LEADER 01168cam0-22003611i-450- 001 990005531220403321 005 20130311113505.0 035 $a000553122 035 $aFED01000553122 035 $a(Aleph)000553122FED01 035 $a000553122 100 $a19990604d1968----km-y0itay50------ba 101 0 $aita 102 $aIT 105 $ay-------001yy 200 1 $aProblemi di diritto familiare nell'età dei comuni$ebeni paterni e "pars filii"$fManlio Bellomo 210 $aMilano$cA. Giuffrè$d1968 215 $a258 p.$d25 cm 225 1 $aPubblicazioni dell'Istituto di scienze giuridiche, economiche, politiche e sociali della Università di Messina$v69 610 0 $aDiritto di famiglia$aMedioevo 676 $a346.45015$v19$zita 700 1$aBellomo,$bManlio$f<1933- >$0198940 801 0$aIT$bUNINA$gREICAT$2UNIMARC 901 $aBK 912 $a990005531220403321 952 $aUNIV. 27 (69)$b86562$fFGBC 952 $a346.45 BEL 1$bST.MED.MOD. 5546$fFLFBC 952 $aSDI-D 139$b1940$fSDI 959 $aFLFBC 959 $aSDI 959 $aFGBC 996 $aProblemi di diritto familiare nell'età dei comuni$9610550 997 $aUNINA LEADER 00964nam0-22003131i-450- 001 990001065040403321 005 20080226135337.0 035 $a000106504 035 $aFED01000106504 035 $a(Aleph)000106504FED01 035 $a000106504 100 $a20001205d1957----km-y0itay50------ba 101 0 $aeng 102 $aUS 105 $ay-------001yy 200 1 $aElectric circuits$ea first course in circuit analysis for electrical engineers$fby members of the staff of the Department of Electrical Engineering 210 $aNew York$cJohn Wiley$d1957 300 $a11th printing 610 0 $aElettronica generale 610 0 $aCircuiti 676 $a537.5 710 02$aMassachusetts Institute of Technology.$bDepartment of Electrical Engineering$0297373 801 0$aIT$bUNINA$gRICA$2UNIMARC 901 $aBK 912 $a990001065040403321 952 $a31-030$b2101$fFI1 959 $aFI1 996 $aElectric circuits$9335040 997 $aUNINA LEADER 01559oam 2200469 450 001 9910715121503321 005 20201229140802.0 035 $a(CKB)5470000002508802 035 $a(OCoLC)1139565353 035 $a(EXLCZ)995470000002508802 100 $a20200206d1931 ua 0 101 0 $aeng 135 $aurbn||||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aSome characteristics of fuel sprays at low-injection pressures /$fby A.M. Rothrock and C.D. Waldron 210 1$aWashington, [D.C.] :$cNational Advisory Committee for Aeronautics,$d1931. 215 $a1 online resource (6 pages, 9 unnumbered pages) $cillustrations 225 1 $aTechnical note / National Advisory Committee for Aeronautics ;$vNo. 399 300 $a"November, 1931." 300 $aNo Federal Depository Library Program (FDLP) item number. 320 $aIncludes bibliographical references (page 6). 606 $aFuel 606 $aAerosols 606 $aNozzles 606 $aInjectors 615 0$aFuel. 615 0$aAerosols. 615 0$aNozzles. 615 0$aInjectors. 700 $aRothrock$b A. M$g(Addison May),$f1903-1971,$01398048 702 $aWaldron$b C. D. 712 02$aUnited States.$bNational Advisory Committee for Aeronautics, 801 0$bTRAAL 801 1$bTRAAL 801 2$bOCLCO 801 2$bGPO 906 $aBOOK 912 $a9910715121503321 996 $aSome characteristics of fuel sprays at low-injection pressures$93529279 997 $aUNINA LEADER 10093oam 2200553 450 001 9910830138003321 005 20240219173005.0 010 $a1-119-56222-8 010 $a1-119-56226-0 010 $a1-119-56228-7 024 7 $a10.1002/9781119562269 035 $a(CKB)4100000011659156 035 $a(MiAaPQ)EBC6424573 035 $a(CaBNVSL)mat09295051 035 $a(IDAMS)0b0000648d5cf5c7 035 $a(IEEE)9295051 035 $a(EXLCZ)994100000011659156 100 $a20210602d2021 uy 0 101 0 $aeng 135 $aur|n||||||||| 181 $2rdacontent 182 $2isbdmedia 183 $2rdacarrier 200 10$aMagnetic memory technology $espin-transfer-torque MRAM and beyond /$fDenny D. Tang, Chi-Feng Pai 210 1$aHoboken, New Jersey :$cWiley-IEEE Press,$d[2021] 210 4$d©2021 215 $a1 PDF 311 $a1-119-56223-6 320 $aIncludes bibliographical references and index. 