LEADER 01516nam2 2200385 i 450 001 LO10343467 005 20231121125518.0 010 $a8842044784 020 $aIT$b94-8660 100 $a20030627d1994 ||||0itac50 ba 101 | $aita 102 $ait 181 1$6z01$ai $bxxxe 182 1$6z01$an 200 0 $a1$fRichard Rorty$ga cura di Aldo G. Gargani 210 $aRoma \etc.!$cLaterza$d1994 215 $aXXVIII, 309 p.$d21 cm 225 | $aSagittari Laterza$v81 300 $aTrad. di Massimo Marraffa. 410 0$1001CFI0014078$12001 $aSagittari Laterza$v81 461 1$1001RAV0226707$12001 $aScritti filosofici$fRichard Rorty$v1 606 $aFilosofia$xSec. 20.$2FIR$3RMLC068468$9N 676 $a190.904$9$v21 702 1$aGargani$b, Aldo Giorgio$3CFIV002307 790 1$aGargani$b, Aldo$3CFIV035272$zGargani, Aldo Giorgio 790 1$aGargani$b, Aldo G.$3SBNV017128$zGargani, Aldo Giorgio 801 3$aIT$bIT-01$c20030627 850 $aIT-FR0084 $aIT-FR0017 899 $aBiblioteca Del Monumento Nazionale Di Montecassino$bFR0084 899 $aBiblioteca umanistica Giorgio Aprea$bFR0017 $eN 912 $aLO10343467 950 2$aBiblioteca umanistica Giorgio Aprea$d 52MAG 14/563$e 52FSS0000053155 VMB RS $fA $h20220407$i20220407$d 52MAG 14/563*$e 52FSS0000039565 VMB RS $fA $h20220407$i20220407 977 $a 25$a 52 996 $a1$961339 997 $aUNICAS LEADER 05123nam 22006731 450 001 9910788937003321 005 20230803033122.0 010 $a1-4619-5140-2 010 $a1-4384-4819-8 035 $a(CKB)3710000000057032 035 $a(EBL)3408786 035 $a(SSID)ssj0001055096 035 $a(PQKBManifestationID)11537827 035 $a(PQKBTitleCode)TC0001055096 035 $a(PQKBWorkID)11007018 035 $a(PQKB)11068694 035 $a(MiAaPQ)EBC3408786 035 $a(OCoLC)864552172 035 $a(MdBmJHUP)muse27223 035 $a(Au-PeEL)EBL3408786 035 $a(CaPaEBR)ebr10792209 035 $a(OCoLC)862780823 035 $a(EXLCZ)993710000000057032 100 $a20130301d2013 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aBeyond oneness and difference $eLi and coherence in Chinese Buddhist thought and its antecedents /$fBrook Ziporyn 210 1$aAlbany :$cState University of New York Press,$d2013. 215 $a1 online resource (432 p.) 225 0$aSUNY series in Chinese philosophy and culture 300 $aDescription based upon print version of record. 311 $a1-4384-4817-1 320 $aIncludes bibliographical references and index. 327 $a""Contents ""; ""Acknowledgments ""; ""Introduction: Li c??? and Coherence: Recap of Ironies of Oneness and Difference and Terminological Clarifications""; ""Chapter One: Li c??? as a Fundamental Category in Chinese Thought""; ""Needham and Organic Pattern ""; ""Hansen and the Mass Noun Hypothesis ""; ""Graham and the Absent Copula and Correlative Thinking ""; ""Peterson and Coherence "" 327 $a""Hall and Ames and the Focus/Field """"Chapter Two: The Advent of Li Ironic and Non-Ironic""; ""Li as a???Greatest Coherencea??? in the Xunzi ""; ""a???Heavenly Principlea??? (a??©c??? tianli) Ironic and Non-Ironic in the a???Inner Chaptersa??? of the Zhuangzi and a???The Record of Musica???""; ""Li in the a???Wingsa??? to the Zhouyi ""; ""Li and Centrality in Dong Zhongshu (179a???104 BCE) "" 327 $a""Chapter Three: The Development of Li in Ironic Texts """"Li and Non-Ironic Coherence in the Later Parts of the Zhuangzi: Integrating the Non-Ironic ""; ""First Type: Li and Dao Both Non-Ironic ""; ""Second Type: Dao Ironic, Li Nona???Ironic""; ""Third Type: Dao and Li Both Ironic ""; ""Integrating Types Two and Three "" 327 $a""Chapter Four: The Advent of Li as a Technical Philosophical Term """"Toward the Ironic: Li in the Pre-Ironic Daoism of the Guanzi ""; ""Li Defined: The Later Two-and-a-half Chapters of the Guanzi ""; ""The Hanfeizi Commentary on the Laozi: Li as Division and the Yielding Dao "" 327 $a""Cosmological Dao and Its Li in the Huainanzi """"Chapter Five: Li as the Convergence of Coherence and Incoherence in Wang Bi and Guo Xiang ""; ""Subjective Perspectivism in Wang Bi: The Advent of Ti and Yong c??? as Ironic Structure""; ""Applications of the Multiplicity of Li in Wanga???s Laozi Commentary "" 327 $a""Convergence of Coherence and Incoherence in Guo Xiang: Li as a???Just the Way It Is"" as Limit, and as Vanishing Convergence"" 330 $a"Continues the author's discussion of the development of the Chinese philosophical concept Li, concluding in Song and Ming dynasty Neo-Confucianism"--Provided by publisher. 410 0$aSUNY Series in Chinese Philosophy and Culture 606 $aLi 606 $aPhilosophy, Chinese 606 $aTruth$xCoherence theory 615 0$aLi. 615 0$aPhilosophy, Chinese. 615 0$aTruth$xCoherence theory. 