1.8.4.1 Making an Ohmic Contact by Metal Evaporation 327 $a1.8.4.2 Making an Ohmic Contact by Mechanical AbrasionReferences; 2: Preparation of Micro-, Meso-, and Macro-Porous Silicon Layers; 2.1 Etch Cell: Materials and Construction; 2.2 Power Supply; 2.3 Other Supplies; 2.4 Safety Precautions and Handling of Waste; 2.5 Preparing HF Electrolyte Solutions; 2.6 Cleaning Wafers Prior to Etching; 2.6.1 No Precleaning; 2.6.2 Ultrasonic Cleaning; 2.6.3 RCA Cleaning; 2.6.4 Removal of a Sacrificial Porous Layer with Strong Base; 2.7 Preparation of Microporous Silicon from a p-Type Wafer; 2.8 Preparation of Mesoporous Silicon from a p++-Type Wafer 327 $a2.9 Preparation of Macroporous, Luminescent Porous Silicon from an n-Type Wafer (Frontside Illumination)2.9.1 Power Supply Limitations; 2.10 Preparation of Macroporous, Luminescent Porous Silicon from an n-Type Wafer (Back Side Illumination); 2.11 Preparation of Porous Silicon by Stain Etching; 2.12 Preparation of Silicon Nanowire Arrays by Metal-Assisted Etching; References; 3: Preparation of Spatially Modulated Porous Silicon Layers; 3.1 Time-Programmable Current Source; 3.1.1 Time Resolution Issues; 3.1.2 Etching with an Analog Source; 3.1.3 Etching with a Digital Source 327 $a3.2 Pore Modulation in the z-Direction: Double Layer 330 $aBy means of electrochemical treatment, crystalline silicon can be permeated with tiny, nanostructured pores that entirely change the characteristics and properties of the material. One prominent example of this can be seen in the interaction of porous silicon with living cells,which can be totally unwilling to settle on smooth silicon surfaces but readily adhere to porous silicon, giving rise to great hopes for suchfuture applications as programmable drug delivery or advanced, braincontrolled prosthetics. Porous silicon research is active in the fieldsof sensors, tissue engineering 606 $aPorous silicon 615 0$aPorous silicon. 676 $a620.193 700 $aSailor$b Michael J$0891323 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910130957603321 996 $aPorous silicon in practice$91990759 997 $aUNINA