LEADER 05181nam 2200613 450 001 9910130957403321 005 20170821193928.0 010 $a3-527-63993-4 010 $a3-527-63992-6 010 $a3-527-63991-8 035 $a(CKB)3460000000080888 035 $a(EBL)1658413 035 $a(SSID)ssj0000667289 035 $a(PQKBManifestationID)11443429 035 $a(PQKBTitleCode)TC0000667289 035 $a(PQKBWorkID)10674741 035 $a(PQKB)10564332 035 $a(MiAaPQ)EBC1658413 035 $a(EXLCZ)993460000000080888 100 $a20150411h20122012 uy| 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 00$aAtomic layer deposition of nanostructured materials /$fedited by Nicola Pinna and Mato Knez 210 1$aWeinheim :$cWiley-VCH,$d[2012] 210 4$dİ2012 215 $a1 online resource (979 p.) 300 $aDescription based upon print version of record. 311 $a3-527-32797-5 320 $aIncludes bibliographical references and index. 327 $aCover; Related Titles; Title Page; Copyright; Foreword; Preface; Introduction; 1 Introduction; 2 Basic Features of ALD; 3 Short History of the ALD Technology; 4 The ALD Community in the Academia and Industry; 5 Conclusions; References; List of Contributors; Part One: Introduction to ALD; Chapter 1: Theoretical Modeling of ALD Processes; 1.1 Introduction; 1.2 Overview of Atomistic Simulations; 1.3 Calculation of Properties Using Quantum Simulations; 1.4 Prediction of ALD Chemical Mechanisms; 1.5 Example of a Calculated ALD Mechanism: ALD of Al2O3 Using TMA and Water; References 327 $aChapter 2: Step Coverage in ALD2.1 Introduction; 2.2 Growth Techniques; 2.3 Step Coverage Models in ALD; 2.4 Experimental Verifications of Step Coverage Models; 2.5 Summary; References; Chapter 3: Precursors for ALD Processes; 3.1 Introduction; 3.2 General Requirements for ALD Precursors; 3.3 Metallic Precursors for ALD; 3.4 Nonmetal Precursors for ALD; 3.5 Conclusions; References; Chapter 4: Sol-Gel Chemistry and Atomic Layer Deposition; 4.1 Aqueous and Nonaqueous Sol-Gel in Solution; 4.2 Sol-Gel and ALD: An Overview; 4.3 Mechanistic and In Situ Studies; References 327 $aChapter 5: Molecular Layer Deposition of Hybrid Organic-Inorganic Films5.1 Introduction; 5.2 General Issues for MLD of Hybrid Organic-Inorganic Films; 5.3 MLD Using Trimethylaluminum and Ethylene Glycol in an AB Process; 5.4 Expansion to an ABC Process Using Heterobifunctional and Ring-Opening Precursors; 5.5 Use of a Homotrifunctional Precursor to Promote Cross-Linking in an AB Process; 5.6 Use of a Heterobifunctional Precursor in an ABC Process; 5.7 MLD of Hybrid Alumina-Siloxane Films Using an ABCD Process; 5.8 Future Prospects for MLD of Hybrid Organic-Inorganic Films; Acknowledgments 327 $aReferencesChapter 6: Low-Temperature Atomic Layer Deposition; 6.1 Introduction; 6.2 Challenges of LT-ALD; 6.3 Materials and Processes; 6.4 Toward Novel LT-ALD Processes; 6.5 Thin Film Gas Diffusion Barriers; 6.6 Encapsulation of Organic Electronics; 6.7 Conclusions; Acknowledgments; References; Chapter 7: Plasma Atomic Layer Deposition; 7.1 Introduction; 7.2 Plasma Basics; 7.3 Plasma ALD Configurations; 7.4 Merits of Plasma ALD; 7.5 Challenges for Plasma ALD; 7.6 Concluding Remarks and Outlook; Acknowledgments; References; Part Two: Nanostructures by ALD 327 $aChapter 8: Atomic Layer Deposition for Microelectronic Applications8.1 Introduction; 8.2 ALD Layers for Memory Devices; 8.3 ALD for Logic Devices; 8.4 Concluding Remarks; Acknowledgments; References; Chapter 9: Nanopatterning by Area-Selective Atomic Layer Deposition; 9.1 Concept of Area-Selective Atomic Layer Deposition; 9.2 Change of Surface Properties; 9.3 Patterning; 9.4 Applications of AS-ALD; 9.5 Current Challenges; Acknowledgment; References; Chapter 10: Coatings on High Aspect Ratio Structures; 10.1 Introduction; 10.2 Models and Analysis 327 $a10.3 Characterization Methods for ALD Coatings in High Aspect Ratio Structures 330 $aAtomic layer deposition, formerly called atomic layer epitaxy, was developed in the 1970s to meet the needs of producing high-quality, large-area fl at displays with perfect structure and process controllability. Nowadays, creating nanomaterials and producing nanostructures with structural perfection is an important goal for many applications in nanotechnology. As ALD is one of the important techniques which offers good control over the surface structures created, it is more and more in the focus of scientists. The book is structured in such a way to fi t both the need of the expert reader (du 606 $aAtomic layer deposition 608 $aElectronic books. 615 0$aAtomic layer deposition. 676 $a621.31 676 $a621.31/2429 676 $a621.38152 702 $aPinna$b Nicola 702 $aKnez$b Mato 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910130957403321 996 $aAtomic layer deposition of nanostructured materials$91984538 997 $aUNINA