LEADER 00876nam0-22003131i-450-
001 990004161710403321
005 20080318105549.0
010   $a0-674-26552-1
035   $a000416171
035   $aFED01000416171
035   $a(Aleph)000416171FED01
035   $a000416171
100   $a19990604d1987----km-y0itay50------ba
101 0 $aeng
102   $aGB
105   $ay-------00-c-
200 1 $aEssays, comments and reviews$fWilliam James
210   $aCambridge$cHarvard University Press$d1987
215   $aXL, 784 p.$d23 cm
225 1 $a<<The >>works of William James
610 0 $aPSICOLOGIA. LETTURE
700  1$aJames,$bWilliam$047983
801  0$aIT$bUNINA$gRICA$2UNIMARC
901   $aBK
912   $a990004161710403321
952   $aP.1 PSI 183 (2)$bBIBL.13201$fFLFBC
959   $aFLFBC
996   $aEssays, comments and reviews$9475431
997   $aUNINA

LEADER 01460nam  2200409I  450 
001 9910706902403321
005 20190228144359.0
035   $a(CKB)5470000002460459
035   $a(OCoLC)1088728495
035   $a(EXLCZ)995470000002460459
100   $a20190228j201712    ua             0
101 0 $aeng
135   $aur|||||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aDevelopment of a photoelectrochemical etch process to enable heterogeneous substrate integration of epitaxial III-nitride semiconductors /$fVijay Parameshwaran [and six others]
210  1$aAdelphi, MD :$cUS Army Research Laboratory,$dDecember 2017.
215   $a1 online resource (vi, 10 pages) $cillustrations
300   $a"ARL-TR-8228."
300   $a"Dec 2017."
300   $aIncludes tables.
320   $aIncludes bibliographical references (page 8).
606   $aPhotoelectrochemistry
606   $aNitrides
606   $aInhomogeneous materials
615  0$aPhotoelectrochemistry.
615  0$aNitrides.
615  0$aInhomogeneous materials.
700   $aParameshwaran$b Vijay$01408090
712 02$aU.S. Army Research Laboratory,
801  0$bGPO
801  1$bGPO
906   $aBOOK
912   $a9910706902403321
996   $aDevelopment of a photoelectrochemical etch process to enable heterogeneous substrate integration of epitaxial III-nitride semiconductors$93491154
997   $aUNINA