676 $a181/.112 700 $aZiporyn$b Brook$f1964-$01473075 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910788937003321 996 $aBeyond oneness and difference$93686129 997 $aUNINA LEADER 01194nam2 22002891i 450 001 UON00043280 005 20231205102155.533 100 $a20020107d1964 |0itac50 ba 101 $ager 102 $aAT 105 $a|||| 1|||| 200 1 $aInschriften aus Riyam$fJ.M. Solà Solé 210 $aWien$cHermann Bohlaus$d1964 - 60 p.$d16 p. di tav. ; 22 c 300 $aVorgelegt in der sitzung am 10. marz 1963 461 1$1001UON00043274$12001 $aSammlung Eduard Glaser$1210 $aWien$cAlfred Holder, Hermann Bohlaus$d1913-$1215 $av.$d22 cm$v4 606 $aEPIGRAFIA SUDARABICA$xRIYAM$3UONC014863$2FI 620 $aAT$dWien$3UONL003140 686 $aSAE I$cSUDARABICO ED ETIOPICO - GENERALI$2A 700 1$aSOLA-SOLE$bJosep M.$3UONV027407$0395874 702 1$aGLASER$bEduard$3UONV027403 712 $aHölder$3UONV251186$4650 801 $aIT$bSOL$c20240220$gRICA 899 $aSIBA - SISTEMA BIBLIOTECARIO DI ATENEO$2UONSI 912 $aUON00043280 950 $aSIBA - SISTEMA BIBLIOTECARIO DI ATENEO$dSI SAE I 002 (5) $eSI SEM786 7 002 (5) 996 $aInschriften aus Riyam$91208454 997 $aUNIOR LEADER 04769nam 2200709 a 450 001 9911006806203321 005 20200520144314.0 010 $a1-107-21590-0 010 $a1-282-97823-3 010 $a9786612978234 010 $a0-511-93186-7 010 $a0-511-97385-3 010 $a0-511-92375-9 010 $a0-511-93322-3 010 $a0-511-92801-7 010 $a0-511-92548-4 010 $a0-511-93052-6 035 $a(CKB)2670000000068471 035 $a(EBL)605001 035 $a(OCoLC)700697483 035 $a(SSID)ssj0000471561 035 $a(PQKBManifestationID)11973351 035 $a(PQKBTitleCode)TC0000471561 035 $a(PQKBWorkID)10428563 035 $a(PQKB)10518346 035 $a(UkCbUP)CR9780511973857 035 $a(MiAaPQ)EBC605001 035 $a(PPN)26136426X 035 $a(EXLCZ)992670000000068471 100 $a20101207d2011 uy 0 101 0 $aeng 135 $aur||||||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aNanoscale MOS transistors $esemi-classical transport and applications /$fDavid Esseni, Pierpaolo Palestri, and Luca Selmi 210 $aCambridge ;$aNew York $cCambridge University Press$d2011 215 $a1 online resource (xvii, 470 pages) $cdigital, PDF file(s) 300 $aTitle from publisher's bibliographic system (viewed on 05 Oct 2015). 311 $a0-521-51684-6 320 $aIncludes bibliographical references and index. 327 $aMachine generated contents note: 1. Introduction; 2. Bulk semiconductors and the semi-classical model; 3. Quantum confined inversion layers; 4. Carrier scattering in silicon MOS transistors; 5. The Boltzmann transport equation; 6. The Monte Carlo method for the Boltzmann transport equation; 7. Simulation of bulk and SOI silicon MOSFETs; 8. MOS transistors with arbitrary crystal orientation; 9. MOS transistors with strained silicon channels; 10. MOS transistors with alternative materials; Appendix A. Mathematical definitions and properties; Appendix B. Integrals and transformations over a finite area A; Appendix C. Calculation of the equi-energy lines with the k-p model; Appendix D. Matrix elements beyond the envelope function approximation; Appendix E. Charge density produced by a perturbation potential. 330 $a"Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework Predictive capabilities of device models, discussed with systematic comparisons to experimental results"--$cProvided by publisher. 330 $a"The traditional geometrical scaling of the CMOS technologies has recently evolved in a generalized scaling scenario where material innovations for different intrinsic regions of MOS transistors as well as new device architectures are considered as the main routes toward further performance improvements. In this regard, high-? dielectrics are used to reduce the gate leakage with respect to the SiO2 for a given drive capacitance, while the on-current of the MOS transistors is improved by using strained silicon and possibly with the introduction of alternative channel materials. Moreover, the ultra-thin body Silicon-On-Insulator (SOI) device architecture shows an excellent scalability even with a very lightly doped silicon film, while non-planar FinFETs are also of particular interest, because they are a viable way to obtain double-gate SOI MOSFETs and to realize in the same fabrication process n-MOS and p-MOS devices with different crystal orientations"--$cProvided by publisher. 606 $aMetal oxide semiconductors$xDesign and construction 606 $aElectron transport 606 $aNanoelectronics 615 0$aMetal oxide semiconductors$xDesign and construction. 615 0$aElectron transport. 615 0$aNanoelectronics. 676 $a004.5/3 686 $aTEC008080$2bisacsh 700 $aEsseni$b D$g(David)$01824104 701 $aPalestri$b P$g(Pierpaolo)$01824105 701 $aSelmi$b L$g(Luca)$01824106 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9911006806203321 996 $aNanoscale MOS transistors$94391166 997 $aUNINA