LEADER 03857nam 2201081z- 450 001 9910595076903321 005 20230220 035 $a(CKB)5680000000080757 035 $a(oapen)https://directory.doabooks.org/handle/20.500.12854/92043 035 $a(oapen)doab97408 035 $a(EXLCZ)995680000000080757 100 $a20202209d2022 |y 0 101 0 $aeng 135 $aurmn|---annan 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 00$aSilicon Nanodevices 210 $aBasel$cMDPI - Multidisciplinary Digital Publishing Institute$d2022 215 $a1 online resource (238 p.) 311 08$a3-0365-4677-4 311 08$a3-0365-4678-2 330 $aThis book is a collection of scientific articles which brings research in Si nanodevices, device processing, and materials. The content is oriented to optoelectronics with a core in electronics and photonics. The issue of current technology developments in the nanodevices towards 3D integration and an emerging of the electronics and photonics as an ultimate goal in nanotechnology in the future is presented. The book contains a few review articles to update the knowledge in Si-based devices and followed by processing of advanced nano-scale transistors. Furthermore, material growth and manufacturing of several types of devices are presented. The subjects are carefully chosen to critically cover the scientific issues for scientists and doctoral students. 606 $aTechnology: general issues$2bicssc 610 $aanode 610 $aanti-phase boundaries (APBs) 610 $aarsenate 610 $aarsenite 610 $aatomic layer etching (ALE) 610 $aband-to-band tunneling 610 $acharge-trap synaptic transistor 610 $aCVD 610 $adark current 610 $adetectors 610 $adigital etch 610 $adoping effect 610 $adual-selective wet etching 610 $aepitaxial grown 610 $aepitaxial growth 610 $aFin etching 610 $aFinFET 610 $agermanium 610 $aGeSn 610 $aGOI 610 $aheteroepitaxy 610 $aHfO2/Si0.7Ge0.3 gate stack 610 $aHNO3 concentration 610 $aIII-V on Si 610 $ain-plane nanowire 610 $ainterface state density 610 $alasers 610 $alithium-ion batteries 610 $along-term potentiation (LTP) 610 $an/a 610 $ananowire-based quantum devices 610 $aneural network 610 $aneuromorphic system 610 $aorganotrialkoxysilane 610 $aozone oxidation 610 $ap+-Ge0.8Si0.2/Ge stack 610 $apassivation 610 $apattern recognition 610 $aphotodetectors 610 $aprussian blue nanoparticles 610 $aquantum computing 610 $aquantum dot 610 $aquasi-atomic-layer etching (q-ALE) 610 $aresponsivity 610 $aselective epitaxial growth (SEG) 610 $aselective wet etching 610 $ashort-term potentiation (STP) 610 $aSi-cap 610 $aSi-MOS 610 $asilica beads 610 $asilicon 610 $asite-controlled 610 $aspin qubits 610 $astacked SiGe/Si 610 $athreading dislocation densities (TDDs) 610 $atransistors 610 $avertical gate-all-around (vGAA) 610 $avertical Gate-all-around (vGAA) 610 $awater decontamination 610 $ayolk?shell structure 615 7$aTechnology: general issues 700 $aRadamson$b Henry$4edt$01236601 702 $aWang$b Guilei$4edt 702 $aRadamson$b Henry$4oth 702 $aWang$b Guilei$4oth 906 $aBOOK 912 $a9910595076903321 996 $aSilicon Nanodevices$93033980 997 $aUNINA LEADER 00905nam0-22003251i-450 001 990007949760403321 005 20250924113131.0 010 $a0-19-507993-0 035 $a000794976 035 $aFED01000794976 035 $a(Aleph)000794976FED01 035 $a000794976 100 $a20041115d1996----km-y0itay50------ba 101 0 $aeng 102 $aGB 105 $aa-------001yy 200 1 $a<>world's writing systems$fedited by Peter T. Daniels and William Bright 210 $aNew York ; Oxford$cOxford University press$d1996 215 $aXLV, 922 p.$cill.$d25 cm 610 0 $aScrittura 676 $a411 702 1$aDaniels,$bPeter T. 702 1$aBright,$bWilliam$f<1928- > 801 0$aIT$bUNINA$gRICA$2UNIMARC 901 $aBK 912 $a990007949760403321 952 $aCIRASS 197$fCIRAS 959 $aCIRAS 996 $aWorld's writing systems$9746919 997 $aUNINA