LEADER 00961nam2-2200325---450- 001 990009456350403321 005 20111019133242.0 035 $a000945635 035 $aFED01000945635 035 $a(Aleph)000945635FED01 035 $a000945635 100 $a20111018d1968----km-y0itay50------ba 101 0 $aita 102 $aIT 105 $a--------001by 200 1 $a<<10.: >>Merope$etesto definitivo e redazioni inedite$fVittorio Alfieri$ga cura di Angelo Fabrizi 210 $aAsti$cCasa d'Alfieri$d1968 215 $aXVIII, 198 p.$d25 cm 225 1 $aOpere di Vittorio Alfieri da Asti$v19 461 0$1001000945615$12001$aTragedie$v10 676 $a852.6 700 1$aAlfieri,$bVittorio$f<1749-1803>$0292812 702 1$aFabrizi,$bAngelo 801 0$aIT$bUNINA$gRICA$2UNIMARC 901 $aBK 912 $a990009456350403321 952 $a852.6 ALFI 7(3;10)$bBibl.41513$fFLFBC 959 $aFLFBC 996 $aMerope$9149496 997 $aUNINA LEADER 01460nam 2200409I 450 001 9910706902403321 005 20190228144359.0 035 $a(CKB)5470000002460459 035 $a(OCoLC)1088728495 035 $a(EXLCZ)995470000002460459 100 $a20190228j201712 ua 0 101 0 $aeng 135 $aur||||||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aDevelopment of a photoelectrochemical etch process to enable heterogeneous substrate integration of epitaxial III-nitride semiconductors /$fVijay Parameshwaran [and six others] 210 1$aAdelphi, MD :$cUS Army Research Laboratory,$dDecember 2017. 215 $a1 online resource (vi, 10 pages) $cillustrations 300 $a"ARL-TR-8228." 300 $a"Dec 2017." 300 $aIncludes tables. 320 $aIncludes bibliographical references (page 8). 606 $aPhotoelectrochemistry 606 $aNitrides 606 $aInhomogeneous materials 615 0$aPhotoelectrochemistry. 615 0$aNitrides. 615 0$aInhomogeneous materials. 700 $aParameshwaran$b Vijay$01408090 712 02$aU.S. Army Research Laboratory, 801 0$bGPO 801 1$bGPO 906 $aBOOK 912 $a9910706902403321 996 $aDevelopment of a photoelectrochemical etch process to enable heterogeneous substrate integration of epitaxial III-nitride semiconductors$93491154 997 $aUNINA