LEADER 00843nam0-22003011i-450- 001 990000458180403321 005 20081007130238.0 010 $a88-7056-442-8 035 $a000045818 035 $aFED01000045818 035 $a(Aleph)000045818FED01 035 $a000045818 100 $a20020821d1986----km-y0itay50------ba 101 1 $aita$ceng 105 $aa-------001yy 200 1 $aMapping PC IBM$egestione della memoria e metodi di indirizzamento$fRuss Davies 210 $aMilano$cJackson$dİ1986 215 $a232 p.$cill.$d24 cm 225 1 $aElettronica, Informatica, Nuove tecnologie$v335 610 0 $aElaboratori$aIBM 676 $a005 700 1$aDavies,$bRuss 801 0$aIT$bUNINA$gRICA$2UNIMARC 901 $aBK 912 $a990000458180403321 952 $a10 C 305$b863 DIS$fDINEL 959 $aDINEL 997 $aUNINA LEADER 00848nam0-22003131i-450- 001 990000850340403321 005 20001010 010 $a0-12-220950-8 035 $a000085034 035 $aFED01000085034 035 $a(Aleph)000085034FED01 035 $a000085034 100 $a20001010d--------km-y0itay50------ba 101 0 $aita 105 $ay-------001yy 200 1 $aSpectral theory of linear operators$fH. R. Dowson 210 $aLondon$cAcademic Press$d1978 215 $aXII, 422 p.$d23 cm 225 1 $aLondon Mathematical Society$v12 676 $a515.724 700 1$aDowson,$bH.R.$041928 801 0$aIT$bUNINA$gRICA$2UNIMARC 901 $aBK 912 $a990000850340403321 952 $a02 26 D 34$b2949$fFINBN 959 $aFINBN 996 $aSpectral theory of linear operators$9191473 997 $aUNINA DB $aING01 LEADER 03009nam 22005895 450 001 9910988290503321 005 20250321115237.0 010 $a981-9782-65-1 024 7 $a10.1007/978-981-97-8265-9 035 $a(CKB)38012286100041 035 $a(DE-He213)978-981-97-8265-9 035 $a(MiAaPQ)EBC31973338 035 $a(Au-PeEL)EBL31973338 035 $a(OCoLC)1511134128 035 $a(EXLCZ)9938012286100041 100 $a20250321d2025 u| 0 101 0 $aeng 135 $aur||||||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aGrowth and Application of AlN Single Crystal /$fby Ke Xu, Jun Huang 205 $a1st ed. 2025. 210 1$aSingapore :$cSpringer Nature Singapore :$cImprint: Springer,$d2025. 215 $a1 online resource (X, 177 p. 167 illus., 122 illus. in color.) 225 1 $aWide Bandgap Semiconductors,$x2948-2615 311 08$a981-9782-64-3 327 $aBasic Properties of Ain Single Crystal -- Physical Basis for the Growth of Ain Single Crystal -- Defects in Ain Single Crystal -- Growth of Ain Bulk Crystal by Physical Vapor Transport -- Growth of Thick Ain Layers by Hydride Vapor Phase Epitaxy -- Growth of Thin Ain Layers by Metal Organic Chemical Vapor Deposition -- Aluminium Nitride based Semiconductor Devices. 330 $aThis book covers the rapidly developing field of AlN research and some of its technical applications. In this book, the development of aluminium nitride from single crystal growth to device applications is comprehensively presented. Single crystal AlN growth includes bulk single crystal growth, single crystal thick film growth and single crystal thin film growth involving physical vapor deposition technology, hydride vapor phase epitaxy and metal-organic chemical vapor deposition technology. In terms of devices, AlN basic UV LED and power electronics devices are discussed. This book can provide researchers, engineers and graduate students with a wealth of new discoveries, results, information and knowledge in the field of AlN single crystal materials. 410 0$aWide Bandgap Semiconductors,$x2948-2615 606 $aSolid state physics 606 $aSemiconductors 606 $aElectronics 606 $aElectronic Devices 606 $aSemiconductors 606 $aElectronics and Microelectronics, Instrumentation 615 0$aSolid state physics. 615 0$aSemiconductors. 615 0$aElectronics. 615 14$aElectronic Devices. 615 24$aSemiconductors. 615 24$aElectronics and Microelectronics, Instrumentation. 676 $a530.41 700 $aXu$b Ke$4aut$4http://id.loc.gov/vocabulary/relators/aut$0654492 702 $aHuang$b Jun$4aut$4http://id.loc.gov/vocabulary/relators/aut 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910988290503321 996 $aGrowth and Application of AlN Single Crystal$94348554 997 $aUNINA