327 $a1. Basic electromagnetism (25 pages) -- 1.1 Introduction -- 1.2 Magnetic force, pole, field, dipole -- 1.3 Magnetic dipole moment, torque and energy -- 1.4 Magnetic flux and magnetic induction -- 1.5 Ampere's circuital law, Biot-Savart law and magnetic field from magnetic material -- 1.5.1 Ampere's Law -- 1.5.2 Biot=Savart's Law -- 1.5.3 Magnetic field from magnetic material -- 1.6 Equations, cgs-SI unit conversion tables -- -- 2 Magnetism and magnetic materials (51 pages) -- 2.1 Introduction -- 2.2 Origin of magnetization -- 2.2.1 From Ampe?re to Einstein -- 2.2.2 Precession -- 2.2.3 Electron spin -- 2.2.4 Spin-orbit interaction -- 2.2.5 Hund's rules -- 2.3 Classification of magnetisms -- 2.3.1 Diamagnetism -- 2.3.2 Paramagnetism -- 2.3.3 Ferromagnetism -- 2.3.4 Antiferromagnetism -- 2.3.5 Ferrimagnetism -- 2.4 Exchange interactions -- 2.4.1 Direct exchange -- 2.4.2 Indirect exchange: Superexchange -- 2.4.3 Indirect exchange: RKKY interaction -- 2.5 Magnetization in magnetic metals and oxides -- 2.5.1 Slater-Pauling curve -- 2.5.2 Rigid band model -- 2.5.3 Iron oxides and iron garnets -- 2.6 Phenomenology of magnetic anisotropy -- 2.6.1 Uniaxial anisotropy -- 2.6.2 Cubic anisotropy -- 2.7 2Origins of magnetic anisotropy -- 2.7.1 Shape anisotropy -- 2.7.2 Magnetocrystalline anisotropy (MCA) -- 2.7.3 Perpendicular magnetic anisotropy (PMA) -- 2.8 Magnetic domain and domain walls -- 2.8.1 Domain wall -- 2.8.2 Single domain and superparamagnetism -- -- 3 Magnetic thin films -- 3.1 Introduction -- 3.2 Magnetic thin film growth -- 3.2.1 Sputter deposition -- 3.2.2 Molecular beam epitaxy (MBE) -- 3.3 Magnetic thin film characterization -- 3.3.1 Vibrating-sample magnetometer (VSM) -- 3.3.2 Magneto-optical Kerr effect (MOKE) -- -- 4 Magnetoresistance effects (14 pages) -- 4.1 Introduction -- 4.2 Anisotropic magnetoresistance (AMR) -- 4.3 Giant magnetoresistance (GMR) -- 4.4 Tunneling magnetoresistance (TMR) and magnetic tunnel junction (MTJ). 327 $a4.5 Contemporary MTJ designs and characterization -- -- 5 Magnetization switching and Field MRAMs (12 pages text + Figs) -- -- 5.1 Introduction -- 5.2 Magnetization reversible rotation and irreversible switching under external field -- 5.2.1 Full film and patterned device -- [homework] -- 5.2.2 Magnetization rotation and switching under a field in easy axis direction -- 5.2.3 Magnetization rotation and switching Under two orthogonal applied fields -- 5.2.4 Magnetization behavior of a Synthetic Anti-Ferromagnetic (SAF) stack -- 5.3 Field MRAMs -- 5.3.1 MTJ of Field MRAM -- 5.3.2 Half select bit disturbance issue -- 5.4 Applications -- references -- -- 6 Spin current and spin dynamics (17 pages) -- 6.1 Introduction to Hall effects -- 6.1.1 