LEADER 02495nam0 22005533i 450 001 VAN0228703 005 20230605105334.936 017 70$2N$a9783030519032 100 $a20211018d2020 |0itac50 ba 101 $aeng 102 $aCH 105 $a|||| ||||| 200 1 $aIII?V Compound Semiconductors and Devices$eAn Introduction to Fundamentals$fKeh Yung Cheng 210 $aCham$cSpringer$d2020 215 $axv, 537 p.$cill.$d24 cm 410 1$1001VAN0132770$12001 $aGraduate Texts in Physics$1210 $aBerlin [etc.]$cSpringer 500 1$3VAN0228706$aIII?V Compound Semiconductors and Devices : An Introduction to Fundamentals$91881536 606 $a82-XX$xStatistical mechanics, structure of matter [MSC 2020]$3VANC021931$2MF 606 $a78-XX$xOptics, electromagnetic theory [MSC 2020]$3VANC022356$2MF 606 $a00A79 (77-XX)$xPhysics [MSC 2020]$3VANC023182$2MF 610 $aCompound Semiconductor Materials$9KW:K 610 $aDevice Physics of Heterostructure Lasers$9KW:K 610 $aHeterostructure Band Diagrams$9KW:K 610 $aHigh-electron Mobility Transistor Basics$9KW:K 610 $aHigh-speed devices$9KW:K 610 $aLight-Emitting Transistors$9KW:K 610 $aLiquid Phase Epitaxy$9KW:K 610 $aMOSFETs$9KW:K 610 $aMolecular Beam Epitaxy$9KW:K 610 $aOptical Properties of Dielectric Medium$9KW:K 610 $aPhotonic Devices$9KW:K 610 $aStrained Layer Structures$9KW:K 610 $aSuperlattices and Minibands$9KW:K 610 $aTextbook Compound Semiconductors$9KW:K 610 $aThree-terminal Devices$9KW:K 610 $aTransistor Lasers$9KW:K 610 $aTwo-terminal Devices$9KW:K 610 $aVapor Phase Epitaxy$9KW:K 620 $aCH$dCham$3VANL001889 700 1$aCheng$bKeh-Yung N.$3VANV191358$0843122 712 $aSpringer $3VANV108073$4650 801 $aIT$bSOL$c20240614$gRICA 856 4 $uhttp://doi.org/10.1007/978-3-030-51903-2$zE-book ? Accesso al full-text attraverso riconoscimento IP di Ateneo, proxy e/o Shibboleth 899 $aBIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICA$1IT-CE0120$2VAN08 912 $fN 912 $aVAN0228703 950 $aBIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICA$d08CONS e-book 4251 $e08eMF4251 20211018 996 $aIII?V Compound Semiconductors and Devices : An Introduction to Fundamentals$91881536 997 $aUNICAMPANIA