Ordinary Hall effect -- 6.1.2 Anomalous Hall effect and spin Hall effect -- 6.2 Spin current -- 6.2.1 Electro spin polarization in NM/FM/NM film stack -- 6.2.2 Non-local spin valve: Spin current injection, diffusion and inverse spin Hall effect -- 6.2.3 Generalized carrier and spin current draft-diffusion equation -- 6.3 Spin dynamics -- 6.3.1 Landau-Lifshitz and Landau-Lifshitz-Gilbert dynamics equation of motion -- 6.3.2 Ferromagnetic resonance -- 6.3.3 Spin pumping and effective damping in FM/NM film stack -- 6.3.4 FM/NM/FM coupling through spin current -- 6.4 Interaction between polarized conduction electron and local magnetization -- 6.4.1 Electron spin torque transfer to local magnetization -- 6.4.2 Macrospin model -- 6.4.3 Spin torque transfer in spin valve -- 6.4.3.1 Switching threshold current density -- 6.4.3.2 Switching time -- 6.4.4 Spin-torque transfer in magnetic tunnel junction -- 6.4.5 Spin-torque ferromagnetic resonance and torkance -- 6.5 Spin current interaction with domain wall -- 6.5.1 LLG description of domain wall motion under spin current -- 6.5.2 Threshold current density -- -- 7 Spin-torque-transfer (STT) MRAM engineering (46 pages) -- 7.1 Introduction. 327 $a7.2 Thermal stability energy and switching energy -- 7.3 STT switching properties -- 7.3.1 Switching probability and wrote error rate (WER) -- 7.3.2 Switching current in precession regime -- 7.3.3 Switching delay o a STT-MRAM cell -- 7.3.4 Read disturb rate -- 7.3.5 Switching under a magnetic field - phase diagram -- 7.3.6 MTJ switching abnormality -- 7.3.6.1 Magnetic back hopping -- 7.3.6.2 Bifurcation switching (Ballooning in WER) -- 7.3.6.3 Domain mediated magnetic reversal -- 7.4 The integrity of MTJ tunnel barrier -- 7.4.1 Write current stress -- 7.4.2 MgO degradation model -- 7.5 Data retention -- 7.5.1 Energy barrier extraction based on bit switching probability -- 7.5.2 Energy barrier extraction based on aiding field -- 7.5.3 Energy barrier extraction with retention bake at chip level -- 7.5.4 Data retention at chip level -- 7.6 The cell design consideration and scaling -- 7.6.1 MRAM bit cell and array -- 7.6.2 CMOS options -- 7.6.3 Cell switching efficiency -- 7.6.4 The cell design considerations -- 7.6.4.1 Write current and cell size -- 7.6.4.2 Read access performance -- 7.6.4.3 READ and WRITE margin -- 7.6.4.4 Stray field control for perpendicular MTJ -- 7.6.4.5 Suppression of stochastic switching time variation ideas -- 7.6.5 The scaling of MTJ for memory -- 7.6.5.1 In-plane MTJ -- 7.6.5.2 Out-of-plane (perpendicular) MTJ -- 7.7 MRAM cell SPICE model -- 7.7.1 Introduction -- 7.7.2 MTJ SPICE model embedded with Macrospin calculator -- 7.8 Test chip and chip level weak bit screening methodology -- 7.8.1 READ margin bits -- 7.8.2 WRITE margin bits -- 7.8.3 Weak retention bits -- 7.8.4 Low endurance bits -- -- 8 Advanced switching MRAM modes -- -- 8.1 Introduction -- 8.2 Current Induced-Domain-wall-motion (CIDM) memory -- 8.2.1 Single-bit cell -- 8.2.2 Multi-bit cell: Racetrack -- 8.3 Spin-orbit Torque (SOT) Memory -- 8.3.1 Introduction -- 8.3.2 Spin-orbit-Torque (SOT) MRAM cells -- 8.3.2.1 In-plane SOT cell. 327 $a in-plane SOT cell structure and switching behavior -- Device engineering and Cell scaling -- 8.3.2.2 Perpendicular SOT Cell -- 8.3.3 Materials choice for SOT-MRAM cell -- 8.3.3.1 Transition metals and their alloys -- 8.3.3.2 Emergent materials systems -- 8.3.3.3 Benchmarking of SOT switching efficiency -- 8.4 Magneto-electric effects and voltage-control magnetic anisotropy (VCMA) MRAM -- 8.4.1 Magneto-electric effects -- 8.4.2 VCMA-assisted MRAMS -- 8.4.2.1 VCMA-assisted Field-MRAM -- 8.4.2.2 VCMA-assisted multi-bit-word SOT-MRAM -- 8.4.2.3 VCMA-assisted Precession-toggle MRAM -- 8.5 Relative Merit of advanced switching mode MRAMs -- -- 9 MRAM applications, market position and production (31 pages) -- 9.1 Introduction -- 9.2 Intrinsic properties and product attributes of emerging non-volatile memories -- 9.2.1 Intrinsic properties -- 9.2.2 Product attributes -- 9.3 Memory landscape and MRAM opportunity -- 9.3.1 MRAM as embedded memory in logic SoC chips -- MTJ process integration issue of embedded MRAM -- MRAM as embedded FLASH in micro-controller -- embedded MRAM cell size -- MRAM as cache memory in processor -- improvement of access latency -- 9.3.2 High-density discrete MRAM -- 9.3.2.1 Technology status -- 9.3.2.2 Ideal CMOS technology for high-density MRAM -- 9.3.3 Applications and market opportunity -- 9.3.3.1 Battery-back memory applications -- 9.3.3.2 Internet -of-things (IoT), Cybersecurity applications -- 9.3.3.3 Applications to in-memory computing, artificial intelligence (AI) -- 9.3.3.4 MRAM based Memory-driven computing -- 9.4 MRAM production -- 9.4.1 MRAM product ecosystem -- 9.4.2 MRAM production history -- 9.4.2.1 1st generation MRAM - Field MRAM -- 9.4.2.2 2nd generation MRAM - STT MRAM -- 9.4.2.3 Potential 3rd generation MRAM -SOT MRAM -- Appendix -- A. Retention bake (include two-way flip) (1 pages) -- B. Memory Functionality-based scaling (10 pages) -- C. High-bandwidth MRAM architecture (6 pages). 330 $a"This book first provides the basics of magnetism that electrical engineering students in the semiconductor curriculum can easily understand. Then, it goes one step forward to discuss electron spin. Following the above background discussion, readers are taught the physics of magnetic tunnel junction device (MTJ), the work horse of MRAM, for memory applications. At the end of this book, the author gives a comparison of emerging non-volatile memories (PCM, ReRAM, FeRAM and MRAM). The author also explores MRAM's unique quality among emerging memories, in that is the only one in which the atoms in the device do not move when switching states. This property makes it the most reliable and low power"--$cProvided by publisher. 606 $aMagnetic memory (Computers) 606 $aNonvolatile random-access memory 615 0$aMagnetic memory (Computers) 615 0$aNonvolatile random-access memory. 676 $a621.3973 700 $aTang$b Denny D.$01689696 702 $aPai$b Chi-Feng 712 02$aJohn Wiley & Sons, Inc., 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bUtOrBLW 906 $aBOOK 912 $a9910830138003321 996 $aMagnetic memory technology$94064944 997 $aUNINA